LESHAN RADIO COMPANY, LTD.
L2N5401
L
2N5401-1/4
PNP Silicon
Amplifier Transistors
L2N5401
TO-92
1 2
3
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
2N5401
Unit
Collector - Emitter Voltage
V
CEO
150
Vdc
Collector - Base Voltage
V
CBO
160
Vdc
Emitter - Base Voltage
V
EBO
5.0
Vdc
Collector Current - Continuous
I
C
600
mAdc
Total Device Dissipation
@ T
A
= 25
C
Derate above 25
C
P
D
625
5.0
mW
mW/
C
Total Device Dissipation
@ T
C
= 25
C
Derate above 25
C
P
D
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
-55 to +150
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Ambient
R
q
JA
200
C/W
Thermal Resistance,
Junction-to-Case
R
q
JC
83.3
C/W
2N54
01
Y
= Year
WW
= Work Week
YWW
MARKING DIAGRAM
LESHAN RADIO COMPANY, LTD.
L2N5401-2/4
L2N5401
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
150
-
Vdc
Collector-Base Breakdown Voltage
(I
C
= 100
m
Adc, I
E
= 0)
V
(BR)CBO
160
-
Vdc
Emitter-Base Breakdown Voltage
(I
E
= 10
m
Adc, I
C
= 0)
V
(BR)EBO
5.0
-
Vdc
Collector Cutoff Current
(V
CB
= 120 Vdc, I
E
= 0)
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100
C)
I
CBO
-
-
50
50
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
I
EBO
-
50
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
h
FE
50
60
50
-
240
-
-
Collector-Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
-
-
0.2
0.5
Vdc
Base-Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
-
-
1.0
1.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -- Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
100
300
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
-
6.0
pF
Small-Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
40
200
-
Noise Figure
(I
C
= 250
m
Adc, V
CE
= 5.0 Vdc, R
S
= 1.0 k
W
, f = 1.0 kHz)
NF
-
8.0
dB
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
LESHAN RADIO COMPANY, LTD.
L2N5401-3/4
L2N5401
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
30
100
150
200
0.1
h , CURRENT GAIN
0.5
2.0
3.0
10
0.2
0.3
20
1.0
5.0
FE
T
J
= 125C
25C
-55 C
70
50
20
30
50
100
V
CE
= - 1.0 V
V
CE
= - 5.0 V
Figure 2. Collector Saturation Region
I
B
, BASE CURRENT (mA)
1.0
0.1
0.5
2.0
10
0.2
1.0
5.0
20
50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
Figure 3. Collector Cut-Off Region
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
V CE
, COLLECTOR-EMITTER VOL
T
AGE (VOL
TS)
, COLLECTOR CURRENT (A)
I C
10
3
0.1
0.3
0.2
10
2
10
1
10
0
10
-1
10
-2
10
-3
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
I
C
= 1.0 mA
10 mA
30 mA
100 mA
V
CE
= 30 V
I
C
= I
CES
T
J
= 125C
75C
25C
REVERSE
FORWARD
LESHAN RADIO COMPANY, LTD.
L2N5401-4/4
L2N5401
Figure 4. "On" Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.7
1.0
0.2
Figure 5. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
0
T
J
= 25C
V
CE(sat)
@ I
C
/I
B
= 10
2.5
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
C, CAP
ACIT
ANCE (pF)
100
T
J
= 25C
C
ibo
Figure 6. Switching Time Test Circuit
V
R
, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.5
0.3
0.1
V
BE(sat)
@ I
C
/I
B
= 10
0.3
3.0
30
V, TEMPERA
TURE COEFFICIENT (mV/
C)
Figure 7. Capacitances
10.2 V
V
in
10 ms
INPUT PULSE
V
BB
+8.8 V
100
R
B
5.1 k
0.25 mF
V
in
100
1N914
V
out
R
C
V
CC
-30 V
3.0 k
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
Values Shown are for I
C
@ 10 mA
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.3
3.0
30
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
T
J
= - 55C to 135C
q
VC
for V
CE(sat)
q
VB
for V
BE(sat)
C
obo
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
0.2
0.5
1.0
2.0
5.0
10
20
0.3
3.0
0.7
7.0
t, TIME (ns)
1000
100
200
300
500
700
10
20
30
50
70
0.2
0.5
1.0
2.0
5.0
10
20
0.3
3.0
30 50
100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Turn-On Time
I
C
/I
B
= 10
T
J
= 25C
t
d
@ V
BE(off)
= 1.0 V
V
CC
= 120 V
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 120 V
t, TIME (ns)
2000
100
200
300
500
700
20
30
50
70
0.2
0.5
1.0
2.0
5.0
10
20
0.3
3.0
30 50
100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Turn-Off Time
1000
t
f
@ V
CC
= 120 V
t
f
@ V
CC
= 30 V
t
s
@ V
CC
= 120 V
I
C
/I
B
= 10
T
J
= 25C
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