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Электронный компонент: L2SA812SLT1

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General Purpose Transistors
MAXIMUM RATINGS
Symbol
L
2SA812
Unit
Collector-Emitter Voltage
V
CEO
-50
V
Collector-Base Voltage
V
CBO
-60
V
Emitter-Base Voltage
V
EBO
-6
V
Collector current-continuoun
I
C
-150
mAdc
THERMAL CHARATEERISTICS
Symbol
Max
Unit
Total Device Dissipation FR-5 Board, (1)
P
D
200
mW
1.8
mW/
o
C
Thermal Resistance, Junction to Ambient
R
JA
556
o
C
/
W
P
D
200
mW
2.4
mW/
o
C
Thermal Resistance, Junction to Ambient
R
JA
417
o
C
/
W
Junction and Storage Temperature
Tj ,Tstg
-55 to +150
o
C
Total Device Dissipation
Derate above 25
o
C
Rating
T
A
=25
o
C
Derate above 25
o
C
Alumina Substrate, (2) T
A
=25
o
C
Characteristic
L2SA812-1/5
LESHAN RADIO COMPANY, LTD.
1
3
2
L2SA812*LT1
SOT-23
2
EMITTER
3
COLLECTOR
1
BASE
FEATURE
High Voltage: V
CEO
= -50 V.
Epitaxial planar type.
NPN complement: L2SC1623
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
L2SA812QLT1
M8
L2SA812QLT1G
M8
(Pb-Free)
L2SA812RLT1
M6
L2SA812RLT1G
M6
(Pb-Free)
L2SA812SLT1
M7
L2SA812SLT1G
M7
(Pb-Free)
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
L2SA812-2/5
LESHAN RADIO COMPANY, LTD.
L2SA812*LT1
Characteristic Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
120
-
560
(I
C
=-1mA,V
CE
=-6.0V)
Collector-Emitter Saturation Voltage
(I
C
=-100mA,I
B
=-10mA)
V
CE(sat)
-
-0.18
-0.3
V
Base -Emitter On Voltage
I
E
=-1.0mA,V
CE
=-6.0V)
V
BE
-0.58
-0.62
-0.68
V
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
F
t
-
180
-
MHz
(V
CE
=-6.0V,I
E
=-10mA)
Output Capacitance(V
CE
= -10V, I
E
=0, f=1.0MHz)
C
obo
-
4.5
-
pF
h
FE
Values are classified as followes
NOTE:
*
Q
R
S
h
FE
120~270
180~390
270~560
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-50
-
-
V
(I
C
=-1mA)
Emitter-Base Breakdown Voltage
V
(BR)EBO
-6
-
-
V
(I
E
=-50
)
Collector-Base Breakdown Voltage
V
(BR)CBO
-60
-
-
V
(I
C
=-50
A)
Collector Cutoff Current
(V
CB
=-50V)
I
CBO
-
-
-0.1
A
Emitter Cutoff Current (V
BE
=-6V)
I
EBO
-0.1
A
L2SA812-3/5
LESHAN RADIO COMPANY, LTD.
L2SA812*LT1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T
A
= 100C
25C
40C
50
20
10
50
2
1
0.5
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
T
A
= 25C
10
8
6
4
2
0
I
C
, COLLECT
OR CURRENT
(mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
V
CE
= 10 V
V
BE
,
BASE TO EMITTER VOLTAGE(V)
I
C
, COLLECT
OR CURRENT
(mA)
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
35.0
31.5
28.0
24.5
21.0
17.5
14.0
10.5
7.0
3.5
A
I
B
=0
0
1
2
3
4
5
T
A
= 25C
100
80
60
40
20
0
I
C
, COLLECT
OR CURRENT
(mA)
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
250
200
150
500
450
400
350
300
100
50
A
I
B
=0
T
A
= 25C
500
200
100
50
h
FE
, DC CURRENT GAIN
V
CE
= 5 V
3V
1V
I
C
, COLLECTOR CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 100C
500
200
100
50
h
FE
, DC CURRENT GAIN
V
CE
= 6V
I
C
, COLLECTOR CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
25C
40C
1
0.5
0.2
0.1
0.05
V
CE(sat)
, COLLECT
OR SA
TURA
TION VOL
T
AGE(V)
I
C
, COLLECTOR CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 25C
I
C
/I
B
= 50
20
10
L2SA812-4/5
LESHAN RADIO COMPANY, LTD.
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
1
0.5
0.2
0.1
0.05
V
CE(sat
)
, COLLEC
T
OR S
A
TUR
A
TION VO
L
T
AGE(V)
I
C
, COLLECTOR CURRENT
(mA)
0.2 0.5 1 2 5 10 20 50 100
T
A
= 100C
25C
40C
I
C
/I
B
= 10
L2SA812*LT1
Fig.8 Gain bandwidth product vs. emitter current
1000
500
200
100
50
f
r
, TRANSITION FREQUENCY(MHz)
I
E
, EMITTER CURRENT
(mA)
0.2
0.5
1
2
5
10
20
50
100
T
A
= 25C
V
CE
= 12V
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
10
5
2
C
ob
, COLLECT
OR OUTPUT
C
A
P
ACIT
ANCE( pF)
C
ib
, EMITTER INPUT
CAP
ACIT
ANCE (pF)
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
0.5
1
2
5
10
20
T
A
= 25C
f =1MHz
I
E
= 0A
I
C
= 0A
C
ib
C
ob
LESHAN RADIO COMPANY, LTD.
D
J
K
L
A
C
B S
H
G
V
1
2
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.1102
0.1197
2.80
3.04
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.031
0.8
SOT-23
3
L2SA812-5/5
L2SA812*LT1