LMBF170LT11/4
LESHAN RADIO COMPANY, LTD.
1
3
SOT-23
2
3
1
2
Gate
Source
Drain
LMBF170LT1
N-CHANNEL POWER MOSFET
LMBF170LT1
FEATURE
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBF170LT1
6Z
3000/Tape&Reel
LMBF170LT1G
6Z
(Pb-Free)
3000/Tape&Reel
LMBF170LT3
6Z
10000/Tape&Reel
LMBF170LT3G
6Z
(Pb-Free)
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage
VDGS
60
Vdc
GateSource Voltage
Continuous
Nonrepetitive (tp
50
m
s)
VGS
VGSM
20
40
Vdc
Vpk
Drain Current Continuous
Pulsed
ID
IDM
0.5
0.8
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1.) TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
556
C/W
Junction and Storage Temperature
TJ, Tstg
55 to
+150
C
1. FR5 = 1.0
0.75
0.062 in.
LESHAN RADIO COMPANY, LTD.
LMBF170LT12/4
ELECTRICAL CHARACTERISTICS
(Ta = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 100
m
A)
V(BR)DSS
60
Vdc
GateBody Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0)
IGSS
10
nAdc
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
VGS(th)
0.8
3.0
Vdc
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 200 mA)
rDS(on)
5.0
W
OnState Drain Current (VDS = 25 Vdc, VGS = 0)
ID(off)
0.5
m
A
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
Ciss
60
pF
SWITCHING CHARACTERISTICS
(Note 2.)
TurnOn Delay Time
(VDD = 25 Vdc, ID = 500 mA, Rgen = 50
W
)
td(on)
10
ns
TurnOff Delay Time
(VDD 25 Vdc, ID 500 mA, Rgen 50
W
)
Figure 1
td(off)
10
2. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
20 dB 50 W
ATTENUATOR
PULSE
GENERATOR
50 W
50 W
1 MW
Vout
125 W
+25 V
40 pF
Vin
TO SAMPLING
SCOPE
50 W INPUT
PULSE WIDTH
50%
90%
50%
10%
10%
90%
90%
Vin
OUTPUT
INVERTED
INPUT
(Vin AMPLITUDE 10 VOLTS)
Vout
toff
tf
td(off)
ton
td(on)
tr
LMBF170LT1
LESHAN RADIO COMPANY, LTD.
LMBF170LT13/4
TYPICAL ELECTRICAL CHARACTERISTICS
I D
, DRAIN CURRENT
(AMPS)
r DS(on)
, ST
A
TIC DRAIN-SOURCE ON-RESIST
ANCE
(NORMALIZED)
V GS(th)
,
THRESHOLD VOL
T
AGE (NORMALIZED)
I D
, DRAIN CURRENT
(AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 3. Ohmic Region
1.0
0.8
0.6
0.4
0.2
10
0
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
+20
+60
+100
+140
-60
-20
+20
+60
+100
+140
T, TEMPERATURE (C)
Figure 5. Temperature versus Static
DrainSource OnResistance
T, TEMPERATURE (C)
Figure 6. Temperature versus Gate
Threshold Voltage
TA = 25C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V
-55C
25C
125C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
LMBF170LT1
LESHAN RADIO COMPANY, LTD.
D
J
K
L
A
C
B S
H
G
V
1
2
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.1102
0.1197
2.80
3.04
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
PIN 1. Gate
2. Source
3. Drain
0.031
0.8
SOT-23
3
LMBF170LT1
LMBF170LT1-4/4
PDF 
ZIP