LESHAN RADIO COMPANY, LTD.
LDTC114EM3T5G_S-1/10
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
With Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
which is designed for low power surface mount applications.
LDTC114EM3T5G
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
C
Derate above 25
C
P
D
260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
mW
Thermal Resistance
Junction-to-Ambient
R
JA
480 (Note 1)
205 (Note 2)
C/W
Storage Temperature Range
T
stg
55 to +150
C
xx
= Specific Device Code
M
= Date Code
MARKING
DIAGRAM
3
2
1
XX M
mW/
C
Simplifies Circuit Design
Reduces Component Count
The SOT-723 Package can be Soldered using Wave or Reflow.
Available in 4 mm, 8000 Unit Tape & Reel
These are Pb-Free Devices.
Reduces Board Space
Version 1.0
Series
SOT-723
1
2
3
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
C
T
J
150
Junction Temperature
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
LESHAN RADIO COMPANY, LTD.
LDTC114EM3T5G_S-2/10
LDTC114EM3T5G Series
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Package
Shipping
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
8A
8B
8C
8D
94
8F
8H
8J
8K
8L
8M
8N
8P
8T
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
47
10
22
47
47
2.2
4.7
47
47
47
100
22
SOT-723
(Pb-Free)
8000/Tape & Reel
Version 1.0
LESHAN RADIO COMPANY, LTD.
LDTC114EM3T5G_S-3/10
LDTC114EM3T5G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
-
-
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
-
-
500
nAdc
Emitter-Base Cutoff Current
LDTC114EM3T5G
(V
EB
= 6.0 V, I
C
= 0)
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
m
A, I
E
= 0)
V
(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
-
-
Vdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
LDTC114EM3T5G
(V
CE
= 10 V, I
C
= 5.0 mA)
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
h
FE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
160
60
100
140
140
350
350
15
30
200
150
140
150
140
350
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA)
LDTC123EM3T5G
(I
C
= 10 mA, I
B
= 1 mA)
LDTC143TM3T5G/LDTC114TM3T5G/
LDTC143EM3T5G/LDTC143ZM3T5G/
LDTC124XM3T5G/LDTC144TM3T5G
V
CE(sat)
-
-
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
W
)
LDTC114EM3T5G
LDTC124EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
W
)
LDTC144EM3T5G
LDTC144TM3T5G
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k
W
)
LDTC115EM3T5G
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k
W
)
LDTC144WM3T5G
V
OL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
3. Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%.
Version 1.0
LESHAN RADIO COMPANY, LTD.
LDTC114EM3T5G_S-4/10
LDTC114EM3T5G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 4)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
W
)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
W
)
LDTC143TM3T5G
LDTC143ZM3T5G
LDTC114TM3T5G
LDTC144TM3T5G
V
OH
4.9
-
-
Vdc
Input Resistor
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
61.1
k
W
Resistor Ratio
LDTC114EM3T5G/LDTC124EM3T5G/
LDTC144EM3T5G/LDTC115EM3T5G
LDTC114YM3T5G
LDTC143TM3T5G/LDTC114TM3T5G/LDTC144TM3T5G
LDTC123EM3T5G/LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC144WM3T5G
R
1
/R
2
0.8
0.17
-
0.8
0.055
0.38
0.038
1.7
1.0
0.21
-
1.0
0.1
0.47
0.047
2.1
1.2
0.25
-
1.2
0.185
0.56
0.056
2.6
4. Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%.
Figure 1. Derating Curve
250
200
150
100
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (C)
P D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
R
q
JA
= 480
C/W
300
Version 1.0
LESHAN RADIO COMPANY, LTD.
LDTC114EM3T5G_S-5/10
LDTC114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS - LDTC114EM3T5G
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
10
0
20
30
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
T
A
= -25C
75C
25C
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001
0
20
40
50
I
C
, COLLECTOR CURRENT (mA)
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75C
25C
-25C
T
A
= -25C
25C
Figure 5. Output Current versus Input Voltage
75C
25C
T
A
= -25C
100
10
1
0.1
0.01
0.001
0
1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 6. Input Voltage versus Output Current
50
0
10
20
30
40
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
75C
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
Version 1.0
PDF 
ZIP