Balanced Three-chip MicroCapacitance (MC) SIDACtor Device
http://www.littelfuse.com
2 - 36
2004 Littelfuse, Inc.
+1 972-580-7777
SIDACtor
Data Book and Design Guide
Balanced Three-chip MicroCapacitance (MC)
SIDACtor Device
The balanced three-chip TO-220 MC SIDACtor solid state device protects telecommunica-
tion equipment in high-speed applications that are sensitive to load values and that require
a lower capacitance. C
O
values for the MC are 40% lower than a standard AC part.
This MC SIDACtor series is used to enable equipment to meet various regulatory
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and
TIA-968-A (formerly known as FCC Part 68) without the need of series resistors.
* For surge ratings, see table below.
General Notes:
All measurements are made at an ambient temperature of 25 C. I
PP
applies to -40 C through +85 C temperature range.
I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
V
DRM
is measured at I
DRM.
V
S
is measured at 100 V/s.
Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
Off-state capacitance (C
O
) is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.
Device is designed to meet balance requirements of GTS 8700 and GR 974.
Electrical Parameters
Part
Number *
V
DRM
Volts
V
S
Volts
V
DRM
Volts
V
S
Volts
V
T
Volts
I
DRM
Amps
I
S
mAmps
I
T
Amps
I
H
mAmps
C
O
pF
Pins 1-2, 2-3
Pins 1-3
P1553AC MC
130
180
130
180
8
5
800
2.2
150
40
P1803AC MC
150
210
150
210
8
5
800
2.2
150
40
P2103AC MC
170
250
170
250
8
5
800
2.2
150
40
P2353AC MC
200
270
200
270
8
5
800
2.2
150
40
P2703AC MC
230
300
230
300
8
5
800
2.2
150
30
P3203AC MC
270
350
270
350
8
5
800
2.2
150
30
P3403AC MC
300
400
300
400
8
5
800
2.2
150
30
P5103AC MC
420
600
420
600
8
5
800
2.2
150
30
Surge Ratings
Series
I
PP
2x10 s
Amps
I
PP
8x20 s
Amps
I
PP
10x160 s
Amps
I
PP
10x560 s
Amps
I
PP
10x1000 s
Amps
I
TSM
60 Hz
Amps
di/dt
Amps/s
C
500
400
200
150
100
50
500
1
2
3
Balanced Three-chip MicroCapacitance (MC) SIDACtor Device
2004 Littelfuse, Inc.
2 - 37
http://www.littelfuse.com
SIDACtor
Data Book and Design Guide
+1 972-580-7777
D
a
ta
S
h
e
e
ts
Thermal Considerations
Package
Symbol
Parameter
Value
Unit
Modified
TO-220
T
J
Operating Junction Temperature Range
-40 to +150
C
T
S
Storage Temperature Range
-65 to +150
C
R
JA
Thermal Resistance: Junction to Ambient
50
C/W
PIN 1
PIN 2
PIN 3
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
V-I Characteristics
50
100
0
t
r
t
d
0
Peak
Value
Half Value
t Time (s)
I
PP
P
e
ak Pulse Current %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
Waveform = t
r
x t
d
t
r
x t
d
Pulse Wave-form
-8
-40 -20
0
20
40 60
80 100 120 140 160
-6
-4
0
2
4
6
8
10
12
14
Junction Temperature (T
J
) C
P
ercent of
V
S
Change %
25 C
Normalized V
S
Change versus Junction Temperature
0.4
-40 -20
0
20 40 60 80 100 120 140 160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Case Temperature (T
C
) C
Ratio of
I
H
I
H
(T
C
= 25 C)
25 C
Normalized DC Holding Current versus Case Temperature
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