LESHAN RADIO COMPANY, LTD.
M221/4
2
EMITTER
3
COLLECTOR
1
BASE
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
50
45
Vdc
CollectorBase Voltage
V
CBO
60
55
Vdc
EmitterBase Voltage
V
EBO
6.0
Vdc
Collector Current -- Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
MMBT6428LT1 = 1KM, MMBT6429LT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(3)
V
(BR)CEO
Vdc
(I
C
= 1.0 mAdc, I
B
= 0)
MMBT6428
50
--
(I
C
= 1.0 mAdc, I
B
= 0)
MMBT6429
45
--
CollectorBase Breakdown Voltage
V
(BR)CBO
Vdc
(I
C
= 0.1mAdc, I
E
= 0)
MMBT6428
60
--
(I
C
= 0.1mAdc, I
E
= 0)
MMBT6429
55
--
Collector Cutoff Current
I
CBO
Adc
( V
CE
= 30Vdc, )
--
0.1
Collector Cutoff Current
I
CBO
Adc
( V
CB
= 30Vdc, I
E
= 0 )
--
0.01
Emitter Cutoff Current
I
EBO
--
0.01
Adc
( V
EB
= 5.0Vdc, I
C
= 0)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
6428LT1 6429LT1
1
3
2
MMBT6428LT1
MMBT6429LT1
CASE 31808, STYLE 6
SOT23 (TO236AB)
LESHAN RADIO COMPANY, LTD.
M222/4
MMBT6428LT1 MMBT6429LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
(I
C
= 0.01 mAdc, V
CE
= 5.0 Vdc)
MMBT6428
250
--
MMBT6429
500
--
(I
C
= 0.1 mAdc, V
CE
= 5.0Vdc)
MMBT6428
250
650
MMBT6429
500
1250
(I
C
= 1.0 mAdc, V
CE
= 5.0Vdc)
MMBT6428
250
--
MMBT6429
500
--
(I
C
= 10 mAdc, V
CE
= 5.0Vdc)
MMBT6428
250
--
MMBT6429
500
--
CollectorEmitter Saturation Voltage
V
CE(sat)
Vdc
(I
C
= 10 mAdc, I
B
= 0.5 mAdc)
0.2
(I
C
= 100 mAdc, I
B
= 0.5 mAdc)
0.6
BaseEmitter On Voltage
V
BE(on)
0.56
0.66
Vdc
(I
C
= 1.0 mAdc, V
CE
= 5.0mAdc)
SMALLSIGNAL CHARACTERISTICS
Current GainBandwidth Product
f
T
100
700
MHz
(V
CE
= 5.0 Vdc, I
C
= 1.0mAdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
3.0
pF
Input Capacitance
C
ibo
8.0
pF
(V
EB
= 0.5 Vdc, I
C
= 0 , f = 1.0 MHz)
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
LESHAN RADIO COMPANY, LTD.
M223/4
V
T
, T
O
T
AL NOISE VOL
T
AGE (nV)
R
S
, SOURCE RESISTANCE (
)
Figure 6. Total Noise Voltage
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25C)
NOISE VOLTAGE
e
n
, NOISE VOL
T
AGE (nV)
e
n
, NOISE VOL
T
AGE (nV)
I
n
, NOISE CURRENT (pA)
NF, NOISE FIGURE (dB)
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
100 Hz NOISE DATA
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Effects of Collector Current
f, FREQUENCY (Hz)
Figure 4. Noise Current
R
S
, SOURCE RESISTANCE (
)
Figure 5. Wideband Noise Figure
R
S
, SOURCE RESISTANCE (
)
Figure 7. Noise Figure
BANDWIDTH = 1.0 Hz
NF, NOISE FIGURE (dB)
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
300
A
R
S
0
I
C
= 10 mA
3.0 mA
1.0 mA
f = 10 Hz
R
S
0
100 Hz
1.0 kHz
10 kHz
100 kHz
30
A
I
C
= 10 mA
3.0 mA
1.0 mA
300
A
100
A
10
A
R
S
0
BANDWIDTH = 10 Hz to 15.7 kHz
I
C
= 1.0 mA
500
A
100
A
10
A
BANDWIDTH = 1.0 Hz
I
C
= 10 mA
3.0 mA
1.0 mA
300
A
100
A
30
A
10
A
I
C
= 10 mA
3.0 mA
1.0 mA
300
A
100
A
30
A
10
A
BANDWIDTH = 1.0 Hz
30
20
10
7.0
5.0
3.0
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
30
20
10
7.0
5.0
3.0
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
2.0
16
12
8.0
4.0
0
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
300
200
100
70
50
30
20
10
7.0
5.0
3.0
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
20
16
12
8.0
4.0
0
~
~
~
~
~
~
MMBT6428LT1 MMBT6429LT1
LESHAN RADIO COMPANY, LTD.
M224/4
V
CE
= 5.0 V
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 9. "On" Voltages
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
h
FE
, DC CURRENT GAIN (NORMALIZED)
R
VBE
, BASE EMITTER
TEMPERA
TURE COEFFICIENT (mV/ C)
f
T
, CURRENT GAIN -- BANDWIDTH
PRODUCT (MHz)
C, CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Temperature Coefficients
V
,
VOL
T
AGE (VOL
TS)
I
C
, COLLECTOR CURRENT (mA)
Figure 12. CurrentGain -- Bandwidth Product
T
A
= 125C
25C
55C
T
J
= 25C
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
T
J
= 25C to 125C
55C to 25C
T
J
= 25C
C
cb
C
ob
C
eb
C
ib
V
CE
= 5.0 V
T
J
= 25C
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
4.0
3.0
2.0
1.0
0.7
0.5
0.4
0.3
0.2
0.01 0.02 0.05
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
1.0
0.8
0.6
0.4
0.2
0
0.01 0.02 0.05
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
0.4
0.8
1.2
1.6
2.0
2.4
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
8.0
6.0
4.0
3.0
2.0
1.0
0.8
1.0
2.0
3.0
5.0
7.0 10
20
30
50
70
100
50
300
200
100
70
50
MMBT6428LT1 MMBT6429LT1
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