ChipFind - документация

Электронный компонент: MBV109T1

Скачать:  PDF   ZIP
LESHAN RADIO COMPANY, LTD.
MBV109. MMBV109*. MV209*1/2
1
3
2
Designed for general frequency control and tuning applications;
providing solidstate reliability in replacement of mechanical tuning
methods.
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Silicon Epicap Diode
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MBV109T1
MMBV109LT1
MV209
Reverse Voltage
V
R
30
Vdc
Forward Current
I
F
200
mAdc
Device Dissipation
P
D
@T
A
= 25C
280
200
200
mW
Derate above 25C
2.8
2.0
1.6
mW/C
Junction Temperature
T
J
+125
C
Storage Temperature Range
T
stg
55 to +150
C
DEVICE MARKING
MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS(T
A
=25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
(BR)R
30
--
--
Vdc
( I
R
= 10
Adc)
Reverse Voltage Leakage Current
I
R
--
--
0.1
mAdc
( V
R
= 25Vdc)
Diode Capacitance Temperature Coefficient
TC
C
--
300
--
ppm/C
(V
R
= 3.0 Vdc, f = 1.0 MHz)
Device Type
Min
Nom
Max
Min
Min
Max
MBV109T1, MMBV109LT1, MV209
26
29
32
200
5.0
6.5
1. C
R
is the ratio of C
t
measured at 3 V dc divided by C
t
measured at 25 Vdc.
MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
C
T
Diode Capacitance
V
R
=3.0Vdc, f =1.0MHz
p F
Q, Figure of
Merit
V
R
= 3.0Vdc
f = 50MHz
C
R,
Capacitance
Ratio
C
3
/ C
25
f=1.0MHz (Note 1)
MMBV109LT1
MBV109T1
MV209
CASE 31808, STYLE 6
SOT 23 (TO236AB)
2632 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
LESHAN RADIO COMPANY, LTD.
MBV109. MMBV109*. MV209*2/2
MBV109T1 MMBV109LT1 MV209
C
T
, CAP
ACIT
ANCE (pF)
Q , FIGURE OF MERIT
1000
100
10
10
100
1000
40
36
32
28
24
20
16
12
8
4
0
1
3
10
30
100
f
, FREQUENCY ( MHz )
Figure 2. Figure of Merit
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
75
50
25
0
+25
+50
+75
+100
+125
T
A
, AMBIENT TEMPERATURE (C)
Figure 4. Diode Capacitance
C
T
,
DIODE

CAP
ACIT
ANCE
(NORMALIZED)
100
20
10
2.0
1.0
0.2
0.1
0.02
0.01
0.002
0.001
60
40
20
0
20
40
60
80
100
120
140
T
A
, AMBIENT TEMPERATURE (C)
Figure 3 . Leakage Current
I
R
, REVERSE CURRENT (nA)
NOTES ON TESTING AND SPECIFICATIONS
1. C
R
is the ratio of C
t
measured at 3.0 Vdc divided by C
t
measured at 25 Vdc.