LESHAN RADIO COMPANY, LTD.
MMBD352WT11/2
Dual Schottky Barrier Diode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
V
R
7.0
V
CC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board
(1)
P
D
200 mW
T
A
= 25C
Derate above 25 1.6 mW/C
Thermal Resistance, Junction to Ambient
R
JA
625
C/W
Total Device Dissipation P
D
300 mW
Alumina Substrate
(2)
T
A
= 25C
Derate above 25C 2.4 mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
MMBD352WT1 = M5
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Forward Voltage
V
F
--
0.60
V
(I
F
= 10 mAdc)
Reverse Voltage Leakage Current
I
R
A
(V
R
= 3.0 V) -- 0.25
(V
R
= 7.0 V) -- 10
Capacitance C -- 1.0 pF
(V
R
= 0 V, f = 1.0 MHz)
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
These devices are designed primarily for UHF mixer applications but are
suitable also for use in detector and ultrafast switching circuits.
Very Low Capacitance -- Less Than 1.0 pF @ Zero Volts
Low Forward Voltage -- 0.5 Volts (Typ) @ I
F
= 10 mA
MMBD352WT1
1
3
2
CASE 41902 , STYLE 9
SOT323 / SC 70
2
CATHODE
3
CATHODE/ANODE
1
ANODE
LESHAN RADIO COMPANY, LTD.
MMBD352WT12/2
MMBD352WT1
TYPICAL CHARACTERISTICS
Figure 1. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 2. Capacitance
I
0.7
0.8
0.3
0.4
0.5
0.6
, FOR
W
ARD
CURRENT
(mA)
F
TA = 85
C
TA = 40
C
TA = 25
C
VR, REVERSE VOLTAGE (VOLTS)
0
1.0
0.9
0.8
0.6
0.7
1.0
2.0
3.0
4.0
C, CAP
ACIT
ANCE
(pF)
PDF 
ZIP