LESHAN RADIO COMPANY, LTD.
HVC3591/2
Variable Capacitance Diode
for VCXO
FEATURES
High capacitance ratio and good C-V linearity.
To be usable at low voltage.
Ultra small Flat Package (UFP) is suitable for surface mount
design.
DEVICE MARKING
HVC359 = S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Item
Symbol
Value
Unit
Reversevoltage
V
R
15
V
Junction temperature
T
j
125
C
Storage temperature
T
stg
55 to +125
C
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse current
I
R1
10
nA
V
R
= 10V
I
R2
100
V
R
= 10V, T
A
= 60C
Capacitance
C
1
24.8
29.8
pF
V
R
= 1V, f = 1 MHz
C
4
6.0
8.3
V
R
= 4V, f = 1 MHz
Capacitance ratio
n
3.0
C
1
/ C
4
Series resistance r
s
1.5
V
R
= 4V, f = 100 MHz
ESD-Capability
*1
80
V
C =200pF , Both forward
and reverse direction
1 pulse.
Notes 1. Failure criterion ; I
R
20nA at V
R
=10 V
2
ANODE
1
CATHODE
SOD 523
1
2
HVC359
LESHAN RADIO COMPANY, LTD.
HVC3592/2
HVC359
Reverse voltage V
R
(V)
Fig.1 Reverse current Vs. Reverse voltage
Reverse voltage V
R
(V)
Fig.2 Capacitance Vs. Reverse voltage
I
R
, REVERSE CURRENT (A)
C , CAP
ACIT
ANCE (pF)
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