LESHAN RADIO COMPANY, LTD.
M231/5
1
3
2
MMBT6517LT1
CASE 31808, STYLE 6
SOT23 (TO236AB)
High Voltage Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
350
Vdc
CollectorBase Voltage
V
CBO
350
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Base Current
I
B
250
mAdc
Collector Current -- Continuous
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
MMBT6517LT1 = 1Z
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
V
(BR)CEO
350
--
Vdc
(I
C
= 1.0 mAdc )
CollectorBase Breakdown Voltage
V
(BR)CBO
350
--
Vdc
(I
C
= 100
Adc )
EmitterBase Breakdown Voltage
V
(BR)EBO
6.0
--
Vdc
(I
E
= 10
Adc )
Collector Cutoff Current
I
CBO
--
50
nAdc
( V
CB
= 250Vdc )
Emitter Cutoff Current
I
EBO
--
50
nAdc
( V
EB
= 5.0Vdc )
2
EMITTER
3
COLLECTOR
1
BASE
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
LESHAN RADIO COMPANY, LTD.
M232/5
MMBT6517LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
--
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
20
--
(I
C
= 10mAdc, V
CE
= 10 Vdc)
30
--
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
30
200
(I
C
= 50 mAdc, V
CE
= 10 Vdc)
20
200
(I
C
= 100 mAdc, V
CE
= 10 Vdc)
15
--
CollectorEmitter Saturation Voltage(3)
V
CE(sat)
Vdc
(I
C
= 10mAdc, I
B
= 1.0mAdc)
--
0.30
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
--
0.35
(I
C
= 30 mAdc, I
B
= 3.0mAdc)
--
0.50
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
--
1.0
Base Emitter Saturation Voltage
V
BE(sat)
Vdc
(I
C
= 10mAdc, I
B
= 1.0mAdc,)
--
0.75
(I
C
= 20mAdc, I
B
= 2.0mAdc,)
--
0.85
(I
C
= 30mAdc, I
B
= 3.0mAdc,)
--
0.90
BaseEmitter On Voltage
V
BE(on)
--
2.0
Vdc
(I
C
= 100mAdc, V
CE
= 10Vdc)
SMALLSIGNAL CHARACTERISTICS
Current GainBandwidth Product
f
T
40
200
MHz
(V
CE
= 20 Vdc, I
C
= 10mAdc, f = 20 MHz)
Collector Base Capacitance
(V
CB
= 20 Vdc, f = 1.0 MHz)
C
cb
--
6.0
pF
Emitter Base Capacitance
C
eb
--
80
pF
(V
EB
=0.5 Vdc, f = 1.0 MHz)
3. Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
LESHAN RADIO COMPANY, LTD.
M233/5
V
CE
= 10 V
MMBT6517LT1
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
f
T
, CURRENT GAIN -- BANDWIDTH
PRODUCT (MHz)
h
FE
, DC CURRENT GAIN
V
,
VOL
T
AGE (VOL
TS)
C, CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. CurrentGain -- Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
Figure 3. "On" Voltages
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
R
V
, TEMPERA
TURE COEFFI-
CIENTS (mV/C)
T
J
= 125C
25C
55C
T
J
= 25C
V
CE
= 20 V
f = 20 MHz
T
J
= 25C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
R
VC
for V
CE(sat)
V
CE(sat)
@ I
C
/I
B
= 5.0
R
VC
for V
BE
25C to 125C
55C to 25C
55C to 125C
I
C
I
B
= 10
T
J
= 25C
C
cb
C
eb
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
200
100
70
50
30
20
10
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
100
70
50
30
20
10
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
2.5
2.0
1.5
1.0
0.5
0
0.5
1.0
1.5
2.0
2.5
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
LESHAN RADIO COMPANY, LTD.
M234/5
MMBT6517LT1
I
C
, COLLECTOR CURRENT (mA)
Figure 6. TurnOn Time
t, TIME (ns)
RESIST
ANCE (NORMALIZED)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. TurnOff Time
Figure 8. Switching Time Test Circuit
t, TIME (ms)
Figure 9. Thermal Response
t, TIME (ns)
t
d
@ V
BE(off)
= 2.0 V
t
r
V
CE(off)
= 100 V
I
C
/I
B
= 5.0
T
J
= 25C
V
CE(off)
= 100 V
I
C
/I
B
= 5.0
I
B1
= I
B2
T
J
= 25C
t
s
t
f
+10.8 V
9.2 V
+V CC
50
SAMPLING SCOPE
1/2MSD7000
V
CC
ADJUSTED
FOR V
CE(off)
= 100 V
APPROXIMATELY
1.35 V
(ADJUST FOR V
(BE)off
= 2.0 V)
PULSE WIDTH
100 ms
t
r
, t
f
<
5.0 ns
DUTY CYCLE
<
1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
D = 0.5
SINGLE PULSE
Z
qJC(t)
= r(t) R
qJC
T
J(pk)
T
C
= P
(pk)
Z
qJC(t)
Z
qJA(t)
= r(t) R
qJA
T
J(pk)
T
A
= P
(pk)
Z
qJA(t)
0.05
0.1
SINGLE PULSE
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
1.0k
700
500
300
200
100
70
50
30
20
10
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
10k
7.0k
5.0k
3.0k
2.0k
1.0k
700
500
300
200
100
50
2.2 k
20 k
1.0 k
~
~
LESHAN RADIO COMPANY, LTD.
M235/5
MMBT6517LT1
FIGURE A
Design Note: Use of Transient Thermal Resistance Data
t
P
P
P
P
P
t
1
1/f
DUTY CYCLE =t
1
f =
t
1
t
P
PEAK PULSE POWER = P
P
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