LESHAN RADIO COMPANY, LTD.
Q11/7
MAXIMUM RATINGS
(T
A
= 2
5
C unless otherwise noted)
Rating
Symbol
Va l u e
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
Total Power Dissipation @ T
A
= 2
5
C
(1)
P
D
200
mW
Derate above 2
5
C
1.6
mW
/
C
THERMAL CHARACTERISTICS
Rating
Symbol
Va l u e
Unit
Thermal Resistance -- Junction-to-Ambient (surface mounted)
R
JA
625
C/W
Operating and Storage Temperature Range
T
J
, T
stg
65 to +150
C
Maximum Temperature for Soldering Purposes
T
L
260
C
Time in Solder Bath
10
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MMUN2111LT1
A6A
10
10
MMUN2112LT1
A6B
22
22
MMUN2113LT1
A6C
47
47
MMUN2114LT1
A6D
10
47
MMUN2115LT1
(2)
A6E
10
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
1
3
2
CASE 31808, STYLE 6
SOT 23 (TO236AB)
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis-
tor with a monolithic bias network consisting of two resistors; a series base resistor and a
base-emitter resistor.The BRT eliminates these individual components by integrating them
into a single device. The use of a BRT can reduce both system cost and board space. The
device is housed in the SOT-23 package which is
designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace "T1" with "T3" in the Device Number to order
the 13 inch/10,000 unit reel
R1
R2
PIN3
Collector
(output)
PIN1
base
(Input)
PIN2
Emitter
(Ground)
8
PNP SILICON
B I A S R E S I S T O R
TRANSISTOR
LESHAN RADIO COMPANY, LTD.
Q12/7
DEVICE MARKING AND RESISTOR VALUES
(Continued)
Device
Marking
R1 (K)
R2 (K)
MMUN2116RLT1
(2)
A6F
4.7
MMUN2130RLT1
(2)
A6G
1.0
1.0
MMUN2131RLT1
(2)
A6H
2.2
2.2
MMUN2132RLT1
(2)
A6J
4.7
4.7
MMUN2133RLT1
(2)
A6K
4.7
47
MMUN2134RLT1
(2)
A6L
22
47
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
=50V, I
E
= 0)
I
CBO
-
-
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
-
-
500
nAdc
Emitter-Base Cutoff Current
MMUN2111RLT1
I
EBO
-
-
0.5
mAdc
(V
EB
= 6.0 V, I
C
= 0)
MMUN2112RLT1
-
-
0.2
MMUN2113RLT1
-
-
0.1
MMUN2114RLT1
-
-
0.2
MMUN2115RLT1
-
-
0.9
MMUN2116RLT1
-
-
1.9
MMUN2130RLT1
-
-
4.3
MMUN2131RLT1
-
-
2.3
MMUN2132RLT1
-
-
1.5
MMUN2133RLT1
-
-
0.18
MMUN2134RLT1
-
-
0.13
Collector-Base Breakdown Voltage (I
C
= 10
A, I
E
= 0)
V
(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage
(3)
(I
C
=2.0mA, I
B
=0)
V
(BR)CEO
50
-
-
Vdc
ON CHARACTERISTICS
(3)
DC Current Gain
MMUN2111RLT1
h
FE
35
60
-
(V
CE
= 10 V, I
C
= 5.0 mA)
MMUN2112RLT1
60
100
-
MMUN2113RLT1
80
140
-
MMUN2114RLT1
80
140
-
MMUN2115RLT1
160
250
-
MMUN2116RLT1
160
250
-
MMUN2130RLT1
3.0
5.0
-
MMUN2131RLT1
8.0
15
-
MMUN2132RLT1
15
27
-
MMUN2133RLT1
80
140
-
MMUN2134RLT1
80
130
-
Collector-Emitter Saturation Voltage (I
C
=10mA, I
E
=0.3mA)
V
CE(sat)
-
-
0.25
Vdc
(I
C
= 10 mA, I
B
= 5 mA) MMUN2130RLT1
MMUN2131RLT1
(I
C
= 10 mA, I
B
= 1 mA) MMUN2115RLT1
MMUN2116RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
Output Voltage (on)
V
OL
Vdc
(V
CC
=5.0V,V
B
=2.5V, R
L
=1.0k
)
MMUN2111RLT1
-
-
0.2
MMUN2112RLT1
-
-
0.2
MMUN2114RLT1
-
-
0.2
MMUN2115RLT1
-
-
0.2
MMUN2116RLT1
-
-
0.2
MMUN2130RLT1
-
-
0.2
MMUN2131RLT1
-
-
0.2
MMUN2132RLT1
-
-
0.2
MMUN2133RLT1
-
-
0.2
MMUN2134RLT1
-
-
0.2
(V
CC
=5.0V,V
B
=3.5V, R
L
= 1.0k
)
MMUN2113RLT1
-
-
0.2
2. New devices. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
2-446 LRC Small-Signal Transistors, FETs and Diodes Device Data
MMUN2111RLT1 SERIES
8
LESHAN RADIO COMPANY, LTD.
