LESHAN RADIO COMPANY, LTD.
S61/3
Silicon Variable Capacitance Diode
For UHF and TV/TR tuners
Large capacitance ratio, low series resistance
CASE 477 02, STYLE 1
SOD 323
1
2
BB 535
2
ANODE
1
CATHODE
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Diode Reverse Voltage
V
R
30
V
Peak reverse voltage ( R > 5k
)
V
RM
35
V
Forward Current
I
F
20
mA
Operating temperature range
T
op
- 55 ~ + 125
C
Storage temperature
T
stg
- 55 ... + 150
C
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction - ambient
R
thJA
<450
K/W
DC CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse current
I
R
nA
V
R
= 30 V, T
A
= 25 C
10
V
R
= 30 V, T A = 85 C
200
AC CHARACTERISTICS
Diode capacitance
C
T
pF
V
R
= 1 V, f = 1 MHz
17.5
18.7
20
V
R
= 2 V, f = 1 MHz
14.01
15
16.1
V
R
= 25 V, f = 1 MHz
2.05
2.24
2.4
V
R
= 28 V, f = 1 MHz
1.9
2.1
2.3
Capacitance ratio
C
T2
/ C
T25
V
R
= 2 V, V
R
= 25 V, f = 1 MHz
6
6.7
7.5
Capacitance ratio
C
T1
/ C
T28
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
8.2
8.9
9.8
Capacitance matching
C
T
/ C
T
%
V
R
= 1 ... 28 V, f = 1 MHz
2.5
Series resistance
r
s
V
R
= 3 V, f = 470 MHz
0.55
0.65
Series inductance
L s
2
nH
LESHAN RADIO COMPANY, LTD.
S62/3
BB 535
20
18
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
Diode capacitance
C
T
= f ( V
R
) f = 1MHz
Temperature coefficient of the diodecapacitance
T
Cc
= f ( V
R
) f = 1MHz
Normalized diode capacitance
C (T
A
) / C (25C) = f ( T
A
), f = 1MHz, V
R
= Parameter
Reverse current
I
R
= f ( T
A
), V
R
= 28V
V
R
( V )
C
T
( pF )
10
-1
10
-2
10
-3
10
-4
10
-5
10
0
10
1
10
2
V
R
( V )
T
Cc
( 1/
C
)
1.06
1.04
1.02
1.00
0.98
0.96
-30
-10
10
30
50
70
90
110
T
A
( C )
C
TA
/ C
25
10
3
10
2
10
1
10
0
-10
10
30
50
70
90
100
T
A
( C )
I
R
( pA )
1V
2V
25V
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