LESHAN RADIO COMPANY, LTD.
M201/4
1
3
2
MMBT5550LT1
MMBT5551LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 31808, STYLE 6
SOT23 (TO236AB)
High Voltage Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
140
Vdc
CollectorBase Voltage
V
CBO
160
Vdc
EmitterBase Voltage
V
EBO
6.0
Vdc
Collector Current -- Continuous
I
C
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
MMBT5550LT1 = M1F, MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(3)
V
(BR)CEO
Vdc
(I
C
= 1.0 mAdc, I
B
= 0)
MMBT5550
140
--
MMBT5551
160
--
CollectorBase Breakdown Voltage
V
(BR)CBO
Vdc
(I
C
= 100
Adc, I
E
= 0)
MMBT5550
160
--
MMBT5551
180
--
EmitterBase Breakdown Voltage
V
(BR)EBO
Vdc
(I
E
= 10
Adc, I
C
= 0)
6.0
--
Collector Cutoff Current
I
CBO
( V
CB
= 100Vdc, I
E
= 0)
MMBT5550
--
100
nAdc
( V
CB
= 120Vdc, I
E
= 0)
MMBT5551
--
50
( V
CB
= 100Vdc, I
E
= 0, T
A
=100 C)
MMBT5550
--
100
Adc
( V
CB
= 120Vdc, I
E
= 0, T
A
=100 C)
MMBT5551
--
50
Emitter Cutoff Current
I
EBO
--
50
nAdc
( V
BE
= 4.0Vdc, I
C
= 0)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
LESHAN RADIO COMPANY, LTD.
M202/4
MMBT5550LT1 MMBT5551LT1
ELECTRICAL CHARACTERISTICS
(T A = 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
MMBT5550
60
--
MMBT5551
80
--
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
MMBT5550
60
250
MMBT5551
80
250
(I
C
= 50 mAdc, V
CE
= 5.0Vdc)
MMBT5550
20
--
MMBT5551
30
--
CollectorEmitter Saturation Voltage
V
CE(sat)
Vdc
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
Both Types
--
0.15
(I
C
= 50 mAdc, I
B
= 5.0 mAdc )
MMBT5550
--
0.25
MMBT5551
--
0.20
BaseEmitter Saturation Voltage
V
BE(sat)
Vdc
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
Both Types
--
1.0
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
MMBT5550
--
1.2
MMBT5551
--
1.0
LESHAN RADIO COMPANY, LTD.
M203/4
MMBT5550LT1 MMBT5551LT1
V
CE
= 1.0 V
V
CE
= 5.0 V
I
C
, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
h
FE
, DC CURRENT GAIN (NORMALIZED)
T
J
= +125C
+25C
55C
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
500
300
200
100
50
30
20
10
7.0
5.0
I
B
, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
V
BE
, BASEEMITTER VOLTAGE (VOLTS)
Figure 3. Collector CutOff Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. "On" Voltages
V
CE
, COLLECTOR EMITTER VOL
T
AGE (VOL
TS)
I
C
, COLLECT
OR CURRENT (
A)
V
,
VOL
T
AGE (VOL
TS)
0.4 0.3
0.2
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
10
1
10
0
10
1
10
2
10
3
10
4
10
5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
1.0
0.8
0.6
0.4
0.2
0
I
C
= 1.0 mA
T
J
= 25C
10 mA
30 mA
100 mA
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
1.0
0.8
0.6
0.4
0.2
0
V
CE
= 30 V
T
J
= 125C
75C
25C
I
C
= I
CES
REVERSE
FORWARD
T
J
= 25C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
LESHAN RADIO COMPANY, LTD.
M204/4
MMBT5550LT1
MMBT5551LT1
C
obo
C, CAP
ACIT
ANCE (pF)
10.2 V
V
in
10 ms
INPUT PULSE
V
BB
R
B
5.1 k
0.25 mF
V
in
1N914
V
out
R
C
V
CC
30 V
3.0 k
t
r
, t
f
<10 ns
DUTY CYCLE = 1.0%
t, TIME (ns)
Values Shown are for I
C
@ 10 mA
Figure 6. Switching Time Test Circuit
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances Figure
I
C
, COLLECTOR CURRENT (mA)
8. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
Figure 9. TurnOff Time
t, TIME (ns)
V
, TEMPERA
TURE COEFFICIENT (mV/C)
T
J
= 25C
I
C
/I
B
= 10
T
J
= 25C
t
r
@ V
CC
= 120 V
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 1.0 V
V
CC
= 120 V
I
C
/I
B
= 10
T
J
= 25C
t
f
@ V
CC
= 120 V
t
f
@ V
CC
= 30 V
t
s
@ V
CC
= 120 V
VC
for V
CE(sat)
VB
for V
BE(sat)
T
J
= 55C to +135C
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
2.5
2
1.5
1.0
0.5
0
0.5
1.0
1.5
2.0
2.5
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
C
ibo
0.2
0.3
0.7 0.5 1.0
2.0
3.0
5.0 7.0
10
20
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200
1000
500
300
200
100
50
30
20
10
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200
5000
3000
2000
1000
500
300
200
100
50
100
8.8 V
100
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