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Электронный компонент: BB182

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LESHAN RADIO COMPANY, LTD.
BB1821/2
VHF variable capacitance diode
SOD523 SC-79
1
2
BB 182
2
ANODE
1
CATHODE
FEATURES
High linearity
Excellent matching to 2% DMA
Ultra small plastic SMD package
C28: 2.7 pF; ratio: 22
Low series resistance.
APPLICATIONS
Electronic tuning in VHF television tuners, band A up to 160 MHz
Voltage controlled oscillators (VCO).
DESCRIPTION
The BB182 is a planar technology variable capacitance diode, in a SOD523 (SC-79)
package. The excellent matching performance is achieved by gliding matching and a
direct matching assembly procedure.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
32
V
V
RM
peak reverse voltage
in series with a 10 k
resistor
35
V
I
F
continuous forward current
20
mA
T
stg
storage temperature
55
+150
C
T
j
operating junction temperature
55
+125
C
ELECTRICAL CHARACTERISTICS T
j
=25C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
TYP.
UNIT
I
R
reverse current
V
R
= 30 V; see Fig.2
10
nA
V
R
= 30 V; T
j
=85C; see Fig.2
200
nA
r
s
diode series resistance
f = 100 MHz;
1
1.2
V
R
is the value at which Cd =30 pF
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz; see Figs 1and 3
52
62
pF
V
R
= 28 V; f = 1 MHz; see Figs 1and 3
2.48
2.89
pF
C
d(1V)
capacitance ratio
f = 1 MHz
1.31
C
d(2V)
C
d(1V)
capacitance ratio
f = 1 MHz
20.6
C
d(28V)
C
d(25V)
capacitance ratio
f = 1 MHz
1.05
C
d(28V)
C
d
capacitance matching
V
R
= 1 to 28 V; in a sequence of 15
2
%
C
d
diodes(gliding)
MARKING CODE:2
2
1
2
LESHAN RADIO COMPANY, LTD.
BB1822/2
BB 182
80
70
60
50
40
30
20
10
0
10
1
1
10
10
2
V
R
( V )
C
d
( pF )
10
3
10
4
10
5
10
1
1
10
10
2
V
R
( V )
TC
d
( K
-1
)
10
3
10
2
10
0
50
100
T
j
( C )
I
R
(nA)
Fig.1 Diode capacitance as a function of reverse voltage; typical values.
Fig.2 Reverse current as a function of junction
temperature; maximum values.
Fig.3 Temperature coefficient of diode capacitance as a function of
reverse voltage; typical values.
f = 1 MHz; T
j
=25C
T
j
= 0 to 85 C.