LESHAN RADIO COMPANY, LTD.
M301/3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CES
30
Vdc
CollectorBase Voltage
V
CBO
30
Vdc
EmitterBase Voltage
V
EBO
10
Vdc
Collector Current -- Continuous
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
MMBTA63LT1 = 2U MMBTA64LT1 = 2V
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
V
(BR)CEO
30
--
Vdc
(I
C
= 100
Adc, )
Collector Cutoff Current
I
CBO
--
100
nAdc
( V
CB
= 30Vdc)
Emitter Cutoff Current
I
EBO
--
100
nAdc
( V
EB
= 10Vdc )
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3
MMBTA63LT1
MMBTA64LT1
2
EMITTER
3
COLLECTOR
1
BASE
Darlington Transistors
PNP Silicon
1
2
CASE 31808, STYLE 6
SOT23 (TO236AB)
LESHAN RADIO COMPANY, LTD.
M302/3
MMBTA63LT1 MMBTA64LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain(3)
h
FE
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
MMBTA63
5,000
--
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
MMBTA64
10,000
--
(I
C
= 100mAdc, V
CE
= 5.0Vdc)
MMBTA63
10,000
--
(I
C
= 100mAdc, V
CE
= 5.0Vdc)
MMBTA64
20,000
--
CollectorEmitter Saturation Voltage
V
CE(sat)
1.5
Vdc
(I
C
= 100 mAdc, I
B
= 0.1 mAdc)
BaseEmitter On Voltage
V
BE(on)
--
2.0
Vdc
(I
C
= 100mAdc, V
CE
= 5.0Vdc)
SMALLSIGNAL CHARACTERISTICS
Current GainBandwidth Product(4)
f
T
125
--
MHz
(V
CE
= 5.0 Vdc, I
C
= 10mAdc, f = 100 MHz)
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
LESHAN RADIO COMPANY, LTD.
M303/3
MMBTA63LT1 MMBTA64LT1
T
A
= 125C
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 2. "On" Voltage
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. High Frequency Current Gain
h
FE
, DC CURRENT GAIN (X1.0 K)
V
,
VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OR EMITTER VOL
T
AGE
(VOL
TS)
|h
FE
|, HIGH FREQUENCY CURRENT GAIN
25C
55C
V
CE
= 2.0 V
5.0 V
10 V
T
A
= 25C
V
BE(on)
@ V
CE
= 5.0 V
V
CE(sat)
@ I
C
/I
B
= 1000
I
C
/I
B
= 100
T
A
= 25C
I
C
=
10 mA 50 mA 100 mA 175 mA
300 mA
V
CE
= 5.0 V
f = 100 MHz
T
A
= 25C
V
BE(sat)
@ I
C
/I
B
= 100
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
2.0
1.6
1.2
0.8
0.4
0
0.30.5 1.0
2.03.0 5.0
10
2030 50
100 200300
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1 0.2 0.5 1.0 2.0 5.0 10 20
50100 300 500 1k 2k
5k 10k
10
4.0
3.0
2.0
1.0
0.4
0.2
0.1
1.0 2.0
5.0
10
20
50
100 200
500
1k
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