LESHAN RADIO COMPANY, LTD.
MMVL105GT11/2
PLASTIC, CASE 477
SOD 323
1
2
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
V
R
Continuous Reverse Voltage
30
Vdc
I
F
Peak Forward Current
200
mAdc
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Unit
P
D
Total Device Dissipation FR -5 Board,* 200 mW
T
A
= 25C
Derate above 25C 1.57 mW/C
R
JA
Themal Resistance Junction toAmbient 635 C/W
T
J,
T
stg
Junction and Storage Temperature 150 C
*FR4 Minimum Pad
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse BreakdownVoltage
V
(BR)R
30
--
Vdc
(I
R
= 10
Adc)
Reverse Voltage Leakage Current I
R
-- 50 nAdc
(V
R
= 28 Vdc)
C
t
Q C
R
,
V
R
= 25 Vdc, f = 1.0 MHz V
R
= 3.0 Vdc C
3
/C
25
pF f = 50 MHz f = 1.0 MHz
Device Type Min Max Typ Min Max
MMVL105T1
1.5
2.8
250
4.0
6.5
This device is designed in the Surface Mount package for general frequency
control and tuning applications. It provides solidstate reliability in replacement
of mechanical tuning methods.
Controlled and Uniform Tuning Ratio
Device Marking: M4E
MMVL105GT1
30 VOLT
VOLTAGE VARIABLE
CAPACITANCE DIODES
Silicon Tuning Diode
ORDERING INFORMATION
Device Package
MMVL105GT1 SOD323 3000 / Tape & Reel
Shipping
2
ANODE
1
CATHODE
LESHAN RADIO COMPANY, LTD.
MMVL105GT12/2
MMVL105GT1
TYPICAL CHARACTERISTICS
Figure 1. Diode Capacitance
20
16
12
8.0
4.0
0
0.3
1.0
10
20 30
V
R
, REVERSE VOLTAGE (VOLTS)
C
T
, DIODE CAP
ACIT
ANCE
(pF)
Figure 2. Figure of Merit
f, FREQUENCY (MHz)
Figure 3. Diode Capacitance
T
A
, AMBIENT TEMPERATURE (
C)
Q, FIGURE OF MERIT
10
1000
100
10
100
1000
C
T
, DIODE CAP
ACIT
ANCE
(NORMALIZED)
1.04
75
1.02
1.00
0.98
0.96
25
+25
+75
+125
V
R
= 3.0 Vdc
f = 1.0 MHz
18
14
10
6.0
2.0
f = 1.0 MHz
T
A
= 25
C
V
R
= 3 Vdc
T
A
= 25
C
50
0
+50
+100
1.03
1.01
0.99
0.97
0.5
2.0 3.0
5.0
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