LESHAN RADIO COMPANY, LTD.
L2SC3837DW1T1 1/2
High-Frequency Amplifier
Transistor
Features
1.High transition frequency.(f
T
=1.5GHz)
2.Low output capacitance.(Cob=0.95pF)
L2SC3837DW1T1
MAXIMUM RATINGS (T
A
= 25
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
18
V
Emitter-base voltage
V
EBO
3
V
Collector Current
I
C
50
mA
Collector power dissipation
P
C
150(TOTAL)
mW*
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~+150
C
ELECTRICAL CHARACTERISTICS(T
A
= 25
C)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
Collector-base breakdown voltage
BV
CBO
30
-
-
V
I
C
=10
A
Collector-emitter breakdown voltage
BV
CEO
18
-
-
V
I
C
=1mA
Emitter-base breakdown voltage
BV
EBO
3
-
-
V
I
E
=10
A
Collector cutoff current
I
CBO
-
-
0.5
A
V
CB
=10V
Emitter cutoff current
I
EBO
-
-
0.5
A
V
EB
= 2 V
DC current transfer ratio
h
FE
27
-
270
-
V
CE
/I
C
=10V/10mA
Collector-emitter saturation voltage
V
CE(sat)
-
-
0.5
V
I
C
/I
B
=20mA/4mA
h
FE
pairing
h
FE1
/h
FE2
0.5
1
2
-
V
CE
/I
C
=10V/10mA
Transition frequency
fT
600
1500
-
MHz
V
CE
/I
C
=10V/10mA,f=200MHz*
Output capacitance
Cob
-
0.95
1.6
pF
V
CB
/f=10V1MHz,I
E
=0A
*Transition frequency of the device.
*
120mW per element must not be exceeded.
DEVICE MARKING
L2SC3837DW1T1=8P
1
2
3
4
5
6
SC-88/SOT-363
(3) (2) (1)
(4) (5) (6)
Q1
Q2
LESHAN RADIO COMPANY, LTD.
L2SC3837DW1T1 2/2
L2SC3837DW1T1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.071
0.087
1.80
2.20
B
0.045
0.053
1.15
1.35
C
0.031
0.043
0.80
1.10
D
0.004
0.012
0.10
0.30
G
0.026 BSC
0.65 BSC
H
---
0.004
---
0.10
J
0.004
0.010
0.10
0.25
K
0.004
0.012
0.10
0.30
N
0.008 REF
0.20 REF
S
0.079
0.087
2.00
2.20
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4.EMITTER 1
5. BASE 1
6.COLLECTOR 2
B
0.2 (0.008)
A
G
S
H
C
N
J
K
D
6 P L
6 5 4
1 2 3
- B -
M M
0.5 mm (min)
0.4 mm (min)
0.65 mm
0.65 mm
1.9 mm
SC-88/SOT-363
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