ChipFind - документация

Электронный компонент: L2SA1576AT1

Скачать:  PDF   ZIP
L2SA1576A*T11/4
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
50
V
CollectorBase Voltage
V
CBO
60
V
EmitterBase Voltage
V
EBO
6.0
V
Collector Current -- Continuous
I
C
150
mAdc
Collector power dissipation
P
C
0.2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ~+150
C
DEVICE MARKING
L2SA1576AQT1 =FQ L2SA1576ART1 =FR L2SA1576AST1 =FS
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
CollectorEmitter Breakdown Voltage
V
(BR)CEO
50
--
--
V
(I
C
= 1 mA)
EmitterBase Breakdown Voltage
V
(BR)EBO
6
--
--
V
(I
E
= 50
A)
CollectorBase Breakdown Voltage
V
(BR)CBO
60
--
--
V
(I
C
= 50
A)
Collector Cutoff Current
I
CBO
--
--
0.1
A
(V
CB
= 60 V)
Emitter cutoff current
I
EBO
--
--
0.1
A
(V
EB
= 6 V)
Collector-emitter saturation voltage
V
CE(sat)
--
--
-0.5
V
(I
C
/ I
B
= 50 mA / 5m A)
DC current transfer ratio
h
FE
120
560
(V
CE
= 6 V, I
C
= 1mA)
Transition frequency
f
T
--
140
MHz
(V
CE
= 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
C
ob
--
4.0
5.0
pF
(V
CB
= 12 V, I
E
= 0A, f =1MHz )
h
FE
values are classified as follows:
Q
R
S
hFE
120~270
180~390
270~560
1
3
2
SC-70/SOT 323
2
EMITTER
3
COLLECTOR
1
BASE
*
L2SA1576A*T1
L2SA1576A*T12/4
LESHAN RADIO COMPANY, LTD.
L2SA1576A*T1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T
A
= 100C
25C
40C
50
20
10
50
2
1
0.5
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
T
A
= 25C
10
8
6
4
2
0
I
C
, COLLECT
OR CURRENT

(mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
V
CE
= 10 V
V
BE
, BASE TO EMITTER VOLTAGE(V)
I
C
, COLLECT
OR CURRENT

(mA)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
35.0
31.5
28.0
24.5
21.0
17.5
14.0
10.5
7.0
3.5
A
I
B
=0
0
1
2
3
4
5
T
A
= 25C
100
80
60
40
20
0
I
C
, COLLECT
OR CURRENT

(mA)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
250
200
150
500
450
400
350
300
100
50
A
I
B
=0
T
A
= 25C
500
200
100
50
h
FE
, DC CURRENT GAIN
V
CE
= 5 V
3V
1V
I
C
, COLLECTOR CURRENT (mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 100C
500
200
100
50
h
FE
, DC CURRENT GAIN
V
CE
= 6V
I
C
, COLLECTOR CURRENT (mA)
0.2
0.5
1
2
5
10
20
50
100
25C
40C
1
0.5
0.2
0.1
0.05
V
CE(sat)
, COLLECT
OR SA
TURA
TION VOL
T
AGE(V)
I
C
, COLLECTOR CURRENT (mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 25C
I
C
/I
B
= 50
20
10
L2SA1576A*T13/4
LESHAN RADIO COMPANY, LTD.
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
1
0.5
0.2
0.1
0.05
V
CE(sat)
, COLLECT
OR SA
TURA
TION VOL
T
AGE(V)
I
C
, COLLECTOR CURRENT (mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 100C
25C
40C
I
C
/I
B
= 10
L2SA1576A*T1
Fig.8 Gain bandwidth product vs. emitter current
1000
500
200
100
50
f
r
, TRANSITION FREQUENCY(MHz)
I
E
, EMITTER CURRENT (mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 25C
V
CE
= 12V
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
10
5
2
C
ob
, COLLECT
OR OUTPUT
CAP
ACIT
ANCE( pF)
C
ib
, EMITTER INPUT
CAP
ACIT
ANCE (pF)
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
0.5
1
2
5
10
20
T
A
= 25C
f =1MHz
I
E
= 0A
I
C
= 0A
C
ib
C
ob
L2SA1576A*T1-4/4
L2SA1576A*T1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.071
0.087
1.80
2.20
B
0.045
0.053
1.15
1.35
C
0.032
0.040
0.80
1.00
D
0.012
0.016
0.30
0.40
G
0.047
0.055
1.20
1.40
H
0.000
0.004
0.00
0.10
J
0.004
0.010
0.10
0.25
K
0.017REF
0.425REF
L
0.026BSC
0.650BSC
N
0.028REF
0.700REF
S
0.079
0.095
2.00
2.40
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SC-70/SOT-323
C
N
A
L
D
G
S
B
H
J
K
3
1
2
0.05 (0.002)
0.7
1.9
0.028
0.65
0.025
0.65
0.025
inches
mm
0.075
0.035
0.9
LESHAN RADIO COMPANY, LTD.