LESHAN RADIO COMPANY, LTD.
M261/5
1
3
2
MMBTA13LT1
MMBTA14LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 31808, STYLE 6
SOT23 (TO236AB)
Darlington Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CES
30
Vdc
CollectorBase Voltage
V
CBO
30
Vdc
EmitterBase Voltage
V
EBO
10
Vdc
Collector Current -- Continuous
I
C
300
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
V
(BR)CEO
30
--
Vdc
(I
C
= 100
Adc, V
BE
= 0)
Collector Cutoff Current
I
CBO
--
100
nAdc
( V
CB
= 30Vdc, I
E
= 0)
Emitter Cutoff Current
I
EBO
--
100
nAdc
( V
EB
= 10Vdc, I
C
= 0)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
LESHAN RADIO COMPANY, LTD.
M262/5
MMBTA13LT1 MMBTA14LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS (3)
DC Current Gain
h
FE
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
MMBTA13
5,000
--
MMBTA14
10,000
--
(I
C
= 100mAdc, V
CE
= 5.0Vdc)
MMBTA13
10,000
--
MMBTA14
20,000
--
CollectorEmitter Saturation Voltage
V
CE(sat)
1.5
Vdc
(I
C
= 100 mAdc, I
B
= 0.1 mAdc)
BaseEmitter On Voltage
V
BE
--
2.0
Vdc
(I
C
= 100mAdc, V
CE
= 5.0Vdc)
SMALLSIGNAL CHARACTERISTICS
Current GainBandwidth Product(4)
f
T
125
--
MHz
(V
CE
= 5.0 Vdc, I
C
= 10mAdc, f = 100 MHz)
3. Pulse Test: Pulse Width
<
300
s, Duty Cycle
<
2.0%.
4. f
T
= |h f
e
| *f
test
.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
LESHAN RADIO COMPANY, LTD.
M263/5
MMBTA13LT1 MMBTA14LT1
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25C)
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
Figure 3. Noise Current
e
n
, NOISE VOL
T
AGE (nV)
BANDWIDTH = 1.0 Hz
R
S
0
10
A
100
A
I
C
=1.0mA
I
n
, NOISE CURRENT (pA)
BANDWIDTH = 1.0 Hz
I
C
=1.0mA
100
A
500
200
100
50
20
10
5.0
10
20
50 100
200
500 1.0k 2.0k
5.0k 10k 20k
50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10
A
~
~
10
20
50 100
200
500 1.0k 2.0k
5.0k 10k 20k
50k 100k
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
500
200
100
50
20
10
5.0
R
S
, SOURCE RESISTANCE (k
)
Figure 4. Total Wideband Noise Voltage
R
S
, SOURCE RESISTANCE (k
)
Figure 5. Wideband Noise Figure
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
= 10
A
100
A
1.0 mA
200
100
70
50
30
20
10
BANDWIDTH = 10 Hz TO 15.7 kHz
10
A
100
A
I
C
= 1.0 mA
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
NF, NOISE FIGURE (dB)
V
T
, T
O
T
AL WIDEBAND NOISE VOL
T
AGE (nV)
LESHAN RADIO COMPANY, LTD.
M264/5
MMBTA13LT1 MMBTA14LT1
C
ibo
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
C, CAP
ACIT
ANCE (pF)
0.04
0.1
0.2
0.4
1.0
1.2
4.0
10
20
40
20
10
7.0
5.0
3.0
2.0
C
obo
I
C
, COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
C , COLLECTOR CURRENT (mA)
Figure 17. "ON" Voltages
V
,
VOL
T
AGE ( VOL
TS )
T
J
= 25C
+25C TO +125C
* R
VC
for V
CE(sat)
55C TO +25C
+25C TO +125C
55C TO +25C
VB
for V
BE
1.6
1.4
1.2
1.0
0.8
0.6
1.0
2.0
3.0
4.0
5.0
6.0
200k
100k
70k
50k
30k
20k
10k
7.0k
5.0k
3.0k
2.0k
T
J
= 125C
T
J
=25C
V
CE
= 5.0 V
f = 100 MHz
T
J
= 25C
I
C
, COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
0.5
1.0
2.0
5.0
10
20
50
100
200
500
4.0
2.0
1.0
0.8
0.6
0.4
0.2
|h
fe
|, SMALL SIGNAL CURRENT GAIN
25C
55C
V
CE
= 5.0V
5.0 7.0
10
20
30
50
70
100
200
300
500
h
FE
, DC CURRENT GAIN
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
500 1000
3.0
2.5
2.0
1.5
1.0
0.5
V
CE
, COLLECT
OR EMITTER VOL
T
AGE (VOL
TS)
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
I
B
, BASE CURRENT (
A)
Figure 9. Collector Saturation Region
5.0
7.0
10
20
30
50
70
100 200 300
500
V
BE(sat)
@ I
C
/I
B
= 1000
V
CE(sat)
@ I
C
/I
B
= 1000
V
BE(on)
@ V
CE
= 5.0 V
5.0 7.0
10
20
30
50
70
100
200
300
500
*APPLIES FOR I
C
/I
B
<h
FE
/3.0
SMALLSIGNAL CHARACTERISTICS
T
J
= 25C
I
C
= 10mA
50 mA
250mA
500mA
R
V
, TEMPERA
TURE COEFFICIENTS (mV/C)
LESHAN RADIO COMPANY, LTD.
M265/5
t, TIME (ms)
Figure 12. Thermal Response
r( t) TRANSIENT THERMAL RESIST
ANCE(NORMALIZED)
D = 0.5
0.05
0.1
0.2
SINGLE PULSE
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 13.Active Region Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.4
0.6
1.0
2.0
4.0
6.0
10
20
40
T
A
= 25C
T
C
= 25C
100
s
1.0 ms
1.0 s
I
C
, COLLECT
OR CURRENT (mA)
1.0k
700
500
300
200
100
70
50
30
20
10
MMBTA13LT1 MMBTA14LT1
SINGLE PULSE
Z
JC(t)
= r(t) R
JC
T
J(pk)
T
C
= P
(pk)
Z
JC(t)
Z
JA(t)
= r(t) R
JA
T
J(pk)
T
A
= P
(pk)
Z
JA(t)
FIGURE A
Design Note: Use of Transient Thermal
Resistance Data
t
P
P
P
P
P
t
1
1/f
DUTY CYCLE =t
1
f =
t
1
t
P
PEAK PULSE POWER = P
P
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