LESHAN RADIO COMPANY, LTD.
M171/6
1
3
2
LMBT5087LT1
SOT 23 (TO236AB)
Low Noise Transistor
PNP Silicon
2
EMITTER
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
50
Vdc
CollectorBase Voltage
V
CBO
50
Vdc
EmitterBase Voltage
V
EBO
3.0
Vdc
Collector Current -- Continuous
I
C
50
mAdc
DEVICE MARKING
LMBT5087LT1=2Q
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation RF-5 Board (1)
P
D
225
mW
T
A
=25 C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
ELECTRICAL CHARACTERISTICS
(T
A
= 2
5
C unless otherwise noted)
Characteristic
Symbol
Min
M a x
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
V
(BR)CEO
50
--
Vdc
(I
C
= 1.0 mAdc, I
B
= 0)
CollectorBase Breakdown Voltage
V
(BR)CBO
50
--
Vdc
(I
C
= 100
Adc, I
E
= 0)
Collector Cutoff Current
I
CBO
n Adc
(V
CB
= 10 Vdc, I
E
= 0)
--
10
(V
CB
= 35 Vdc, I
E
= 0)
--
50
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Pb-Free Package May be Available. The G-Suffix Denotes a
Pb-Free Lead Finish
Device Package Shipping
LMBT5087LT1 SOT23 3000/Tape & Reel
LMBT5087LT1G SOT23 3000/Tape & Reel
LESHAN RADIO COMPANY, LTD.
M172/6
LMBT5087LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
M a x
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
(I
C
= 100
Adc, V
CE
= 5.0 Vdc)
250
800
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
250
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
250
CollectorEmitter Saturation Voltage
V
CE(sat)
0.3
Vdc
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
BaseEmitter Saturation Voltage
V
BE(sat)
0.85
Vdc
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
f
T
40
--
MHz
(I
C
= 500
Adc, V
CE
= 5.0 Vdc, f = 20 MHz)
Output Capacitance
C
obo
--
4.0
pF
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
SmallSignal Current Gain
h
fe
250
900
--
(I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0 kHz)
Noise Figure
N F
dB
(I
C
= 20 mAdc, V
CE
= 5.0 Vdc,R
s
=10k
, f = 1.0 kHz)
--
2.0
(I
C
= 100
Adc, V
CE
= 5.0 Vdc,R
s
=3.0k
, f = 1.0 kHz)
--
2.0
LESHAN RADIO COMPANY, LTD.
M173/6
Noise Figure is Defined as:
NF = 20 log
10
(
)
1/ 2
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K
= Boltzman's Constant (1.38 x 10
23
j/K)
T
= Temperature of the Source Resistance (K)
R
s
= Source Resistance (
)
e
n
2
+ 4KTR
S
+ I
n
2
R
S
2
4KTR
S
LMBT5087LT1
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25C)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
Figure 2. Noise Current
I
C
, COLLECTOR CURRENT (
A)
Figure 3. Narrow Band, 100 Hz
I
C
, COLLECTOR CURRENT (
A)
Figure 5. Wideband
I
C
, COLLECTOR CURRENT (
A)
Figure 4. Narrow Band, 1.0 kHz
e
n
, NOISE VOL
T
AGE (nV)
BANDWIDTH = 1.0 Hz
R
S
0
I
C
=10
A
100
A
30
A
300
A
1.0mA
I
n
, NOISE CURRENT (pA)
BANDWIDTH = 1.0 Hz
R
S
I
C
=1.0mA
300
A
100
A
30
A
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25C)
R
S
, SOURCE RESIST
ANCE (
)
R
S
, SOURCE RESIST
ANCE (
)
R
S
, SOURCE RESIST
ANCE (
)
10
7.0
5.0
3.0
2.0
1.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
10.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
200
300
500
700 1.0K
10
20
30
50
70
100
200
300
500
700 1.0K
10
20
30
50
70
100
200
300
500
700 1.0K
0.5 dB
1.0 dB
2.0dB
3.0 dB
1.0dB
2.0 dB
3.0 dB
5.0 dB
0.5dB
1.0dB
2.0dB
3.0 dB
5.0 dB
10 Hz to 15.7kHz
10
A
0.5 dB
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
5.0 dB
~
~
~
~
8
LESHAN RADIO COMPANY, LTD.
