LESHAN RADIO COMPANY, LTD.
O81/4
1
3
2
MMBT2907LT1
MMBT2907ALT1
CASE 31808, STYLE 6
SOT23 (TO236AB)
General Purpose Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
2907
2907A
Unit
CollectorEmitter Voltage
V
CEO
40
60
Vdc
CollectorBase Voltage
V
CBO
60
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current -- Continuous
I
C
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
MMBT2907LT1 = M2B, MMBT2907ALT1 = 2F
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(3)
V
(BR)CEO
Vdc
(I
C
= 10 mAdc, I
B
= 0)
MMBT2907
40
--
MMBT2907A
60
--
CollectorEmitter Breakdown Voltage(I
C
= 10
Adc, I
E
= 0)
V
(BR)CBO
60
--
Vdc
EmitterBase Breakdown Voltage(I
E
= 10
Adc, I
C
= 0)
V
(BR)EBO
5.0
--
Vdc
Collector Cutoff Current( V
CB
= 30Vdc, I
BE(OFF)
= 0.5Vdc)
I
CEX
--
50
nAdc
Collector Cutoff Current
I
CBO
Adc
( V
CB
= 50Vdc, I
E
= 0)
MMBT2907
--
0.020
MMBT2907A
--
0.010
( V
CB
= 50Vdc, I
E
= 0, T
A
=125C )
MMBT2907
--
20
MMBT2907A
--
10
Base Current( V
CE
= 30Vdc, V
EB(off)
= 0.5Vdc )
I
B
--
50
nAdc
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
2
EMITTER
3
COLLECTOR
1
BASE
Value
LESHAN RADIO COMPANY, LTD.
O82/4
MMBT2907LT1
MMBT2907ALT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
(I
C
= 0.1mAdc, V
CE
= 10 Vdc)
MMBT2907
35
MMBT2907A
75
(I
C
=1.0mAdc, V
CE
= 10 Vdc)
MMBT2907
50
MMBT2907A
100
(I
C
= 10 mAdc, V
CE
= 10Vdc)
MMBT2907
75
MMBT2907A
100
(I
C
= 150mAdc, V
CE
=10 Vdc)(3)
MMBT2907
MMBT2907A
100
300
(I
C
= 500mAdc, V
CE
=10 Vdc)(3)
MMBT2907
30
MMBT2907A
50
CollectorEmitter Saturation Voltage(3)
V
CE(sat)
Vdc
(I
C
= 150mAdc, I
B
= 15 mAdc)
0.4
(I
C
= 500 mAdc, I
B
= 50 mAdc)
1.6
BaseEmitter Saturation Voltage(3)
V
BE(sat)
Vdc
(I
C
= 150mAdc, I
B
= 15 mAdc)
1.3
(I
C
= 500mAdc, I
B
= 50 mAdc)
2.6
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product(3),(4)
f
T
200
MHz
(I
C
= 50mAdc, V
CE
= 20Vdc, f = 100MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
8.0
pF
Input Capacitance
C
ibo
30
pF
(V
EB
= 2.0Vdc, I
C
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
TurnOn Time
(V
CC
= 30 Vdc,
t
on
--
45
Delay Time
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
--
10
ns
Rise Time
t
r
--
40
Fall Time
(V
CC
= 6.0 Vdc,
t
f
--
30
Storage Time
I
C
= 150 mAdc,I
B1
= I
B2
= 15 mAdc)
t
s
--
80
ns
TurnOff Time
t
off
--
100
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
4. f
T
is defined as the frequency at which |h f
e
| extrapolates to unity.
Figure 1. Delay and Rise Time Test Circuit
0
0
16 V
200 ns
50
1.0 k
200
30 V
TO OSCILLOSCOPE
RISE TIME < 5.0 ns
+15 V
6.0 V
1.0 k
37
50
1N916
1.0 k
200 ns
30 V
TO OSCILLOSCOPE
RISE TIME < 5.0 ns
INPUT
Z
O
= 50
PRF = 150 PPS
RISE TIME <2.0 ns
P.W. < 200 ns
INPUT
Z o = 50
PRF = 150 PPS
RISE TIME <2.0 ns
P.W. <200 ns
Figure 2. Storage and Fall Time Test Circuit
LESHAN RADIO COMPANY, LTD.
O83/4
I
C
, COLLECTOR CURREN (mA)
Figure 3. DC Current Gain
MMBT2907LT1
MMBT2907ALT1
T
J
= 125C
h
FE
, NORMALIZED CURRENT GAIN
V
CE
, COLLECT
OR EMITTER
VOL
T
AGE (VOL
TS)
I
C
= 1.0 mA
t
r
I
B
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
I
C
, COLLECTOR CURRENT
Figure 5. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
Figure 6. TurnOff Time
t, TIME (ns)
t, TIME (ns)
25C
55C
V
CE
= 1.0 V
V
CE
= 10 V
10 mA
100 mA
500 mA
2.0 V
t
d
@ V
BE(off)
= 0 V
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25C
t
f
t '
s
= t
s
1/8 t
f
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25C
0.0050.01
0.02 0.03
0.05 0.7 0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
70 100
200
300
500
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1.0
0.8
0.6
0.4
0.2
0
5.07.0 10
20 30
50 70 100
200 300 500
300
200
100
70
50
30
20
10
7.0
5.0
3.0
5.07.0 10
20 30
50 70 100
200 300 500
300
200
100
70
50
30
20
10
7.0
5.0
3.0
TYPICAL CHARACTERISTICS
LESHAN RADIO COMPANY, LTD.
O84/4
MMBT2907LT1
MMBT2907ALT1
C
eb
TYPICAL SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25C
NF, NOISE FIGURE (dB)
f=1.0 kHz
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
I
C
= 1.0 mA, R
S
= 430
500
A, R
S
= 560
50
A, R
S
= 2.7 k
100
A, R
S
= 1.6 k
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
R
S
, SOURCE RESISTANCE (
)
Figure 8. Source Resistance Effects
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
I
C
, COLLECTOR CURRENT (mA)
Figure 10. CurrentGain -- Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
Figure 11. "On" Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
T
J
= 25C
f
T
, CURRENT GAIN -- BANDWIDTH
PRODUCT (MHz)
COEFFICIENT (mV/ C)
R
VB
for V
BE
I
C
= 50
A
100
A
500
A
1.0 mA
R
S
=OPTIMUM SOURCE RESISTANCE
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
1.0
2.0
5.0
10
20
50
100 200
500 1000
0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100 200
500
+0.5
0
0.5
1.0
1.5
2.0
2.5
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
10
8.0
6.0
4.0
2.0
0
10
8.0
6.0
4.0
2.0
0
NF, NOISE FIGURE (dB)
C
cb
30
20
10
7.0
5.0
3.0
2.0
C, CAP
ACIT
ANCE(pF)
400
300
200
100
80
60
40
30
20
V
CE
=20 V
T
J
= 25C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
R
VC
for V
CE(sat)
0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100 200
500
1.0
0.8
0.6
0.4
0.2
0
V
,
VOL
T
AGE (VOL
TS)
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