Q13/7
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
M a x
Unit
Output Voltage (off) (V
CC
= 5.0V, V
B
= 0.5 V, R
L
= 1.0k
)
V
OH
4.9
--
--
Vdc
(V
CC
= 5.0V, V
B
= 0.25 V, R
L
=1.0k
)
MMUN2115RLT1
MMUN2116RLT1
MMUN2131RLT1
MMUN2132RLT1
(V
CC
=5.0 V,V
B
=0.050V,R
L
=1.0k
)
MMUN2130RLT1
Input Resistor
MMUN2111RLT1
R
1
7.0
10
13
k
MMUN2112RLT1
15.4
22
28.6
MMUN2113RLT1
32.9
47
61.1
MMUN2114RLT1
7.0
10
13
MMUN2115RLT1
7.0
10
13
MMUN2116RLT1
3.3
4.7
6.1
MMUN2130RLT1
0.7
1.0
1.3
MMUN2131RLT1
1.5
2.2
2.9
MMUN2132RLT1
3.3
4.7
6.1
MMUN2133RLT1
3.3
4.7
6.1
MMUN2134RLT1
15.4
22
28.6
Resistor Ratio MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1
R
1
/R
2
0.8
1.0
1.2
MMUN2114RLT1
0.17
0.21
0.25
MMUN2115RLT1 MMUN2116RLT1
--
--
--
MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1
0.8
1.0
1.2
MMUN2133RLT1
0.055
0.1
0.185
MMUN2111RLT1 SERIES
LESHAN RADIO COMPANY, LTD.
Q14/7
1000
100
10
1
10
100
4
3
2
1
0
0
10
20
30
40
50
250
200
150
100
50
0
50
0
50
10
150
1
0.1
0.01
MMUN2111RLT1 SERIES
T
A
= 25C
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111RLT1
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
V
in
, INPUT VOL
T
AGE (VOL
TS)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
V
in
, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
P
D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
V
CE( sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
T
S
)
C ob , CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
0
20
40
60
80
100
10
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
100
10
1
0.1
0
10
20
30
40
50
25C
T
A
=75C
25C
75C
25C
T
A
= 25C
25C
75C
f = 1 MHz
l
E
= 0 V
T
A
= 25C
V
O
= 5 V
I
C
/I
B
=10
V
CE
= 10 V
T
A
= 25C
25C
75C
V
O
= 0.2 V
R
JA
= 625C/W
LESHAN RADIO COMPANY, LTD.
Q15/7
MMUN2111RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112RLT1
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
versus I
C
1000
100
10
1
10
100
4
3
2
1
0
0
10
20
30
40
50
10
1
0.1
0.01
T
A
= 25C
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
CE( sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
T
S
)
C ob , CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
0
20
40
60
80
100
10
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
100
10
1
0.1
0
10
20
30
40
50
25C
T
A
=75C
25C
75C
25C
T
A
= 25C
25C
75C
f = 1 MHz
l
E
= 0 V
T
A
= 25C
V
O
= 5 V
I
C
/I
B
=10
V
CE
= 10 V
T
A
= 25C
25C
75C
V
O
= 0.2 V
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
V
in
, INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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