LESHAN RADIO COMPANY, LTD.
LBAV99WT1 LBAV99RWT11/3
DEVICE MARKING
LBAV99WT1 = A7; LBAV99RWT1 = F7
MAXIMUM RATINGS
(Each Diode)
Rating Symbol Value Unit
Reverse Voltag
V
R
70
Vdc
Forward Current
I
F
215
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
V
RRM
70
V
Average Rectified Forward
I
F(AV)
715
mA
Current (Note 1.)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
I
FRM
450
mA
NonRepetitive Peak Forward Current
I
FSM
A
t = 1.0
s
2.0
t = 1.0 ms
1.0
t = 1.0 S
0.5
1. FR5 = 1.0
0.75
0.062 in.
Dual Serise
Switching Diodes
1
3
2
LBAV99WT1
LBAV99RWT1
LBAV99WT1
SOT-323 (SC-70)
LBAV99RWT1
SOT-323 (SC-70)
3
CATHODE/ANODE
ANODE
1
CATHODE
2
LBAV99WT1
3
CATHODE/ANODE
CATHODE
1
ANODE
2
LBAV99RWT1
LBAV99WT1 SOT323(SC70) 3000/Tape & Reel
LBAV99RWT1 SOT323(SC70) 3000/Tape & Reel
LBAV99WT1G SOT323(SC70) 3000/Tape & Reel
LBAV99RWT1G SOT323(SC70) 3000/Tape & Reel
Device Package Shipping
Pb-Free Package May be Available. The G-Suffix Denotes a
Pb-Free Lead Finish
ORDERING INFORMATION
The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1.
Suggested Applications
ESD Protection
Polarity Reversal Protection
Data Line Protection
Inductive Load Protection
Steering Logic
Features
LESHAN RADIO COMPANY, LTD.
LBAV99WT1 LBAV99RWT12/3
LBAV99WT1 LBAV99RWT1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
D
200
mW
FR5 Board, (Note 1.) T
A
= 25C
Derate above 25C
1.6
mW/C
Thermal Resistance Junction to Ambient
R
JA
625
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (Note 2.) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
,T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
A)
V
(BR)
70
Vdc
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
I
R
2.5
Adc
(V
R
= 25 Vdc, T
J
= 150C)
30
(V
R
= 70 Vdc, T
J
= 150C)
50
Diode Capacitance
C
D
1.5
pF
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
V
F
715
mVdc
(I
F
= 10 mAdc)
855
(I
F
= 50 mAdc)
1000
(I
F
= 150 mAdc)
1250
Reverse Recovery Time
R
L
= 100
t
rr
6.0
ns
(I
F
=I
R
=10 mAdc, i
R(REC)
=1.0mAdc) (Figure 1)
Forward Recovery Voltage (I
F
= 10 mA, t
r
= 20 ns)
V
FR
1.75
V
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F
) of 10mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10mA.
Notes:
3. t
p
t
rr
Figure 1. Recovery Time Equivalent Test Circuit
+10 V
2.0 k
820
100
H
0.1
F
D.U.T.
0.1
F
50
OUTPUT
PULSE
GENERATOR
t
r
50
INPUT
SAMPLING
OSCILLOSCOPE
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
INPUT SIGNAL
I
F
V
R
LESHAN RADIO COMPANY, LTD.
LBAV99WT1 LBAV99RWT13/3
100
10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
10
1.0
0.1
0.01
0.001
0
2
4
6
8
0.68
0.64
0.60
0.56
0.52
I
F
, FORW
ARD CURRENT (mA)
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
I
R
, REVERSE CURRENT (
A)
C
D
DIODE CAP
ACIT
ANCE (pF)
LBAV99WT1 LBAV99RWT1
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