LESHAN RADIO COMPANY, LTD.
LMUN5311DW1/29
1
3
2
LMUN5311DW1T1
Series
SOT-363/SC-88
6
4
5
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a baseemitter resistor. These digital tran-
sistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT363 package
which is ideal for low power surface mount applications where board space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Pb-Free Package is available
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
1
3
2
6
4
5
Q
1
Q
2
R
1
R
2
R
1
R
2
XX
MARKING DIAGRAM
1
3
2
6
4
5
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
xx = Device Marking
=
(See Page 2)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
MAXIMUM RATINGS
(T
A
= 25C unless otherwise noted, common for Q
1
and Q
2
, minus sign for Q
1
(PNP) omitted)
Rating
Symbol Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
P
D
187 (Note 1.)
mW
T
A
= 25C
Derate above 25C
mW/C
Thermal Resistance
R
JA
670 (Note 1.)
C/W
Junction-to-Ambient
490 (Note 2.)
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25C
Derate above 25C
P
D
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/C
Thermal Resistance
Junction-to-Ambient
R
JA
493 (Note 1.)
325 (Note 2.)
C/W
Thermal Resistance
Junction-to-Lead
R
JL
188 (Note 1.)
208 (Note 2.)
C/W
Junction and Storage
Temperature
T
J
, T
stg
55 to +150
C
1. FR4 @ Minimum Pad 2. FR4 @ 1.0 x 1.0 inch Pad
LESHAN RADIO COMPANY, LTD.
LMUN5311DW-2/29
Device
Package
Marking
R1(K)
R2(K)
Shipping
LMUN5311DW1T1
SOT-363
11
10
10
3000/Tape&Reel
LMUN5311DW1T1G
SOT-363
11(Pb-Free)
10
10
3000/Tape&Reel
LMUN5312DW1T1
SOT-363
12
22
22
3000/Tape&Reel
LMUN5312DW1T1G
SOT-363
12(Pb-Free)
22
22
3000/Tape&Reel
LMUN5313DW1T1
SOT-363
13
47
47
3000/Tape&Reel
LMUN5313DW1T1G
SOT-363
13(Pb-Free)
47
47
3000/Tape&Reel
LMUN5314DW1T1
SOT-363
14
10
47
3000/Tape&Reel
LMUN5314DW1T1G
SOT-363
14(Pb-Free)
10
47
3000/Tape&Reel
LMUN5315DW1T1
SOT-363
15
10
3000/Tape&Reel
LMUN5315DW1T1G
SOT-363
15(Pb-Free)
10
3000/Tape&Reel
LMUN5316DW1T1
SOT-363
16
4.7
3000/Tape&Reel
LMUN5316DW1T1G
SOT-363
16(Pb-Free)
4.7
3000/Tape&Reel
LMUN5330DW1T1
SOT-363
30
1
1
3000/Tape&Reel
LMUN5330DW1T1G
SOT-363
30(Pb-Free)
1
1
3000/Tape&Reel
LMUN5331DW1T1
SOT-363
31
2.2
2.2
3000/Tape&Reel
LMUN5331DW1T1G
SOT-363
31(Pb-Free)
2.2
2.2
3000/Tape&Reel
LMUN5332DW1T1
SOT-363
32
4.7
4.7
3000/Tape&Reel
LMUN5332DW1T1G
SOT-363
32(Pb-Free)
4.7
4.7
3000/Tape&Reel
LMUN5333DW1T1
SOT-363
33
4.7
47
3000/Tape&Reel
LMUN5333DW1T1G
SOT-363
33(Pb-Free)
4.7
47
3000/Tape&Reel
LMUN5334DW1T1
SOT-363
34
22
47
3000/Tape&Reel
LMUN5334DW1T1G
SOT-363
34(Pb-Free)
22
47
3000/Tape&Reel
LMUN5335DW1T1
SOT-363
35
2.2
47
3000/Tape&Reel
LMUN5335DW1T1G
SOT-363
35(Pb-Free)
2.2
47
3000/Tape&Reel
LMUN5311DW1T1 Series
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
LESHAN RADIO COMPANY, LTD.
LMUN5311DW-3/29
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
, - minus sign for Q
1
(PNP) omitted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
DC Current Gain
LMUN5311DW1T1
(V
CE
= 10 V, I
C
= 5.0 mA)
LMUN5312DW1T1
LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) LMUN5330DW1T1/LMUN5331DW1T1
(I
C
= 10 mA, I
B
= 1 mA) LMUN5315DW1T1/LMUN5316DW1T1
LMUN5332DW1T1/LMUN5333DW1T1/LMUN5334DW1T1
V
CE(sat)
-
-
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
W
)
LMUN5311DW1T1
LMUN5312DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
W
)
LMUN5313DW1T1
V
OL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
W
)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k
W
)
LMUN5330DW1T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
W
)
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5333DW1T1
V
OH
4.9
-
-
Vdc
Input Resistor
LMUN5311DW1T1
LMUN5312DW1T1
LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
k
W
Resistor Ratio LMUN5311DW1T1/LMUN5312DW1T1/LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1/LMUN5316DW1T1
LMUN5330DW1T1/LMUN5331DW1T1/LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
R1/R2
0.8
0.17
-
0.8
0.055
0.38
0.038
1.0
0.21
-
1.0
0.1
0.47
0.047
1.2
0.25
-
1.2
0.185
0.56
0.056
4. Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
LMUN5311DW1T1 Series
LESHAN RADIO COMPANY, LTD.
LMUN5311DW-4/29
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
, - minus sign for Q
1
(PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
-
-
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
-
-
500
nAdc
Emitter-Base Cutoff Current
LMUN5311DW1T1
(V
EB
= 6.0 V, I
C
= 0)
LMUN5312DW1T1
LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
m
A, I
E
= 0)
V
(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
-
-
Vdc
3. Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
Figure 1. Derating Curve
300
200
150
100
50
0
- 50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
C)
R
q
JA
= 490
C/W
250
P
D
, POWER DISSIP
A
TION (mW)
ALL LMUN5311DW1T1 SERIES DEVICES
LMUN5311DW1T1 Series
LESHAN RADIO COMPANY, LTD.
LMUN5311DW-5/29
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - LMUN5311DW1T1 NPN TRANSISTOR
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
10
0
20
30
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
T
A
= -25C
75C
25C
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001
0
20
40
50
I
C
, COLLECTOR CURRENT (mA)
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75C
25C
-25C
T
A
= -25C
25C
Figure 5. Output Current versus Input Voltage
75C
25C
T
A
= -25C
100
10
1
0.1
0.01
0.001
0
1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 6. Input Voltage versus Output Current
50
0
10
20
30
40
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
75C
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
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