LESHAN RADIO COMPANY, LTD.
M331/4
1
3
2
MMBTH10LT1
CASE 31808, STYLE 6
SOT23 (TO236AB)
VHF/UHF Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
25
Vdc
CollectorBase Voltage
V
CBO
30
Vdc
EmitterBase Voltage
V
EBO
3.0
Vdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
MMBTH10LT1 = 3EM
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
V
(BR)CEO
25
--
--
Vdc
(I
C
= 1.0 mAdc, I
B
= 0 )
CollectorBase Breakdown Voltage
V
(BR)CBO
30
--
--
Vdc
(I
C
= 100
Adc , I
E
= 0)
EmitterBase Breakdown Voltage
V
(BR)EBO
3.0
--
--
Vdc
(I
E
= 10
Adc , I
C
= 0)
Collector Cutoff Current
I
CBO
--
--
100
nAdc
( V
CB
= 25Vdc , I
E
= 0 )
Emitter Cutoff Current
I
EBO
--
--
100
nAdc
( V
EB
= 2.0Vdc , I
C
= 0 )
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2
EMITTER
3
COLLECTOR
1
BASE
LESHAN RADIO COMPANY, LTD.
M332/4
MMBTH10LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
60
--
--
--
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc)
CollectorEmitter Saturation Voltage
V
CE(sat)
--
--
0.5
Vdc
(I
C
= 4.0mAdc, I
B
= 0.4 mAdc)
BaseEmitter On Voltage
V
BE
--
--
0.95
Vdc
(I
C
= 4.0mAdc, V
CE
= 10Vdc)
SMALLSIGNAL CHARACTERISTICS
Current GainBandwidth Product
f
T
650
--
--
MHz
(V
CE
= 10 Vdc, I
C
= 4.0mAdc, f = 100MHz)
Collector Base Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
--
--
0.7
pF
Collector Base Feedback Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
rb
--
--
0.65
pF
Collector Base Time Constant
rb' C
C
--
--
9.0
ps
( I
C
= 4.0mAdc,V
CB
=10 Vdc, f = 31.8 MHz)
LESHAN RADIO COMPANY, LTD.
M333/4
MMBTH10LT1
b
fb
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 1. Rectangular Form
g
ib
(mmhos)
Figure 2. Polar Form
f, FREQUENCY (MHz)
Figure 3. Rectangular Form
g
fb
(mmhos)
Figure 4. Polar Form
y fb , FORWARD TRANSFER ADMITTANCE
COMMONBASE y PARAMETERS versus FREQUENCY
(V
CB
= 10 Vdc, I C = 4.0 mAdc, T
A
= 25C)
yib , INPUT ADMITTANCE
g
fb
g
ib
b
ib
jb
ib
(mmhos)
jb
fb
(mmhos)
y
ib
, INPUT ADMITT
ANCE(mmhos)
y
ib
, FOR
W
ARD TRANSFER ADMITT
ANCE (mmhos)
1000MHz
700
400
200
100
1000MHz
700
400
200
100
600
80
70
60
50
40
30
20
10
0
100
200
300
400
500
700
1000
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
80
70
60
50
40
30
20
10
0
10
20
30
100
200
300
400
500
700
1000
60
50
40
30
20
10
70
60
50
40
30
20
10
0
10
20
30
LESHAN RADIO COMPANY, LTD.
M334/4
MMBTH10LT1
b
ob
TYPICAL CHARACTERISTICS
COMMONBASE y PARAMETERS versus FREQUENCY
(V
CB
= 10 Vdc, I
C
= 4.0 mAdc, T
A
= 25C)
y
rb
, REVERSE TRANSFER ADMITTANCE
f, FREQUENCY (MHz)
Figure 5. Rectangular Form
g
rb
(mmhos)
Figure 6. Polar Form
y
ob
, OUTPUT ADMITTANCE
g
ob
(mmhos)
Figure 8. Polar Form
f , FREQUENCY (MHz)
Figure 7. Rectangular Form
jb
rb
(mmhos)
g
ob
b
rb
b
rb
g
rb
MPS H1
MPS H11
100
200
400
700
1000MHz
100
200
400
700
1000MHz
jb
ob
(mmhos)
y
ob
, OUTPUT ADMITT
ANCE (mmhos)
y
rb
, REVERSE TRANSFER ADMITT
ANCE (mmhos)
5.0
4.0
3.0
2.0
1.0
0
100
200
300
400
500
700
1000
0
1.0
2.0
3.0
4.0
5.0
2.0
1.8
1.2
0.8
0.4
0
0.4
0.8
1.2
1.6
2.0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
100
200
300
400
500
700
1000
10
8.0
6.0
4.0
2.0
0
0
2.0
4.0
6.0
8.0
10
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