LESHAN RADIO COMPANY, LTD.
LBAS70 1/4
SCHOTTKY BARRIER (DOUBLE)
DIODE
LBAS70*LT1
Features
Low forward current
High breakdown voltage
Guard ring protected
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes with an integrated guard ring for
stress protection.Single diodes and double diodes with different
pinning are available.
SOT- 23
1
2
3
BAS70-05 single diode.
BAS70-06 single diode.
1
Anode
2
Anode
1
Anode
3
Cathode
BAS70 single diode.
BAS70-04 single diode.
3
Cathode
1
Anode
2
Cathode
3
Cathode/Anode
1
Cathode
2
Cathode
3
Anode
LESHAN RADIO COMPANY, LTD.
LBAS70 2/4
MAXIMUM RATINGS (T
A
= 25
C)
Parameter
Symbol
Min.
Max.
Unit
Conditions
Continuous reverse voltage
V
R
-
70
V
Continuous forward current
I
F
-
70
mA
Repetitive Peak forward surge current
I
FSM
-
70
mA
t
p
<1s;
<0.5
Non-repetitive peak forward current
I
FSM
-
100
mA
t
p
<10ms
Storage temperature
T
stg
-65
+150
C
Junction temperature
T
j
-
150
C
Operating ambient temperature
T
amb
-65
+150
C
DEVICE MARKING
LBAS70LT1=BE LBAS70-04LT1=CG LBAS70-05LT1=EH LBAS70-06LT1=GK
ELECTRICAL CHARACTERISTICS(T
A
= 25
C
)
Parameter
Symbol
Max.
Unit
Conditions
Forward voltage(Fig.3)
V
F
410
mV
I
F
=1mA
750
mv
I
F
=10mA
1
v
I
F
=15mA
Reverse current(Fig.4
;
note1)
I
R
100
n
V
R
=50V
10
A
V
R
=70V
Charge carrier life time
(krakauer method)
100
ps
I
F
=5mA
Diode capacitance(Fig.6)
C
d
2
pF
f=1MHz;V
R
=0
Note:
1. Pulse test:t
p
=300
s;
=0.02.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS
Thermal resistance from junction to ambient
R
th j-a
500
k/w
note1
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
LBAS70 Series
LESHAN RADIO COMPANY, LTD.
LBAS70 3/4
LBAS70 Series
Electrical characteristic curves(T
A
= 25
C)
10
2
10
1
10-
1
10
-2
0 0.2 0.4 0.6 0.8 1.0
Tamb=125
O
C
Tamb=-40
O
C
Fig.1 Forward current as a function of
forward voltage; typical values.
FOR
W
ARD V
O
L
T
A
G
E:
I F
(mA)
FOR
W
ARD V
O
L
T
A
G
E:
r diff
(
)
FOR
W
ARD V
O
L
T
A
G
E:
C
d
(pF)
FOR
W
ARD
V
O
L
T
A
G
E:
I
R
(
A)
FORWARD VOLTAGE: V
F
(V)
FORWARD VOLTAGE: I
F
(mA)
FORWARD VOLTAGE: V
R
(V)
FORWARD VOLTAGE: V
R
(V)
10
2
10
1
10-
1
10
-2
10-3
0 20 40 60 80
Fig.2 Reverse current as a function of
reverse voltage; typical values.
2
1.5
1
0.5
0
0 20 40 60 80
Fig.4 Diode capacitance as a function of reverse
voltage;typical values.
10
3
10
2
10
1
10
-1
1 10 10
2
Fig.3 Differential forward resistance as a function
of forward current;typical values.
Tamb=25
O
C
Tamb=85
O
C
Tamb=125
O
C
f=10KHz
f=1MHz Tamb=25
O
C
Tamb=85
O
C
Tamb=25
O
C
LESHAN RADIO COMPANY, LTD.
LBAS70 4/4
LBAS70 Series
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.1102
0.1197
2.80
3.04
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
SOT-23
D
J
K
L
A
C
B S
H
G
V
1
2
3
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
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