LESHAN RADIO COMPANY, LTD.
K51/5
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
CollectorEmitter Voltage
V
CEO
65
45
30
V
CollectorBase Voltage
V
CBO
80
50
30
V
EmitterBase Voltage
V
EBO
5.0
5.0
5.0
V
Collector Current -- Continuous
I
C
100
100
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
150
mW
T
A
= 25C
Thermal Resistance, Junction to Ambient
R
JA
833
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
BC856 Series
65
--
--
(I
C
= 10 mA)
BC857 Series
V
(BR)CEO
45
--
--
v
BC858 Series
30
--
--
CollectorEmitter Breakdown Voltage
BC856 Series
80
--
--
(I
C
= 10
A, V
EB
= 0)
BC857 Series
V
(BR)CES
50
--
--
v
BC858 Series
30
--
--
CollectorBase Breakdown Voltage
BC856 Series
80
--
--
(I
C
= 10
A)
BC857 Series
V
(BR)CBO
50
--
--
v
BC858 Series
30
--
--
EmitterBase Breakdown Voltage
BC856 Series
5.0
--
--
(I
E
= 1.0
A)
BC857 Series,
V
(BR)EBO
5.0
--
--
v
BC858 Series
5.0
--
--
Collector Cutoff Current (V
CB
= 30 V)
I
CBO
--
--
15
nA
(V
CB
= 30 V, T
A
= 150C)
--
--
4.0
A
1.FR5=1.0 x 0.75 x 0.062in
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT323/
SC70 which is designed for low power surface mount
applications.
1
3
2
BC856AWT1, BWT1
BC857AWT1, BWT1
BC858AWT1, BWT1
CWT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 41902, STYLE 3
SOT 323 / SC-70
LESHAN RADIO COMPANY, LTD.
K52/5
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
BC856A, BC857A, BC858A
h
FE
--
90
--
--
(I
C
= 10
A, V
CE
= 5.0 V)
BC856B, BC857B, BC858B
--
150
--
BC858C,
--
270
--
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC856A, BC857A, BC858A
125
180
250
BC856B, BC857B, BC858B
220
290
475
BC858C
420
520
800
CollectorEmitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
V
CE(sat)
--
--
0.3
V
CollectorEmitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
--
--
0.65
BaseEmitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
V
BE(sat)
--
0.7
--
V
BaseEmitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
--
0.9
--
BaseEmitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
V
BE(on)
0.6
--
0.75
V
BaseEmitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
--
--
0.82
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
f
T
100
--
--
MHz
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
C
ob
--
--
4.5
pF
Noise Figure
NF
10
dB
(I
C
= 0.2 mA,V
CE
= 5.0 V
dc
, R
S
= 2.0 k
, f =1.0 kHz, BW= 200 Hz)
BC856AWT1, BWT1 BC857AWT1, BWT1 BC858AWT1, BWT1, CWT1
LESHAN RADIO COMPANY, LTD.
K53/5
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
BC857/BC858
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. "Saturation" and "On" Voltages
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
V
CE
= 10 V
T
A
= 25C
2.0
1.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
T
A
= 25C
V
BE(sat)
@ I
C
/I
B
=10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
T
A
= 25C
V
,
VOL
T
A
GE (VOL
TS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VB
, TEMPERA
TURE COEFFICIENT (mV/ C)
1.0
1.2
1.6
2.0
2.4
2.8
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
V
CE
, COLLECT
OR EMITTER VOL
T
AGE (V)
I
C
= 200 mA
55C to +125C
I
C
, COLLECTOR CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
0.2
1.0
10
100
0.02
0.1
1.0
10
20
2.0
1.6
1.2
0.8
0.4
0
I
C
=
10 mA
I
C
= 100 mA
I
C
= 20 mA
I
C
= 50 mA
h
FE
, NORMALIZED DC CURRENT GAIN
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. CurrentGain Bandwidth Product
T
A
=25C
V
CE
= 10V
T
A
= 25C
f
T
, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
C, CAP
ACIT
ANCE(pF)
C
ob
C
ib
400
300
200
150
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
0.4
0.6
1.0
2.0
4.0
6.0
10
20
30
40
0.5
1.0
2.0
3.0
5.0
10
20
30
50
LESHAN RADIO COMPANY, LTD.
K54/5
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. "On" Voltage
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
V
BE(sat)
@ I
C
/I
B
=10
V
BE
@V
CE
= 5.0 V
T
J
= 25C
V
CE
= 5.0V
T
A
= 25C
V
CE(sat)
@ I
C
/I
B
= 10
V
CE
, COLLECT
OR EMITTER VOL
T
AGE (VOL
TS)
VB
, TEMPERA
TURE COEFFICIENT (mV/C)
V
,
VOL
T
AGE (VOL
TS)
I
C
=
10mA
100mA
20mA
200mA
T
J
= 25C
VB
for V
BE
55C to 125C
1.0
1.4
1.8
2.2
2.6
3.0
1.0
0.8
0.6
0.4
0.2
0
2.0
1.0
0.5
0.2
2.0
1.6
1.2
0.8
0.4
0
0.10.2
1.0 2.0 5.0 10 20 50 100200
0.2
0.5 1.0 2.0
5.0
10 20
50 100 200
0.2
0.5 1.0 2.0
5.0
10 20
50 100 200
0.02
0.05 0.1 0.2
0.5
1.0 2.0
5.0
10 20
h
FE
, DC CURRENT GAIN (NORMALIZED)
50mA
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. CurrentGain Bandwidth Product
C, CAP
ACIT
ANCE (pF)
f
T
, CURRENT GAIN BANDWIDTH PRODUCT T
C
ob
C
ib
T
J
= 25C
V
CE
= 5.0V
0.1 0.2 0.5
1.0 2.0
5.0
10 20
50 100
1.0
10
100
40
20
10
6.0
4.0
2.0
500
200
100
50
20
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
BC856
LESHAN RADIO COMPANY, LTD.
K55/5
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
t, TIME (ms)
Figure 13. Thermal Response
V
CE
, COLLECTOREMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate I
C
V
CE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150C; T
C
or T
A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
J(pk)
< 150C. T
J(pk)
may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
BC558
BC557
BC556
Z
JC
(t) = r(t) R
JC
R
JC
= 83.3C/W MAX
Z
JA
(t) = r(t) R
JA
R
JA
= 200C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
R
JC
(t)
I
C
, COLLECT
OR CURRENT (mA)
r( t), TRANSIENT THERMAL
RESIST
ANCE (NORMALIZED)
DUTY CYCLE, D = t
1
/t
2
t
1
t
2
P
(pk)
SINGLE PULSE
SINGLE PULSE
T
A
= 25C
T
J
= 25C
3 ms
1s
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
D=0.5
0.2
0.1
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
1.0
0.5
10
30 45 65 100
200
100
50
10
5.0
2.0
PDF 
ZIP