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Электронный компонент: MMBD301LT1

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LESHAN RADIO COMPANY, LTD.
G161/2
MAXIMUM RATINGS(T
J
=125
C unless otherwise noted
)
MBD301
MMBD301LT1
Rating
symbol
value
unit
Reverse Voltage
V
R
30
Volts
Forward Power Dissipation
P
F
@TA=25 C
280
200
mW
Derate above 25 C
2.8
2.0
mW/ C
Operating Junction
T
J
C
Temperature Range
55 to +125
Storage Temperature Range
T
stg
55 to +150
C
DEVICE MARKING
MMBD301LT1=4T
ELECTRICAL CHARACTERISTICS(T
A
=25 C unless otherwise noted)
Characteristic
Symbol
Min
Typ
M a x
Unit
Reverse Breakdown Voltage(I
R
=10
A)
V
(BR)R
30
--
--
Volts
Total Capacitance(V
R
=15V,f=1.0MHz,)Figure1
C
T
--
0.9
1.5
pF
Reverse Leakage(V
R
=25V)Figure3
I
R
--
13
200
n
Adc
Forward Voltage(IF=1.0mAdc)Figure4
V
F
--
0.38
0.45
Vdc
Forward Voltage(IF=10mAdc)Figure4
V
F
--
0.52
0.6
Vdc
NOTE:MMBD301LT1 is also available in bulk packaging.Use MMBD301L as the device title to order this device in bulk.
Silicon HotCarrier Diodes
Schottky Barrier Diodes
3
CATHODE
1
ANODE
These devices are designed primarily for highefficiency UHF and VHF detector
applications.They are readily adaptable to many other fast switching RF and digital
applications.They are supplied in an inexpensive plastic package for lowcost,
highvolume consumer and industrial/commercial requirements.They are also
available in a Surface Mount package.
EXtremely Low Minority Carrier Lifetime 15ps(Typ)
very Low Capacitance 1.5pF(Max)@VR=15V
CLow Reverse Leakage IR=13 nAdc(Typ)MBD301,MMBD301
1
3
2
CASE 31808, STYLE 6
SOT 23 (TO236AB)
MMBD301LT1
30 VOLTS
SILICON HOTCARRIER
DETECTOR AND SWITCHING
DIODES
LESHAN RADIO COMPANY, LTD.
G162/2
MMBD301LT1
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE LEAKAGE (
A)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
3.0
6.0
9.0
12
15
18
21
24
27
30
500
400
300
200
100
0
0
10
20
30
40
50
60
70
80
90
100
10
1.0
0.1
0.01
0.001
0
6.0
12
18
24
30
100
10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
TYPICAL ELECTRICAL CHARACTERISTICS
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
I
F
, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
C
T
, T
O
T
AL CAP
ACIT
ANCE (pF)
, MINORITY CARRIER LIFETIME (ps)
f =1.0MHz
T
A
= 40C
T
A
= 85C
T
A
= 25C
KRAKAUER METHOD
T
A
= 100C
75C
25C
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50
INPUT)
PADS
CAPACITIVE
CONDUCTION
FORWARD
CONDUCTION
STORAGE
CONDUCTION
DUT
I
F(PEAK)
I
R(PEAK)
Figure 5. Krakauer Method of Measuring Lifetime