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Электронный компонент: L2SC2411KQLT1

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LESHAN RADIO COMPANY, LTD.
1
3
2
SOT 23 (TO236AB)
L2SC2411K*LT1
L2SC2411K*LT1-1/4
Medium Power Transistor
NPN silicon
FEATURE
Epitaxial planar type
Complementary to L2SA1036K
Pb-Free package is available
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SC2411KPLT1
CP
3000/Tape&Reel
L2SC2411KPLT1G
(Pb-Free)
CP
3000/Tape&Reel
L2SC2411KQLT1
CQ
3000/Tape&Reel
L2SC2411KQLT1G
(Pb-Free)
CQ
3000/Tape&Reel
L2SC2411KRLT1
CR
3000/Tape&Reel
L2SC2411KRLT1G
(Pb-Free)
CR
3000/Tape&Reel
MAXIMUM RATINGS (T
A
= 25
C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
V
CBO
40
V
Collector-emitter voltage
V
CEO
32
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
0.5
A*
Collector power dissipation
P
C
0.2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~+150
C
Collector-base breakdown voltage
BV
CBO
40
-
-
V
I
C
=100
A
Collector-emitter breakdown voltage
BV
CEO
32
-
-
V
I
C
=1mA
Emitter-base breakdown voltgae
BV
EBO
5
-
-
V
I
E
=100
A
Collector cutoff current
I
CBO
-
-
1
A
V
CB
=20V
Emitter cutoff current
I
EBO
-
-
1
A
V
EB
=4V
DC current transfer ratio
h
FE
82
-
390
-
V
CE
=3V
Collcetor-emitter saturation voltage
V
CE(sat)
-
-
0.4
V
I
C
/I
B
=500mA/50mA
Transition frequency
f
T
-
250
-
MHz
V
CE
=5V,I
E
=-20mA,f=100MHz
Output capacitance
C
ob
-
6.0
-
pF
V
CB
=10V,I
E
=0A,f=1MHz
*P
C
must not be exceeded.
ELECTRICAL CHARACTERISTICS(T
A
= 25
C
)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
h
FE
values are classified as follows:
Item
P
Q
R
h
FE
82~180
120~270 180~390
2
EMITTER
3
COLLECTOR
1
BASE
LESHAN RADIO COMPANY, LTD.
L2SC2411K*LT1-2/4
L2SC2411K*LT1
Electrical characteristic curves(T
A
= 25
C)
0.8
0.2
0.4
0.9
0.7
0.5
1.1
0.3
1.0
0.6
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
Ta=100
O
C
25
O
C
80
O
C
25
O
C
55
O
C
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation characteristics
COLLECTOR CURRENT : I
C
(mA)
1
0
2
3
4
5
0
100
50
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
B
= 0A
Ta =
25
O
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output characteristics(
I
)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
1
0
2
3
4
5
0
500
400
300
200
100
2mA
1.8mA
1.6mA
1.4mA
1.2mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
I
B
= 0A
Ta = 25
O
C
Fig.3 Grounded emitter output characteristics(
II
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.5
1
2
5
1 0
2 0
5 0
100
1000
200
500
0.2
0.5
1
0.02
0.05
0.1
= 25
O
C
Ta
l
C
/l
B
= 10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V
)
Fig.4 Collector-emitter saturation voltage vs. collector current
LESHAN RADIO COMPANY, LTD.
L2SC2411K*LT1-3/4
L2SC2411K*LT1
Electrical characteristic curves(T
A
= 25
C)
500 1000
0.1
200
10
0.2
50
100
0.5
20
1
2
5
20
10
50
100
200
500
1000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Ta = 100
O
C
75
O
C
50
O
C
25
O
C
0
O
C
25
O
C
50
O
C
V
CE
=
3V
Fig.5 DC current gain vs. collector current
Fig.6 Gain bandwidth product vs. emitter current
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Ta = 25
O
C
V
CE
= 5V
0.5
1
2
5
10
20
50
50
100
200
500
0.5
1
2
5
1 0
2 0
5 0
5
2
10
20
50
Cib
Cob
Ta = 25
O
C
f= 1MHz
I
E
=0A
I
C
= 0A
COLLECTOR TO BASE VOLTAGE : V
CE
(V)
EMITTER TO BASE VOLTAGE: V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
LESHAN RADIO COMPANY, LTD.
L2SC2411K*LT1-4/4
D
J
K
L
A
C
B S
H
G
V
1
2
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.1102
0.1197
2.80
3.04
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
0.031
0.8
SOT-23
3
L2SC2411K*LT1