LESHAN RADIO COMPANY, LTD.
M81/6
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
20
Vdc
CollectorBase Voltage
V
CBO
30
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current -- Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
BCW33LT1 = D3
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 2.0mAdc, I
B
= 0 )
V
(BR)CEO
32
--
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10
Adc, I
B
= 0)
V
(BR)CBO
32
--
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10
Adc, I
C
= 0)
V
(BR)EBO
5.0
--
Vdc
Collector Cutoff Current
I
CBO
(V
CB
= 32 Vdc, I
E
= 0 )
--
100
nAdc
(V
CB
= 32 Vdc, I
E
= 0, T
A
= 100C)
--
10
Adc
1. FR 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BCW33LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 31808, STYLE 6
SOT23 (TO236AB)
LESHAN RADIO COMPANY, LTD.
M82/6
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
420
800
--
( I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc )
CollectorEmitter Saturation Voltage
V
CE(sat)
--
0.25
Vdc
( I
C
= 10 mAdc, I
B
= 0.5 mAdc )
BaseEmitter On Voltage
V
BE(on)
0.55
0.70
Vdc
( I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc )
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
C
obo
--
4.0
pF
( V
CB
= 10 Vdc,I
E
= 0, f = 1.0 MHz)
Noise Figure
NF
--
10
dB
( I
C
= 0.2 mAdc, V
CE
= 5.0 Vdc, R
S
= 2. 0
k
, f = 1.0 kHz, BW = 200 Hz )
BCW33LT1
Figure 1. TurnOn Time
Figure 2. TurnOff Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
C
S
< 4.0 pF*
10 k
+3.0 V
275
C
S
< 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
0.5 V
10 < t
1
< 500
s
DUTY CYCLE = 2%
+10.9 V
<1.0 ns
<1.0 ns
+10.9 V
t
1
9.1 V
0
LESHAN RADIO COMPANY, LTD.
M83/6
BCW33LT1
Noise Figure is Defined as:
NF = 20 log
10
(
)
1/ 2
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K
= Boltzman's Constant (1.38 x 10
23
j/K)
T
= Temperature of the Source Resistance (K)
R
s
= Source Resistance (
)
e
n
2
+ 4KTR
S
+ I
n
2
R
S
2
4KTR
S
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25C)
f, FREQUENCY (Hz)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
Figure 4. Noise Current
I
C
, COLLECTOR CURRENT (
A)
Figure 5. Narrow Band, 100 Hz
I
C
, COLLECTOR CURRENT (
A)
Figure 7. Wideband
I
C
, COLLECTOR CURRENT (
A)
Figure 6. Narrow Band, 1.0 kHz
e
n
, NOISE VOL
T
AGE (nV)
BANDWIDTH = 1.0 Hz
R
S
= 0
I
C
= 1.0mA
100
A
30
A
300
A
I
n
, NOISE CURRENT (pA)
BANDWIDTH = 1.0 Hz
R
S
I
C
=1.0mA
300
A
100
A
30
A
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25C)
R
S
, SOURCE RESIST
ANCE (
)
R
S
, SOURCE RESIST
ANCE (
)
R
S
, SOURCE RESIST
ANCE (
)
20
10
7.0
5.0
3.0
2.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
200
300
500 700 1.0K
10
20
30
50
70
100
200
300
500 700 1.0K
10
20
30
50
70
100
200
300
500 700 1.0K
10 dB
4.0dB
2.0dB
3.0 dB
1.0dB
2.0 dB
3.0dB
5.0dB
1.0dB
2.0dB
3.0 dB
5.0 dB
10 Hz to 15.7KHz
10
A
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
6.0 dB
~
~
8
8.0dB
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
8.0 dB
10
A
LESHAN RADIO COMPANY, LTD.
M84/6
TYPICAL STATIC CHARACTERISTICS
BCW33LT1
I
B
, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 9. Collector Characteristics
I
C
, COLLECTOR CURRENT (mA)
Figure 10. "On" Voltages
I
C
, COLLECT
OR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OR EMITTER VOL
T
AGE (VOL
TS)
V
, TEMPERA
TURE COEFFICIENTS (mV/C)
VB
for V
BE
VC
for V
CE(sat)
V
BE(on)
@ V
CE
= 1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
T
J
= 25C
I
C
= 1.0 mA
50 mA
100 mA
10 mA
T
J
= 25C
BCW33LT1
*APPLIES for I
C
/ I
B
< h
FE
/ 2
T
A
= 25C
PULSE WIDTH =300
s
DUTY CYCLE<2.0%
I
B
= 500
A
100
A
200
A
300
A
400
A
55C to 25C
55C to 25C
25C to 125C
25C to 125C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
1.6
0.8
0
0.8
1.6
2.4
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
1.0
0.8
0.6
0.4
0.2
0
0.002 0.0050.010.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10
20
100
80
60
40
20
0
0
5.0
10
15
20
25
30
35
40
LESHAN RADIO COMPANY, LTD.
M85/6
TYPICAL DYNAMIC CHARACTERISTICS
C, CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
Figure 12. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
Figure 13. TurnOff Time
I
C
, COLLECTOR CURRENT (mA)
Figure 14. CurrentGain -- Bandwidth Product
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 15. Capacitance
t, TIME (ns)
t, TIME (ns)
f
T
, CURRENT GAIN -- BANDWIDTH PRODUCT (MHz)
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25C
t
d
@ V
BE(off)
= 0.5 Vdc
t
r
V
CC
= 3.0 V
I
C
/I
B
= 10
I
B1
=I
B2
T
J
= 25C
t
f
t
s
T
J
= 25C
f =100MHz
V
CE
=20 V
5.0 V
C
ib
C
ob
T
J
= 25C
f = 1.0MHz
300
200
100
70
50
30
20
10
7.0
5.0
3.0
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
1000
700
500
300
200
100
70
50
30
20
10
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
500
300
200
100
70
50
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
10.0
7.0
5.0
3.0
2.0
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
Figure 16. Thermal Response
r( t) TRANSIENT THERMAL RESIST
ANCE(NORMALIZED)
D = 0.5
0.02
0.05
0.1
0.2
0.01
SINGLE PULSE
DUTY CYCLE, D = t
1
/ t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN569)
Z
JA(t)
= r(t) R
JA
T
J(pk)
T
A
= P
(pk)
Z
JA(t)
FIGURE 19A
P
(pk)
t
2
t
1
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
20k
50k
100k
BCW33LT1
LESHAN RADIO COMPANY, LTD.
M86/6
T
J
, JUNCTION TEMPERATURE (C)
Figure 16A.
V
CC
= 30 Vdc
I
C
, COLLECT
OR CURRENT (nA)
10
4
10
3
10
2
10
1
10
0
10
1
10
2
4
2
0
+20
+40
+60
+80
+100
+120
+140
+160
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 Vdc
I
CEO
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the
model as shown in Figure 16A. Using the model and the device
thermal response the normalized effective transient thermal re-
sistance of Figure 16 was calculated for various duty cycles.
To find Z
JA(t)
, multiply the value obtained from Figure 16 by
the steady state value R
JA
.
Example:
The MPS3904 is dissipating 2.0 watts peak under the follow-
ing conditions:
t
1
= 1.0 ms, t
2
= 5.0 ms. (D = 0.2)
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P
(pk)
x R
JA
= 0.22 x 2.0 x 200 = 88C.
For more information, see AN569.
BCW33LT1
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