MAXIMUM RATINGS
Symbol
Ratings
Unit
Collector-Emitter Voltage
V
CEO
-50
V
Collector-Base Voltage
V
CBO
-60
V
Emitter-Base Voltage
V
EBO
-6
V
Collector current-continuoun
IC
-150
mAdc
THERMAL CHARATEERISTICS
Symbol
Max
Unit
Total Device Dissipation FR-5 Board, (1)
P
D
380
mW
Thermal Resistance, Junction to Ambient
R
JA
328
o
C
/
W
Junction and Storage Temperature
Tj ,Tstg
-55 to +150
o
C
DEVICE MARKING
L4401DW1T1=5K
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
-50
-
-
V
(IC=-1mA)
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
-
-
V
(IE=-50 A)
Collector-Base Breakdown Voltage
V(BR)CBO
-60
-
-
V
(IC=-50 A)
Characteristic
Parameter
T
A
=25
o
C
Characteristic
L4401DW1T1
SC88
Silicon PNP Epitaxial Planer
Transistor
LESHAN RADIO COMPANY, LTD.
L4401DW1T1
-
1/
2
Collector Cutoff Current
(VCB=-60V)
ICBO
-
-
-0.1
A
Emitter Cutoff Current (VBE=-6V)
IEBO
-0.1
A
ON CHARACTERISTICS
DC Current Gain Hfe 120
-
560
(IC=-1mA, VCE=-6.0V)
Collector-Emitter Saturation Voltage
(IC=-50mA,IB=-5mA)
VCE(SAT)
-
-
-0.5
V
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
Ft
-
140
-
MHz
(VCE = -12.0V; IE =2.0 mA,f=300MHZ)
Output Capacitance(VCB=-12V,f=1.0MHz)
Cobo
-
4
5
Pf
LESHAN RADIO COMPANY, LTD.
L4401DW1T1
-
2
/
2
PACKAGE DIMENSIONS
SC-88
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.071
0.087
1.80
2.20
B
0.045
0.053
1.15
1.35
C
0.031
0.043
0.80
1.10
D
0.004
0.012
0.10
0.30
G
0.026BSC
0.65BSC
H
0.004
0.10
J
0.004
0.010
0.10
0.25
K
0.004
0.012
0.10
0.30
N
0.008 REF
0.20 REF
S
0.079
0.087
2.00
2.20
V
0.012
0.016
0.30
0.40
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