LESHAN RADIO COMPANY, LTD.
P11/7
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted)
Rating
Symbol
Va l u e
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
Total Power Dissipation @ T
A
= 25
C
(1)
P
D
200
mW
Derate above 25
C
1.6
mW
/
C
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance -- Junction-to-Ambient (surface mounted)
R
JA
625
C/W
Operating and Storage Temperature Range
T
J
, T
stg
65 to +150
C
Maximum Temperature for Soldering Purposes
T
L
260
C
Time in Solder Bath
10
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MUN2111RT1
6A
10
10
MUN2112RT1
6B
22
22
MUN2113RT1
6C
47
47
MUN2114RT1
6D
10
47
MUN2115RT1
(2)
6E
10
MUN2116RT1
(2)
6F
4.7
MUN2130RT1
(2)
6G
1.0
1.0
MUN2131RT1
(2)
6H
2.2
2.2
MUN2132RT1
(2)
6J
4.7
4.7
MUN2133RT1
(2)
6K
4.7
47
MUN2134R T1
(2)
6L
22
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
1
3
2
CASE 31803 , STYLE 1
( SC 59 )
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors; a series
base resistor and a baseemitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC59 package
which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC59 package can be soldered using wave or reflow.
The modified gullwinged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
R1
R2
PIN3
Collector
(Output)
PIN2
base
(Input)
PIN2
Emitter
(Ground)
8
PNP SILICON
BIAS RESISTOR
TRANSISTOR
8
LESHAN RADIO COMPANY, LTD.
P12/7
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
=50V, I
E
= 0)
I
CBO
-
-
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
-
-
500
nAdc
Emitter-Base Cutoff Current
MUN2111RT1
I
EBO
-
-
0.5
mAdc
(V
EB
= 6.0 V, I
C
= 0)
MUN2112RT1
-
-
0.2
MUN2113RT1
-
-
0.1
MUN2114RT1
-
-
0.2
MUN2115RT1
-
-
0.9
MUN2116RT1
-
-
1.9
MUN2130RT1
-
-
4.3
MUN2131RT1
-
-
2.3
MUN2132RT1
-
-
1.5
MUN2133RT1
-
-
0.18
MUN2134RT1
-
-
0.13
Collector-Base Breakdown Voltage (I
C
= 10
A, I
E
= 0)
V
(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage
(3)
(I
C
=2.0mA, I
B
=0)
V
(BR)CEO
50
-
-
Vdc
ON CHARACTERISTICS
(3)
DC Current Gain
MUN2111RT1
h
FE
35
60
-
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN2112RT1
60
100
-
MUN2113RT1
80
140
-
MUN2114RT1
80
140
-
MUN2115RT1
160
250
-
MUN2116RT1
160
250
-
MUN2130RT1
3.0
5.0
-
MUN2131RT1
8.0
15
-
MUN2132RT1
15
27
-
MUN2133RT1
80
140
-
MUN2134RT1
80
130
-
Collector-Emitter Saturation Voltage (I
C
=10mA, I
E
=0.3mA)
V
CE(sat)
Vdc
(I
C
= 10 mA, I
B
= 0.3 mA)
MUN2111RT1 MUN2112RT1
-
-
0.25
MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2130RT1
(I
C
= 10 mA, I
B
= 5.0 mA)
MUN2131RT1
-
-
0.25
(I
C
= 10 mA, I
B
= 1.0 mA)
MUN2116RT1 MUN2132RT1
-
-
0.25
MUN2134RT1
Output Voltage (on)
V
OL
Vdc
(V
CC
=5.0V,V
B
=2.5V, R
L
=1.0k
)
MUN2111RT1
MUN2112RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1
-
-
0.2
MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1
MUN2134RT1
(V
CC
=5.0V,V
B
=3.5V, R
L
= 1.0k
)
MUN2113RT1
-
-
0.2
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
MUN2111RT1 SERIES
LESHAN RADIO COMPANY, LTD.
