M351/3
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
50
V
CollectorBase Voltage
V
CBO
60
V
EmitterBase Voltage
V
EBO
6.0
V
Collector Current -- Continuous
I
C
150
mAdc
Collector power dissipation
P
C
0.2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ~+150
C
DEVICE MARKING
BC857BRLT1 =G3F
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
CollectorEmitter Breakdown Voltage
V
(BR)CEO
50
--
--
V
(I
C
= 1 mA)
EmitterBase Breakdown Voltage
V
(BR)EBO
6
--
--
V
(I
E
= 50
A)
CollectorBase Breakdown Voltage
V
(BR)CBO
60
--
--
V
(I
C
= 50
A)
Collector Cutoff Current
I
CBO
--
--
0.1
A
(V
CB
= 60 V)
Emitter cutoff current
I
EBO
--
--
0.1
A
(V
EB
= 6 V)
Collector-emitter saturation voltage
V
CE(sat)
--
--
-0.5
V
(I
C
/ I
B
= 50 mA / 5m A)
DC current transfer ratio
h
FE
120
560
(V
CE
= 6 V, I
C
= 1mA)
Transition frequency
f
T
--
140
MHz
(V
CE
= 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
C
ob
--
4.0
5.0
pF
(V
CB
= 12 V, I
E
= 0A, f =1MHz )
h
FE
values are classified as follows:
Q
R
S
hFE
120~270
180~390
270~560
1
3
2
BC857BRLT1
is LRC prefered Device
CASE 31808, STYLE 6
SOT 23 (TO236AB)
2
EMITTER
3
COLLECTOR
1
BASE
*
M352/3
LESHAN RADIO COMPANY, LTD.
BC857BRLT1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T
A
= 100C
25C
40C
50
20
10
50
2
1
0.5
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
T
A
= 25C
10
8
6
4
2
0
I
C
, COLLECT
OR CURRENT
(mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
V
CE
= 10 V
V
BE
,
BASE TO EMITTER VOLTAGE(V)
I
C
, COLLECT
OR CURRENT
(mA)
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
35.0
31.5
28.0
24.5
21.0
17.5
14.0
10.5
7.0
3.5
A
I
B
=0
0
1
2
3
4
5
T
A
= 25C
100
80
60
40
20
0
I
C
, COLLECT
OR CURRENT
(mA)
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
250
200
150
500
450
400
350
300
100
50
A
I
B
=0
T
A
= 25C
500
200
100
50
h
FE
, DC CURRENT GAIN
V
CE
= 5 V
3V
1V
I
C
, COLLECTOR CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 100C
500
200
100
50
h
FE
, DC CURRENT GAIN
V
CE
= 6V
I
C
, COLLECTOR CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
25C
40C
1
0.5
0.2
0.1
0.05
V
CE(sat)
, COLLECT
OR SA
TURA
TION VOL
T
AGE(V)
I
C
, COLLECTOR CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 25C
I
C
/I
B
= 50
20
10
M353/3
LESHAN RADIO COMPANY, LTD.
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
1
0.5
0.2
0.1
0.05
V
CE(sat)
, COLLECT
OR SA
TURA
TION VOL
T
AGE(V)
I
C
, COLLECTOR CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 100C
25C
40C
I
C
/I
B
= 10
BC857BRLT1
Fig.8 Gain bandwidth product vs. emitter current
1000
500
200
100
50
f
r
, TRANSITION FREQUENCY(MHz)
I
E
, EMITTER CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 25C
V
CE
= 12V
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
10
5
2
C
ob
, COLLECT
OR OUTPUT
C
A
P
ACIT
ANCE( pF)
C
ib
, EMITTER INPUT
CAP
ACIT
ANCE (pF)
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
0.5
1
2
5
10
20
T
A
= 25C
f =1MHz
I
E
= 0A
I
C
= 0A
C
ib
C
ob
PDF 
ZIP