LESHAN RADIO COMPANY, LTD.
G61/2
1
ANODE
2
ANODE
3
CATHODE
1
3
2
DEVICE MARKING
BAV74LT1 = JA
MAXIMUM RATINGS
(EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
50
Vdc
Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) ( EACH DIODE )
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 5.0
Adc)
V
(BR)
50
--
Vdc
Reverse Voltage Leakage Current
I
R
Adc
(V
R
= 50 Vdc, T
J
= 125C)
--
100
(V
R
= 50Vdc)
--
0.1
Diode Capacitance
C
D
--
2.0
pF
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
V
F
Vdc
(I
F
= 100 mAdc)
--
1.0
Reverse Recovery Time
t
rr
--
4.0
ns
(I
F
=I
R
=10mAdc, I
R(REC)
=1.0mAdc, measured at I
R
= 1.0 mA, R
L
=100
)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BAV74LT1
CASE 31808, STYLE 9
SOT23 (TO236AB)
Monolithic Dual Switching Diode
LESHAN RADIO COMPANY, LTD.
G62/2
100
10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
T
A
= 85C
T
A
= 150C
T
A
= 125C
T
A
= 85C
T
A
= 55C
0
10
20
30
40
50
10
1.0
0.1
0.01
0.001
0
2
4
6
8
1.0
0.9
0.8
0.7
0.6
I
F
, FOR
W
ARD CURRENT (mA)
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
I
R
, REVERSE CURRENT (
A)
C
T
T
O
T
AL CAP
ACIT
ANCE (pF)
BAV74LT1
Curves Applicable to Each Anode
T
A
= 40C
T
A
= 25C
T
A
= 25C
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