LESHAN RADIO COMPANY, LTD.
G51/1
1
ANODE
2
ANODE
3
CATHODE
1
3
2
Monolithic Dual Switching Diode
Common Cathode
DEVICE MARKING
BAV70LT1 = A4
MAXIMUM RATINGS
(EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
70
Vdc
Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
Adc)
V
(BR)
70
--
Vdc
Reverse Voltage Leakage Current
I
R
Adc
(V
R
= 25 Vdc, T
J
= 150C)
--
60
(V
R
= 70 Vdc)
--
2.5
(V
R
= 70 Vdc, T
J
= 150C)
--
100
Diode Capacitance
C
D
--
1.5
pF
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
V
F
mVdc
(I
F
= 1.0 mAdc)
--
715
(I
F
= 10 mAdc)
--
855
(I
F
= 50 mAdc)
--
1000
(I
F
= 150 mAdc)
--
1250
Reverse Recovery Time
R
L
= 100
t
rr
--
6.0
ns
(I
F
= I
R
= 10 mAdc, V
R
= 5.0 Vdc, I
R(REC)
= 1.0 mAdc) (Figure 1)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BAV70LT1
CASE 31808, STYLE 9
SOT23 (TO236AB)
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