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Электронный компонент: L2SA1037AKLT1

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LM351/3
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
50 V
CollectorBase Voltage V
CBO
60 V
EmitterBase Voltage V
EBO
6.0 V
Collector Current -- Continuous I
C
150 mAdc
Collector power dissipation P
C
0.2 W
Junction temperature T
j
150 C
Storage temperature T
stg
-55 ~+150 C
DEVICE MARKING
L2SA1037AKQLT1 =FQ L2SA1037AKSLT1 =G3F L2SA1037AKRLT1 =FR
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
CollectorEmitter Breakdown Voltage
V
(BR)CEO
50 -- -- V
(I
C
= 1 mA)
EmitterBase Breakdown Voltage
V
(BR)EBO
6 -- -- V
(I
E
= 50
A)
CollectorBase Breakdown Voltage
V
(BR)CBO
60 -- -- V
(I
C
= 50
A)
Collector Cutoff Current
I
CBO
-- --
0.1
A
(V
CB
= 60 V)
Emitter cutoff current
I
EBO
-- -- 0.1
A
(V
EB
= 6 V)
Collector-emitter saturation voltage
V
CE(sat)
-- -- -0.5 V
(I
C
/ I
B
= 50 mA / 5m A)
DC current transfer ratio h
FE
120 560
(V
CE
= 6 V, I
C
= 1mA)
Transition frequency
f
T
-- 140 MHz
(V
CE
= 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
C
ob
-- 4.0 5.0 pF
(V
CB
= 12 V, I
E
= 0A, f =1MHz )
h
FE
values are classified as follows:
Q
R
S
hFE 120~270 180~390 270~560
1
3
2
SOT 23
2
EMITTER
3
COLLECTOR
1
BASE
*
L2SA1037AK*LT1
LM352/3
LESHAN RADIO COMPANY, LTD.
L2SA1037AK*LT1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T
A
= 100C
25C
40C
50
20
10
50
2
1
0.5
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
T
A
= 25C
10
8
6
4
2
0
I
C
, COLLECT
OR CURRENT
(mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
V
CE
= 10 V
V
BE
,
BASE TO EMITTER VOLTAGE(V)
I
C
, COLLECT
OR CURRENT
(mA)
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
35.0
31.5
28.0
24.5
21.0
17.5
14.0
10.5
7.0
3.5
A
I
B
=0
0
1
2
3
4
5
T
A
= 25C
100
80
60
40
20
0
I
C
, COLLECT
OR CURRENT
(mA)
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
250
200
150
500
450
400
350
300
100
50
A
I
B
=0
T
A
= 25C
500
200
100
50
h
FE
, DC CURRENT GAIN
V
CE
= 5 V
3V
1V
I
C
, COLLECTOR CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 100C
500
200
100
50
h
FE
, DC CURRENT GAIN
V
CE
= 6V
I
C
, COLLECTOR CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
25C
40C
1
0.5
0.2
0.1
0.05
V
CE(sat)
, COLLECT
OR SA
TURA
TION VOL
T
AGE(V)
I
C
, COLLECTOR CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 25C
I
C
/I
B
= 50
20
10
LM353/3
LESHAN RADIO COMPANY, LTD.
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
1
0.5
0.2
0.1
0.05
V
CE(sat
)
, COLLEC
T
OR S
A
TUR
A
TION VO
L
T
AGE(V)
I
C
, COLLECTOR CURRENT
(mA)
0.2 0.5 1 2 5 10 20 50 100
T
A
= 100C
25C
40C
I
C
/I
B
= 10
L2SA1037AK*LT1
Fig.8 Gain bandwidth product vs. emitter current
1000
500
200
100
50
f
r
, TRANSITION FREQUENCY(MHz)
I
E
, EMITTER CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 25C
V
CE
= 12V
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
10
5
2
C
ob
, COLLECT
OR OUTPUT
C
A
P
ACIT
ANCE( pF)
C
ib
, EMITTER INPUT
CAP
ACIT
ANCE (pF)
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
0.5
1
2
5
10
20
T
A
= 25C
f =1MHz
I
E
= 0A
I
C
= 0A
C
ib
C
ob