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Электронный компонент: BAP51-02

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LESHAN RADIO COMPANY, LTD.
S241/2
General purpose PIN diode
SOD523 SC-79
1
2
BAP51 02
2
ANODE
1
CATHODE
FEATURES
Low diode capacitance
Low diode forward resistance.
APPLICATIONS
General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 small SMD plastic package.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
60
V
I
I
F
continuous forward current
50
mA
P
tot
total power dissipation
T
s
=90C
715
mW
T
stg
storage temperature
-65
+150
C
T
j
junction temperature
-65
+150
C
ELECTRICAL CHARACTERISTICS T
j
= 25C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
=50 mA
0.95
1.1
V
V
R
reverse voltage
I
R
=10mA
50
V
I
R
reverse current
V
R
=50 V
100
nA
C
d
diode capacitance
V
R
= 0; f = 1 MHz
0.4
pF
V
R
= 1 V; f = 1 MHz
0.3
0.55
pF
V
R
= 5 V; f = 1 MHz
0.2
0.35
pF
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
5.5
9
I
F
= 1 mA; f = 100 MHz; note 1
3.6
6.5
I
F
= 10 mA; f = 100 MHz; note 1
1.5
2.5
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering-point
85
K/W
LESHAN RADIO COMPANY, LTD.
S242/2
BAP51-02
10
5
2
1
0
4
8
12
16
20
I
F
(mA )
r
D
(
)
500
400
300
200
100
0
10
-1
1
10
V
R
( V )
C
d
(pF)
f = 100 MHz; T
j
=25C
f = 1 MHz; T
j
=25C
0
-5
-10
-15
-20
-25
f (GHz )
0
-0.5
-1
-1.5
-2
-2.5
0.5
1
1.5
2
2.5
3
f (GHz )
|s
21
|
2
(dB)
Fig.1 Forward resistance as a function of
forward current; typical values.
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
|s
21
|
2
(dB)
0.5
1
1.5
2
2.5
3
(1) I
F
=10 mA.
(2) I
F
= 1 mA.
(3) I
F
= 0.5 mA.
Fig.3 Insertion loss ( |s
21
|
2
) of the diode in on-state
as a function of frequency; typical values.
Diode inserted in series with a 50
stripline circuit and
biased via the analyzer Tee network.
Tamb =25C.
Fig.4 Isolation ( |s
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
Diode zero biased and inserted in
series with a 50
stripline circuit.
Tamb =25C.