LBSS123LT11/4
LESHAN RADIO COMPANY, LTD.
1
3
SOT-23
2
LBSS123LT1
3
1
2
Gate
Source
Drain
N-CHANNEL POWER MOSFET
LBSS123LT1
FEATURE
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS123LT1
SA
3000/Tape&Reel
LBSS123LT1G
SA
(Pb-Free)
3000/Tape&Reel
LBSS123LT3
SA
10000/Tape&Reel
LBSS123LT3G
SA
(Pb-Free)
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
GateSource Voltage
Continuous
Nonrepetitive (tp
50
s)
VGS
VGSM
20
40
Vdc
Vpk
Drain Current
Continuous (Note 1.)
Pulsed (Note 2.)
ID
IDM
0.17
0.68
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5
Board (Note 3.)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance, Junction to
Ambient
R
q
JA
556
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
3. FR5 = 1.0
0.75
0.062 in.
LESHAN RADIO COMPANY, LTD.
LBSS123LT12/4
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 250
Adc)
V(BR)DSS
100
Vdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25
C
TJ = 125
C
IDSS
15
60
Adc
GateBody Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
50
nAdc
ON CHARACTERISTICS
(Note 4.)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
2.8
Vdc
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
5.0
6.0
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
gfs
80
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
20
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
9.0
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
4.0
pF
SWITCHING CHARACTERISTICS(4)
TurnOn Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
td(on)
20
ns
TurnOff Delay Time
(VCC 30 Vdc, IC 0.28 Adc,
VGS = 10 Vdc, RGS = 50
)
td(off)
40
ns
REVERSE DIODE
Diode Forward OnVoltage
(ID = 0.34 Adc, VGS = 0 Vdc)
VSD
1.3
V
4. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
LBSS123LT1
LESHAN RADIO COMPANY, LTD.
LBSS123LT13/4
TYPICAL ELECTRICAL CHARACTERISTICS
I D
, DRAIN CURRENT
(AMPS)
r DS(on)
, ST
A
TIC DRAIN-SOURCE ON-RESIST
ANCE
(NORMALIZED)
V GS(th)
,
THRESHOLD VOL
T
AGE (NORMALIZED)
I D
, DRAIN CURRENT
(AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VDS, DRAN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
10
0
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
+20
+60
+100
+140
-60
-20
+20
+60
+100
+140
T, TEMPERATURE (C)
Figure 3. Temperature versus Static
DrainSource OnResistance
T, TEMPERATURE (C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V
-55C
25C
125C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
LBSS123LT1
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