LESHAN RADIO COMPANY, LTD.
S221/2
Band-switching diode
SOD523 SC-79
1
2
BA 892
2
ANODE
1
CATHODE
FEATURES
Small plastic SMD package
Low diode capacitance
Low diode forward resistance
Small inductance.
APPLICATIONS
Low loss band-switching in VHF television tuners
Surface mount band-switching circuits.
DESCRIPTION
Planar, high performance band-switch diode in a small SMD plastic
package (SOD523).
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
35
V
I
I
F
continuous forward current
100
mA
P
tot
total power dissipation
T
s
=9
0
C
715
mW
T
stg
storage temperature
-65
+150
C
T
j
junction temperature
-65
+150
C
ELECTRICAL CHARACTERISTICS T
j
= 25C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
=10 mA
1
V
I
R
reverse current
V
R
=30 V
20
nA
C
d
diode capacitance
f = 1 MHz; note 1;
V
R
= 1 V
0.92
1.4
pF
V
R
= 3 V
0.6
0.85
1.1
pF
r
D
diode forward resistance
f = 100 MHz; note 1;
I
F
= 3 mA
0.45
0.7
I
F
= 10 mA
0.36
0.5
L
S
series inductance
0.6
-
nH
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering-point
85
K/W
LESHAN RADIO COMPANY, LTD.
S222/2
BA 892
10
1
10
-1
0.1
1
10
I
F
(mA )
r
D
(
)
2
1.6
1.2
0.8
0.4
0
0
10
20
30
V
R
( V )
C
d
(pF)
f = 1 MHz; T
j
=25C
Fig.1 Diode capacitance as a function of reverse
voltage; typical values.
Fig.2 Diode forward resistance as a function of
forward current; typical values.
f = 100 MHz; T
j
=25C
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