LESHAN RADIO COMPANY, LTD.
M121/2
1
3
2
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
45
Vdc
CollectorBase Voltage
V
CBO
60
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current -- Continuous
I
C
800
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
BCW68GLT1 = DH
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0 )
V
(BR)CEO
45
--
--
Vdc
CollectorEmitter Breakdown Voltage (I
C
= 10
Adc, V
EB
= 0 )
V
(BR)CES
60
--
--
Vdc
EmitterBase Breakdown Voltage (I
E
= 10
Adc, I
C
= 0)
V
(BR)EBO
5.0
--
--
Vdc
Collector Cutoff Current
I
CES
(V
CE
= 45 Vdc, I
E
= 0 )
--
--
20
nAdc
(V
CE
= 45 Vdc, I
B
= 0 , T
A
= 150C)
--
--
10
Adc
Emitter Cutoff Current (V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
--
--
20
nAdc
1. FR 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BCW68GLT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 31808, STYLE 6
SOT23 (TO236AB)
LESHAN RADIO COMPANY, LTD.
M122/2
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
--
( I
C
= 10 mAdc, V
CE
= 1.0 Vdc )
120
--
400
( I
C
= 100 mAdc, V
CE
= 1.0 Vdc )
160
--
--
( I
C
= 300 mAdc, V
CE
= 1.0 Vdc )
60
--
--
CollectorEmitter Saturation Voltage
V
CE(sat)
--
--
1.5
Vdc
( I
C
= 300 mAdc, I
B
= 30 mAdc )
BaseEmitter Saturation Voltage
V
BE(sat)
--
--
2.0
Vdc
( I
C
= 500 mAdc, I
B
= 50 mAdc )
SM
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
f
T
100
--
--
MHz
(I
C
= 20mAdc, V
CE
= 10 Vdc, f = 100 MHz)
Output Capacitance
C
obo
--
--
18
pF
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
C
ibo
--
--
105
pF
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Noise Figure
NF
--
--
10
dB
(V
CE
= 5.0 Vdc, I
C
= 0.2 mAdc, R
S
= 1.0 k
, f = 1.0 kHz, BW = 200 Hz)
BCW68GLT1
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