LESHAN RADIO COMPANY, LTD.
G31/2
1
3
2
High Voltage Switching Diode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
V
R
250
Vdc
Peak Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM(surge)
625
mAdc
DEVICE MARKING
BAS21LT1 = JS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
ELECTRICAL CHARACTERISTICS
(T A = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
I
R
Adc
(V
R
= 200Vdc)
--
1.0
(V
R
= 200Vdc, T
J
= 150C)
--
100
Reverse Breakdown Voltage
V
(BR)
250
--
Vdc
(I
BR
= 100
Adc)
Forward Voltage
V
F
mV
(I
F
= 100 mAdc)
--
1000
(I
F
= 200 mAdc)
--
1250
Diode Capacitance
C
D
--
5.0
pF
(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
t
rr
--
50
ns
(I
F
= I
R
= 30mAdc, R
L
= 100
)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BAS21LT1
CASE 31808, STYLE 8
SOT23 (TO236AB)
3
CATHODE
1
ANODE
LESHAN RADIO COMPANY, LTD.
G32/2
BAS21LT1
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F
) of 30 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 30 mA.
Notes:
3. t
p
t
rr
Figure 1. Recovery Time Equivalent Test Circuit
+10 V
2.0 k
820
100
H
0.1
F
D.U.T.
0.1
F
50
OUTPUT
PULSE
GENERATOR
t
r
50
INPUT
SAMPLING
OSCILLOSCOPE
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 3.0 mA
OUTPUT PULSE
(I
F
= I
R
= 30 mA; MEASURED
at i
R(REC)
= 3.0 mA)
INPUT SIGNAL
I
F
V
R
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