LESHAN RADIO COMPANY, LTD.
MMVL3102T11/2
PLASTIC, CASE 477
SOD 323
1
2
2
ANODE
1
CATHODE
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
V
R
Continuous Reverse Voltage
30
Vdc
I
F
Peak Forward Current
200
mAdc
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Unit
P
D
Total Device Dissipation FR5 Board,*
200
mW
T
A
= 25C
Derate above 25C
1.57
mW/C
R
JA
Thermal Resistance Junction to Ambient
635
C/W
T
J
, T
stg
Junction and Storage Temperature
150
C
*FR4 Minimum Pad
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse BreakdownVoltage V
(BR)R
30 -- -- Vdc
(I
R
= 10
Adc)
Rev
erse Voltage Leakage Current
I
R
--
--
0.1
Adc
(V
R
= 25 Vdc, T
A
= 25C)
Diode Capacitance Temperature Coefficient
TC
C
--
300
--
ppm/C
(V
R
= 4.0 Vdc, f = 1.0 MHz)
C
t
, Diode Capacitance
Q, Figure of Merit
C
R
, Capacitance Ratio
V
R
= 3.0 Vdc, f = 1.0 MHz
V
R
= 3.0 Vdc
C
3
/C
25
pF
f = 50 MHz
f = 1.0 MHz
Device
Min
Nom
Max
Min
Min
Max
MMVL3102T1
20
22
25
200
4.5
4.8
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solidstate reliability
in replacement of mechanical tuning methods.
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Device Marking: 4C
MMVL3102T1
22 pF (Nominal) 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODE
Silicon Tuning Diode
ORDERING INFORMATION
Device
Package
Shipping
MMVL3102T1
SOD323
3000 / Tape & Reel
LESHAN RADIO COMPANY, LTD.
MMVL3102T12/2
MMVL3102T1
TYPICAL CHARACTERISTICS
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
T
A
, AMBIENT TEMPERATURE (
C)
Figure 4. Diode Capacitance
T
A
, AMBIENT TEMPERATURE (
C)
Q, FIGURE OF MERIT
(x 1000)
0
20
2.0
10
15
30
, REVERSE CURRENT
(nA)
100
-60
0.01
0.001
0
+100
C
T, DIODE CAP
ACIT
ANCE (NORMALIZED)
1.04
-75
1.02
1.00
0.98
0.96
-25
+25
+75
+125
V
R
= 3.0 Vdc
f = 1.0 MHz
T
A
= 25
C
f = 50 MHz
V
R
= 20 Vdc
+140
+60
+20
-20
I R
0.1
1.0
10
-50
0
+50
+100
1.03
1.01
0.99
0.97
NOTES ON TESTING AND SPECIFICATIONS
1. C
R
is the ratio of C
T
measured at 3.0 Vdc divided by C
T
measured at 25 Vdc.
40
32
24
16
8.0
0
0.3
1.0
10
20 30
V
R
, REVERSE VOLTAGE (VOLTS)
C T
, DIODE CAP
ACIT
ANCE (pF)
36
28
20
12
4.0
f = 1.0 MHz
T
A
= 25
C
0.5
2.0 3.0
5.0
3.0
5.0
1.0
0.5
0.3
0.2
3.0
18
6.0
21
9.0
24
12
27
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