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Электронный компонент: P6002AD

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High Surge Current SIDACtor Device
http://www.littelfuse.com
2 - 60
2004 Littelfuse, Inc.
+1 972-580-7777
SIDACtor
Data Book and Design Guide
High Surge Current SIDACtor Device
This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package.
It protects equipment located in the severe surge environment of Community Antenna TV
(CATV) applications.
This device can replace the gas tubes traditionally used for station protection because
SIDACtor devices have much tighter voltage tolerances.
* For surge ratings, see table below.
* For surge ratings, see table below.
General Notes:
All measurements are made at an ambient temperature of 25 C. I
PP
applies to -40 C through +85 C temperature range.
I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
V
DRM
is measured at I
DRM.
V
S
is measured at 100 V/s.
Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
Off-state capacitance (C
O
) is measured at 1 MHz with a 2 V bias and is a typical value.
Electrical Parameters
Part
Number *
V
DRM
Volts
V
S
Volts
V
T
Volts
I
DRM
Amps
I
S
mAmps
I
T
Amps
I
H
mAmps
C
O
pF
Pins 1-3
P6002AD
550
700
5.5
5
800
2.2
50
60
1
2
3
(T)
(R)
(G)
Electrical Parameters
Part
Number *
V
DRM
Volts
V
S
Volts
V
T
Volts
I
DRM
Amps
I
S
mAmps
I
T
Amps
I
H
mAmps
C
O
pF
Pins 1-3
P3100AD
280
360
5.5
5
800
2.2
120
115
Surge Ratings
Series
I
PP
8x20 s
Amps
I
PP
10x1000 s
Amps
I
TSM
60 Hz
Amps
di/dt
Amps/s
D
1000
250
120
500
High Surge Current SIDACtor Device
2004 Littelfuse, Inc.
2 - 61
http://www.littelfuse.com
SIDACtor
Data Book and Design Guide
+1 972-580-7777
D
a
ta
S
h
e
e
ts
Note: P6002AD is shown. P3100AD has no center lead.
Thermal Considerations
Package
Symbol
Parameter
Value
Unit
Modified
TO-220
T
J
Operating Junction Temperature Range
-40 to +150
C
T
S
Storage Temperature Range
-65 to +150
C
R
JA
Thermal Resistance: Junction to Ambient
60
C/W
PIN 1
PIN 2
PIN 3
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
V-I Characteristics
50
100
0
t
r
t
d
0
Peak
Value
Half Value
t Time (s)
I
PP
P
eak Pulse Current %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
Waveform = t
r
x t
d
t
r
x t
d
Pulse Wave-form
-8
-40 -20
0
20 40 60 80 100 120 140 160
-6
-4
0
2
4
6
8
10
12
14
Junction Temperature (T
J
) C
P
ercent of
V
S
Change %
25 C
Normalized V
S
Change versus Junction Temperature
0.4
-40 -20
0
20 40 60 80 100 120 140 160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Case Temperature (T
C
) C
Ratio of
I
H
I
H
(T
C
= 25 C)
25 C
Normalized DC Holding Current versus Case Temperature