LESHAN RADIO COMPANY, LTD.
O21/2
VHF / UFH Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
15
Vdc
CollectorBase Voltage
V
CBO
30
Vdc
EmitterBase Voltage
V
EBO
3.0
Vdc
Collector Current -- Continuous
I
C
50
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
MMBT9181LT1 = M3B
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
V
(BR)CEO
15
--
Vdc
(I
C
= 3.0 mAdc, I
B
= 0)
CollectorBase Breakdown Voltage
V
(BR)CBO
30
--
Vdc
(I
C
= 1.0
Adc, I
E
= 0)
EmitterBase Breakdown Voltage
V
(BR)EBO
3.0
--
Vdc
(I
E
= 10
Adc, I
C
= 0)
Collector Cutoff Current
I
CBO
--
50
nAdc
( V
CB
= 15 Vdc, I
E
= 0)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2
EMITTER
3
COLLECTOR
1
BASE
1
3
2
MMBT918LT1
CASE 31808, STYLE 6
SOT23 (TO236AB)
LESHAN RADIO COMPANY, LTD.
O22/2
MMBT918LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
20
(I
C
= 3.0 mAdc, V
CE
= 1.0 Vdc)
CollectorEmitter Saturation Voltage
V
CE(sat)
0.4
Vdc
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
BaseEmitter Saturation Voltage
V
BE(sat)
--
1.0
Vdc
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
f
T
600
--
MHz
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
Output Capacitance
C
obo
pF
(V
CB
= 0 Vdc, I
E
= 0, f = 1.0 MHz)
--
3.0
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
--
1.7
Input Capacitance
C
ibo
--
2.0
pF
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Noise Figure
NF
--
6.0
dB
(I
C
= 1.0 mAdc, V
CE
= 6.0 Vdc, R
S
= 50
, f = 60 MHz) (Figure 1)
Power Output
P
out
30
--
mW
(I
C
= 8.0 mAdc, V
CB
= 15 Vdc, f = 500 MHz)
CommonEmitter Amplifier Power Gain
G
pe
11
--
dB
(I
C
= 6.0 mAdc, V
CB
= 12 Vdc, f = 200 MHz)
NF TEST CONDITIONS
I
C
= 1.0 mA
V
CE
= 6.0 VOLTS
R
S
= 50
f = 60 MHz
G
pe
TEST CONDITIONS
I
C
= 6.0 mA
V
CE
= 12 VOLTS
f = 200 MHz
Figure 1. NF, G pe Measurement Circuit 20200
V
BB
V
CC
EXTERNAL
100 k
0.018
F
0.018
F
3
1000 pF BYPASS
0.018
F
0.018
F
50
RF
VM
C
G
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