LESHAN RADIO COMPANY, LTD.
MMVL109T11/2
PLASTIC, CASE 477
SOD 323
1
2
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
V
R
Continuous Reverse Voltage
30
Vdc
I
F
Peak Forward Current
200
mAdc
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Unit
P
D
Total Device Dissipation FR5 Board,*
200
mW
T
A
= 25C
Derate above 25C
1.57
mW/C
R
JA
Thermal Resistance Junction to Ambient
635
C/W
T
J
, T
stg
Junction and Storage Temperature Range
-55 to +150
C
*FR5 Minimum Pad
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse BreakdownVoltage
V
(BR)R
30
--
--
Vdc
(I
R
= 10
Adc)
Rev
erse Voltage Leakage Current
I
R
--
--
0.1
Adc
(V
R
= 25 Vdc)
Diode Capacitance Temperature Coefficient
TC
C
--
300
--
ppm/C
(V
R
= 3.0 Vdc, f = 1.0 MHz)
C
t
, Diode Capacitance
Q, Figure of Merit
C
R
, Capacitance Ratio
V
R
= 3.0 Vdc, f = 1.0 MHz
V
R
= 3.0 Vdc
C
3
/C
25
pF
f = 50 MHz
f = 1.0 MHz(Note 1)
Device
Min
Nom
Max
Min
Min
Max
MMVL109T1
26
29
32
200
5.0
6.5
1. C
R
is the ratio of C
t
measured at 3 Vdc divided by C
t
measured at 25 Vdc.
Designed for general frequency control and tuning applications;
providing solidstate reliability in replacement of mechnaical tuning
methods.
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Surface Mount Package
Device Marking: 4A
MMVL109T1
2632 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
Silicon Epicap Diode
ORDERING INFORMATION
Device
Package
Shipping
MMVL109T1
SOD323
3000 / Tape & Reel
2
ANODE
1
CATHODE
LESHAN RADIO COMPANY, LTD.
MMVL109T12/2
MMVL109T1
TYPICAL CHARACTERISTICS
Figure 1. DIODE CAPACITANCE
40
32
24
16
8
0
1
3
10
30
100
VR, REVERSE VOLTAGE (VOLTS)
C
T
,
CA
P
ACIT
ANCE
pF
Figure 2. FIGURE OF MERIT
f, FREQUENCY (MHz)
Figure 3. LEAKAGE CURRENT
TA, AMBIENT TEMPERATURE
Figure 4. DIODE CAPACITANCE
TA, AMBIENT TEMPERATURE
Q, FIGURE OF MERIT
10
1000
100
10
100
1000
,
REVER
S
E
C
U
RRENT
(n
A)
100
60
0.01
0.001
0
+40
+100
C
t
, DIODE CAP
ACIT
ANCE
(NORMALIZED)
1.04
75
1.02
1.00
0.98
0.96
25
+25
+75
+125
VR = 3.0 Vdc
f = 1.0 MHz
Ct [ Cc + Cj
36
28
20
12
4
f = 1.0 MHz
TA = 25
C
VR = 3 Vdc
TA = 25
C
VR = 20 Vdc
+120 +140
+80
+60
+20
40
20
I R
0.1
1.0
10
20
2.0
0.2
0.02
0.002
0.006
0.06
0.6
6.0
60
50
0
+50
+100
1.03
1.01
0.99
0.97
NOTES ON TESTING AND SPECIFICATIONS
1. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc.
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