LESHAN RADIO COMPANY, LTD.
MMUN2111LT1 Series
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
R
1
R
2
MARKING DIAGRAM
A6x
M
A6x = Device Marking
x
= A L(See Page 2)
M
= Date Code
1
3
2
CASE 318, STYLE 6
SOT23 (TO236AB)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of this
data sheet.
MMUN2111LT1
SERIES
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
C
Derate above 25
C
P
D
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
C/W
Thermal Resistance
Junction-to-Ambient
R
JA
508 (Note 1.)
311 (Note 2.)
C/W
Thermal Resistance
Junction-to-Lead
R
JL
174 (Note 1.)
208 (Note 2.)
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
C
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
MMUN2111S-1/11
LESHAN RADIO COMPANY, LTD.
MMUN2111S2/11
MMUN2111LT1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MMUN2111LT1
MMUN2111LT3
SOT23
A6A
10
10
3000/Tape & Reel
10,000/Tape & Reel
MMUN2112LT1
MMUN2112LT3
SOT23
A6B
22
22
3000/Tape & Reel
10,000/Tape & Reel
MMUN2113LT1
MMUN2113LT3
SOT23
A6C
47
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2114LT1
MMUN2114LT3
SOT23
A6D
10
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2115LT1 (Note 3.)
MMUN2115LT3
SOT23
A6E
10
3000/Tape & Reel
10,000/Tape & Reel
MMUN2116LT1 (Note 3.)
MMUN2116LT3
SOT23
A6F
4.7
3000/Tape & Reel
10,000/Tape & Reel
MMUN2130LT1 (Note 3.)
MMUN2130LT3
SOT23
A6G
1.0
1.0
3000/Tape & Reel
10,000/Tape & Reel
MMUN2131LT1 (Note 3.)
MMUN2131LT3
SOT23
A6H
2.2
2.2
3000/Tape & Reel
10,000/Tape & Reel
MMUN2132LT1 (Note 3.)
MMUN2132LT3
SOT23
A6J
4.7
4.7
3000/Tape & Reel
10,000/Tape & Reel
MMUN2133LT1 (Note 3.)
MMUN2133LT3
SOT23
A6K
4.7
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2134LT1 (Note 3.)
MMUN2134LT3
SOT23
A6L
22
47
3000/Tape & Reel
10,000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
Emitter-Base Cutoff Current
MMUN2111LT1
(V
EB
= 6.0 V, I
C
= 0 )
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
A, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (Note 4.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
3. New devices. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
LESHAN RADIO COMPANY, LTD.
MMUN2111S3/11
MMUN2111LT1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 5.)
DC Current Gain
MMUN2111LT1
(V
CE
= 10 V, I
C
= 5.0 mA )
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MMUN2130LT1/MMUN2131LT1
(I
C
= 10 mA, I
B
= 1 mA) MMUN2115LT1/MMUN2116LT1/
MMUN2132LT1/MMUN2133LT1/MMUN2134LT1
V
CE(sat)
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
)
MMUN2111LT1
MMUN2112LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
)
MMUN2113LT1
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
)
MMUN2115LT1
MMUN2116LT1
MMUN2131LT1
MMUN2132LT1
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k
)
MMUN2130LT1
V
OH
4.9
Vdc
Input Resistor
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
k
Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1
MMUN2114LT1
MMUN2115LT1/MMUN2116LT1
MMUN2130LT1/MMUN2131LT1/MMUN2132LT1
MMUN2133LT1
R
1
/R
2
0.8
0.17
0.8
0.055
1.0
0.21
1.0
0.1
1.2
0.25
1.2
0.185
5. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
LESHAN RADIO COMPANY, LTD.
MMUN2111S4/11
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
100
10
1
0.1
0.01
0.001
0
Vin, INPUT VOLTAGE (VOLTS)
I C
, COLLECT
OR CURRENT
(mA)
TA = -25
C
25
C
1
2
3
4
5
6
7
8
9
10
0.01
20
IC, COLLECTOR CURRENT (mA)
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
0.1
1
0
40
60
80
1000
1
10
100
IC, COLLECTOR CURRENT (mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
TA = 75
C
-25
C
100
10
75
C
50
0
10
20
30
40
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
0
TA = -25
C
25
C
75
C
f = 1 MHz
lE = 0 V
TA = 25
C
VO = 5 V
IC/IB = 10
VCE = 10 V
0
IC, COLLECTOR CURRENT (mA)
0.1
V in
, INPUT
VOL
T
AGE (VOL
TS)
1
10
100
10
20
30
40
50
TA = -25
C
25
C
75
C
VO = 0.2 V
Figure 1. Derating Curve
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
R
JA = 625
C/W
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
25
C
MMUN2111LT1 Series
LESHAN RADIO COMPANY, LTD.
MMUN2111S5/11
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
h FE
, DC CURRENT
GAIN (NORMALIZED) 100
10
1
100
TA = 75
C
25
C
-25
C
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
0
10
20
30
TA = -25
C
75
C
V in
, INPUT
VOL
T
AGE (VOL
TS)
100
10
1
0.1
40
50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1
2
3
4
Vin, INPUT VOLTAGE (VOLTS)
75
C
25
C
TA = -25
C
I C
, COLLECT
OR CURRENT
(mA)
5
6
7
8
9
10
Figure 11. Input Voltage versus Output Current
0.01
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0
20
60
80
75
C
25
C
TA = -25
C
50
0
10
20
30
40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
25
C
f = 1 MHz
lE = 0 V
TA = 25
C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE = 10 V
LESHAN RADIO COMPANY, LTD.
MMUN2111S6/11
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2113LT1
Figure 12. VCE(sat) versus IC
100
10
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
V in
, INPUT
VOL
T
AGE (VOL
TS)
TA = -25
C
25
C
75
C
50
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
0.01
0.001
0
10
I C
, COLLECT
OR CURRENT
(mA)
25
C
Vin, INPUT VOLTAGE (VOLTS)
-25
C
Figure 15. Output Current versus Input Voltage
h FE
, CURRENT
GAIN (NORMALIZED)
1000
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
25
C
-25
C
Figure 16. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0
10
20
30
40
75
C
25
C
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
1
2
3
4
5
6
7
8
9
f = 1 MHz
lE = 0 V
TA = 25
C
VO = 5 V
VO = 2 V
IC/IB = 10
TA = 75
C
TA = 75
C
TA = -25
C
LESHAN RADIO COMPANY, LTD.
MMUN2111S7/11
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2114LT1
35
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0
10
20
30
40
50
100
10
1
0
2
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8 10 15 20 25 30
40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0
20
40
60
80
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
Figure 18. DC Current Gain
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
C ob
, CAP
ACIT
ANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
f = 1 MHz
lE = 0 V
TA = 25
C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
TA = -25
C
75
C
25
C
TA = 75
C
25
C
-25
C
VO = 5 V
VO = 0.2 V
TA = -25
C
25
C
75
C
IC/IB = 10
h FE
, DC CURRENT
GAIN (NORMALIZED)
1
10
100
IC, COLLECTOR CURRENT (mA)
-25
C
25
C
TA = 75
C
VCE = 10 V
180
160
140
120
100
80
60
40
20
0
2
4
6
8
15 20 40 50 60 70 80 90
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