P13/7
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
M a x
Unit
Output Voltage (off) (V
CC
= 5.0V, V
B
= 0.5 V, R
L
= 1.0k
)
V
OH
4.9
--
--
Vdc
(V
CC
= 5.0V, V
B
= 0.050 V, R
L
=1.0k
)
MUN2130RT1
(V
CC
= 5.0V, V
B
= 0.25 V, R
L
=1.0k
)
MUN2115RT1
MUN2116RT1
MUN2131RT1
MUN2132RT1
Input Resistor
MUN2111RT1
R
1
7.0
10
13
k
MUN2112RT1
15.4
22
28.6
MUN2113RT1
32.9
47
61.1
MUN2114RT1
7.0
10
13
MUN2115RT1
7.0
10
13
MUN2116RT1
3.3
4.7
6.1
MUN2130RT1
0.7
1.0
1.3
MUN2131RT1
1.5
2.2
2.9
MUN2132RT1
3.3
4.7
6.1
MUN2133RT1
3.3
4.7
6.1
MUN2134RT1
15.4
22
28.6
Resistor Ratio MUN2111RT1 MUN2112RT1 MUN2113RT1
R
1
/R
2
0.8
1.0
1.2
MUN2114RT1
0.17
0.21
0.25
MUN2115RT1 MUN2116RT1
--
--
--
MUN2130RT1 MUN2131RT1 MUN2132RT1
0.8
1.0
1.2
MUN2133RT1
0.055
0.1
0.185
MUN2134RT1
0.38
0.47
0.56
MUN2111RT1 SERIES
LESHAN RADIO COMPANY, LTD.
P14/7
1000
100
10
1
10
100
4
3
2
1
0
0
10
20
30
40
50
250
200
150
100
50
0
50
0
50
10
150
1
0.1
0.01
MUN2111RT1 SERIES
T
A
= 25C
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2111RT1
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
V
in
, INPUT VOL
T
AGE (VOL
TS)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
V
in
, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
P
D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
V
CE( sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
T
S
)
C ob , CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
0
20
40
60
80
100
10
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
100
10
1
0.1
0
10
20
30
40
50
25C
T
A
=75C
25C
75C
25C
T
A
= 25C
25C
75C
f = 1 MHz
l
E
= 0 V
T
A
= 25C
V
O
= 5 V
I
C
/I
B
=10
V
CE
= 10 V
T
A
= 25C
25C
75C
V
O
= 0.2 V
R
JA
= 625C/W
LESHAN RADIO COMPANY, LTD.
P15/7
MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2112RT1
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
versus I
C
1000
100
10
1
10
100
4
3
2
1
0
0
10
20
30
40
50
10
1
0.1
0.01
T
A
= 25C
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
CE( sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
T
S
)
C ob , CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
0
20
40
60
80
100
10
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
100
10
1
0.1
0
10
20
30
40
50
25C
T
A
=75C
25C
75C
25C
T
A
= 25C
25C
75C
f = 1 MHz
l
E
= 0 V
T
A
= 25C
V
O
= 5 V
I
C
/I
B
=10
V
CE
= 10 V
T
A
= 25C
25C
75C
V
O
= 0.2 V
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
V
in
, INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
LESHAN RADIO COMPANY, LTD.
P16/7
MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2113RT1
I
C
, COLLECTOR CURRENT (mA)
Figure 12. V
CE(sat)
versus I
C
1000
100
10
1
10
100
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
1
0.1
0.01
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
CE( sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
T
S
)
C ob , CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
0
10
20
30
40
100
10
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
100
10
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
V
in
, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current versus Input Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
V
O
= 5 V
I
C
/I
B
=10
T
A
= 25C
75C
25C
T
A
=75C
25C
25C
V
O
= 0.2 V
f = 1 MHz
l
E
= 0 V
T
A
= 25C
25C
25C
T
A
= 75C
25C
75C
T
A
=25C
LESHAN RADIO COMPANY, LTD.
P17/7
MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2114RT1
I
C
, COLLECTOR CURRENT (mA)
Figure 17. V
CE(sat)
versus I
C
180
160
140
120
100
80
60
40
20
0
1
2
4
6
8
10
15
20
40
50
60
70
80
90
100
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
1
0.1
0.01
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
CE( sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
T
S
)
C ob , CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
0
10
20
30
40
100
10
1
0
1
2
3
4
5
6
7
8
9
10
10
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
V
in
, INPUT VOLTAGE (VOLTS)
Figure 20. Output Current versus Input Voltage
Figure 22. Inexpensive, Unregulated Current
Source
V
O
= 5 V
I
C
/I
B
=10
T
A
= 25C
75C
25C
V
CE
= 10V
T
A
=75C
25C
25C
f = 1 MHz
l
E
= 0 V
T
A
= 25C
0
2
4
6
8
10
15
20
25
30
35
40
45
50
25C
25C
T
A
= 75C
25C
T
A
= 25C
75C
V
O
= 0.2 V
Typical Application
for PNP BRTs
12 V
LOAD
I
C
, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
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