LESHAN RADIO COMPANY, LTD.
K41/4
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC846
BC847
BC848
Unit
CollectorEmitter Voltage
V
CEO
65
45
30
V
CollectorBase Voltage
V
CBO
80
50
30
V
EmitterBase Voltage
V
EBO
6.0
6.0
5.0
V
Collector Current -- Continuous
I
C
100
100
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
150
mW
T
A
= 25C
Thermal Resistance, Junction to Ambient
R
JA
833
C/W
Total Device Dissipation
P
D
2.4
mW/C
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
BC846 Series
65
--
--
(I
C
= 10 mA)
BC847 Series
V
(BR)CEO
45
--
--
v
BC848 Series
30
--
--
CollectorEmitter Breakdown Voltage
BC846 Series
80
--
--
(I
C
= 10
A, V
EB
= 0)
BC847 Series
V
(BR)CES
50
--
--
v
BC848 Series
30
--
--
CollectorBase Breakdown Voltage
BC846 Series
80
--
--
(I
C
= 10
A)
BC847 Series
V
(BR)CBO
50
--
--
v
BC848 Series
30
--
--
EmitterBase Breakdown Voltage
BC846 Series
6.0
--
--
(I
E
= 1.0
A)
BC847 Series,
V
(BR)EBO
6.0
--
--
v
BC848 Series
5.0
--
--
Collector Cutoff Current (V
CB
= 30 V)
I
CBO
--
--
15
nA
(V
CB
= 30 V, T
A
= 150C)
--
--
5.0
A
BC846AWT1,BWT1
BC847AWT1,BWT1
CWT1
BC848AWT1,BWT1
CWT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 41902, STYLE 3
SOT323 /SC70
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT323/SC70 which is
designed for low power surface mount applications.
1.FR5=1.0 x 0.75 x 0.062in
LESHAN RADIO COMPANY, LTD.
K42/4
BC846AWT1,BWT1 BC847AWT1,BWT1 CWT1 BC848AWT1,BWT1,CWT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A
h
FE
--
90
--
--
(I
C
= 10
A, V
CE
= 5.0 V)
BC846B, BC847B, BC848B
--
150
--
BC847C, BC848C
--
270
--
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC846A, BC847A, BC848A
110
180
220
BC846B, BC847B, BC848B
200
290
450
BC847C, BC848C
420
520
800
CollectorEmitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
V
CE(sat)
--
--
0.25
V
CollectorEmitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
--
--
0.6
BaseEmitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
V
BE(sat)
--
0.7
--
V
BaseEmitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
--
0.9
--
BaseEmitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
V
BE(on)
580
660
700
mV
BaseEmitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
--
--
770
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
f
T
100
--
--
MHz
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
C
obo
--
--
4.5
pF
Noise Figure (I
C
= 0.2 mA,
BC846A, BC847A, BC848A
NF
dB
V
CE
= 5.0 V
dc
, R
S
= 2.0 k
,
BC846B, BC847B, BC848B
--
--
10
f = 1.0 kHz, BW = 200 Hz)
BC847C, BC848C
--
--
4.0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. "Saturation" and "On" Voltages
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
V
CE
= 10 V
T
A
= 25C
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
T
A
= 25C
V
BE(sat)
@ I
C
/I
B
=10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
T
A
= 25C
V
,
VOL
T
A
GE (VOL
TS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VB
, TEMPERA
TURE COEFFICIENT (mV/ C)
1.0
1.2
1.6
2.0
2.4
2.8
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
V
CE
, COLLECT
OR EMITTER VOL
T
AGE (V)
I
C
= 200 mA
55C to +125C
I
C
, COLLECTOR CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
2.0
1.6
1.2
0.8
0.4
0
I
C
=
10 mA
I
C
= 100 mA
I
C
=
20 mA
I
C
= 50 mA
h
FE
, NORMALIZED DC CURRENT GAIN
0.2
1.0
10
100
0.02
0.1
1.0
10
20
LESHAN RADIO COMPANY, LTD.
K43/4
BC846AWT1, BWT1 BC847AWT1, BWT1, CWT1 BC848AWT1, BWT1, CWT1
BC847/BC848
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. CurrentGain Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. "On" Voltage
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
T
A
= 25C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
V
CE
= 10V
T
A
= 25C
T
A
= 25C
V
CE
= 5V
T
A
= 25C
V
CE(sat)
@ I
C
/I
B
= 10
V
CE
, COLLECT
OR EMITTER VOL
T
AGE (VOL
TS)
VB
, TEMPERA
TURE COEFFICIENT (mV/C)
h
FE
, DC CURRENT GAIN (NORMALIZED)
V
,
VOL
T
AGE (VOL
TS)
f
T
, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
V
,
VOL
T
AGE (VOL
TS)
I
C
=
10 mA
100mA
20mA
200mA
T
A
= 25C
VB
for V
BE
55C to 125C
C
ob
C
ib
1.0
1.4
1.8
2.2
2.6
3.0
1.0
0.8
0.6
0.4
0.2
0
400
300
200
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
2.0
1.0
0.5
0.2
2.0
1.6
1.2
0.8
0.4
0
0.4 0.6 0.81.0
2.0
4.0 6.0 8.010
20
40
0.5 0.7 1.0
2.0
3.0
5.0 7.010
20
30
50
0.1 0.2
1.0
10
100
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
0.02
0.05 0.1
0.2
0.5 1.0
2.0
5.0
10
20
50mA
LESHAN RADIO COMPANY, LTD.
K44/4
BC846AWT1, BWT1 BC847AWT1, BWT1, CWT1 BC848AWT1, BWT1, CWT1
BC846
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. CurrentGain Bandwidth Product
C, CAP
ACIT
ANCE (pF)
f
T
, CURRENT GAIN BANDWIDTH PRODUCT T
C
ob
C
ib
T
A
= 25C
V
CE
= 5 V
T
A
= 25C
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
1.0
5.0 10
50 100
40
20
10
6.0
4.0
2.0
500
200
100
50
20
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