M174/6
TYPICAL STATIC CHARACTERISTICS
I
B
, BASE CURRENT (mA)
Figure 6. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 7. Collector Characteristics
I
C
, COLLECTOR CURRENT (mA)
Figure 10. "On" Voltages
I
C
, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
V
CE
,
COLLECT
OR
EMITTER
VOL
T
AGE
(VOL
TS)
V
, TEMPERA
TURE COEFFICIENTS (mV/C)
VB
for V
BE
VC
for V
CE(sat)
V
BE(on)
@ V
CE
= 1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
T
J
=25C
I
C
= 1.0 mA
50 mA
100 mA
10 mA
T
A
= 25C
*APPLIES for I
C
/ I
B
< h
FE
/ 2
T
A
= 25C
PULSE WIDTH =300
s
DUTY CYCLE<2.0%
I
B
= 400
A
150
A
200
A
250
A
350
A
55C to 25C
55C to 25C
25C to 125C
25C to 125C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
1.6
0.8
0
0.8
1.6
2.4
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
1.0
0.8
0.6
0.4
0.2
0
0.002 0.0050.01 0.02
0.05 0.1 0.2
0.5
1.0
2.0
5.0
10
20
100
80
60
40
20
0
0
5.0
10
15
20
25
30
35
40
100
A
50
A
300
A
LMBT5087LT1
LESHAN RADIO COMPANY, LTD.
M175/6
TYPICAL DYNAMIC CHARACTERISTICS
C, CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
Figure 11. TurnOff Time
I
C
, COLLECTOR CURRENT (mA)
Figure 12. CurrentGain -- Bandwidth Product
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 13. Capacitance
t, TIME (ns)
t, TIME (ns)
f
T
, CURRENT GAIN -- BANDWIDTH PRODUCT (MHz)
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25C
t
d
@ V
BE(off)
= 0.5 V
t
r
V
CC
= 3.0 V
I
C
/I
B
= 10
I
B1
=I
B2
T
J
= 25C
t
f
t
s
T
J
= 25C
5.0 V
C
ib
C
ob
T
J
= 25C
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
1000
700
500
300
200
100
70
50
30
20
10
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
500
300
200
100
70
50
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
10.0
7.0
5.0
3.0
2.0
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
V
CE
=20 V
t, TIME (ms)
Figure 14. Thermal Response
r ( t ) TRANSIENT THERMAL RESISTANCE(NORMALIZED)
D = 0.5
0.02
0.05
0.1
0.2
0.01
SINGLE PULSE
DUTY CYCLE, D = t
1
/ t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN569)
Z
JA(t)
= r(t) R
JA
T
J(pk)
T
A
= P
(pk)
Z
JA(t)
FIGURE 16
P
(pk)
t
2
t
1
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
20k
50k
100k
LMBT5087LT1
LESHAN RADIO COMPANY, LTD.
M176/6
T
J
, JUNCTION TEMPERATURE (C)
Figure 15. Typical Collector Leakage Current
V
CC
= 30 V
I
C
, COLLECTOR CURRENT (nA)
10
4
10
3
10
2
10
1
10
0
10
1
10
2
4
2
0
+20
+40
+60
+80
+100
+120
+140
+160
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 V
I
CEO
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 16. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 14 was calculated for various
duty cycles.
To find Z
JA(t)
, multiply the value obtained from Figure 14 by
the steady state value R
JA
.
Example:
Dissipating 2.0 watts peak under the following conditions:
t
1
= 1.0 ms, t
2
= 5.0 ms. (D = 0.2)
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P
(pk)
x R
JA
= 0.22 x 2.0 x 200 = 88C.
For more information, see AN569.
LMBT5087LT1
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