LESHAN RADIO COMPANY, LTD.
MUN5111T1 Series1/11
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
1
3
2
MUN5111T1
SERIES
CASE 419, STYLE 3
SOT323 (SC70)
PNP SILICON
BIAS RESISTOR
TRANSISTORS
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page2 of this data
sheet.
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a baseemitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system cost
and board space. The device is housed in the SC70/SOT323 package
which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC70/SOT323 package can be soldered using wave or reflow.
The modified gullwinged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace "T1" with "T3" in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (T
A
= 25C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
D
202 (Note 1)
mW
T
A
= 25C
310 (Note 2)
Derate above 25C
1.6 (Note 1)
C/W
2.5 (Note 2)
Thermal Resistance
R
JA
618 (Note 1)
C/W
Junction-to-Ambient
403 (Note 2)
Thermal Resistance
R
JL
280 (Note 1)
C/W
Junction-to-Lead
332 (Note 2)
Junction and Storage
T
J
, T
stg
55 to +150
C
Temperature Range
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
PIN 1
BASE
(INPUT)
PIN 2
COLLECTOR
(OUTPUT)
PIN 3
EMITTER
(GROUND)
R
1
R
2
MARKING DIAGRAM
6X
M
6 X =Specific Device Code
X
=(See Marking Table)
M
=Date Code
LESHAN RADIO COMPANY, LTD.
MUN5111T1 Series2/11
MUN5111T1 SERIES
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN5111T1
SC70/SOT323
6A
10
10
3000/Tape & Reel
MUN5112T1
SC70/SOT323
6B
22
22
3000/Tape & Reel
MUN5113T1
MUN5113T3
SC70/SOT323
6C
47
47
3000/Tape & Reel
10,000/Tape & Reel
MUN5114T1
SC70/SOT323
6D
10
47
3000/Tape & Reel
MUN5115T1 (Note 3)
SC70/SOT323
6E
10
3000/Tape & Reel
MUN5116T1 (Note 3)
SC70/SOT323
6F
4.7
3000/Tape & Reel
MUN5130T1 (Note 3)
SC70/SOT323
6G
1.0
1.0
3000/Tape & Reel
MUN5131T1 (Note 3)
SC70/SOT323
6H
2.2
2.2
3000/Tape & Reel
MUN5132T1 (Note 3)
SC70/SOT323
6J
4.7
4.7
3000/Tape & Reel
MUN5133T1 (Note 3)
SC70/SOT323
6K
4.7
47
3000/Tape & Reel
MUN5134T1 (Note 3)
SC70/SOT323
6L
22
47
3000/Tape & Reel
MUN5135T1 (Note 3)
SC70/SOT323
6M
2.2
47
3000/Tape & Reel
MUN5136T1
SC70/SOT323
6N
100
100
3000/Tape & Reel
MUN5137T1
SC70/SOT323
6P
47
22
3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
LESHAN RADIO COMPANY, LTD.
MUN5111T1 Series3/11
MUN5111T1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
CollectorEmitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
EmitterBase Cutoff Current
MUN5111T1
(V
EB
= 6.0 V, I
C
= 0)
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
CollectorBase Breakdown Voltage (I
C
= 10
A, I
E
= 0)
V
(BR)CBO
50
Vdc
CollectorEmitter Breakdown Voltage
(Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
MUN5111T1
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
CollectorEmitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN5130T1/MUN5131T1
(I
C
= 10 mA, I
B
= 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
V
CE(sat)
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
)
MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
)
MUN5113T1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k
)
MUN5136T1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k
)
MUN5137T1
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
4. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
LESHAN RADIO COMPANY, LTD.
MUN5111T1 Series4/11
MUN5111T1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k
)
MUN5130T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
)
MUN5115T1
MUN5116T1
MUN5131T1
MUN5132T1
V
OH
4.9
Vdc
Input Resistor
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k
Resistor Ratio
MUN5111T1/MUN5112T1/MUN5113T1/
MUN5136T1
MUN5114T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5137T1
R
1
/R
2
0.8
0.17
0.8
0.055
0.38
0.038
1.7
1.0
0.21
1.0
0.1
0.47
0.047
2.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
Figure 1. Derating Curve
250
200
150
100
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
R
JA
= 833
C/W
LESHAN RADIO COMPANY, LTD.
MUN5111T1 Series5/11
TYPICAL ELECTRICAL CHARACTERISTICS MUN5111T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
= -25
C
25
C
1
2
3
4
5
6
7
8
9
10
Figure 3. DC Current Gain
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
0.1
1
0
40
50
1000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
C
-25
C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10
20
30
40
50
T
A
= -25
C
25
C
75
C
75
C
I
C
/I
B
= 10
50
0
10
20
30
40
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
0
T
A
= -25
C
25
C
75
C
25
C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
MUN5111T1 SERIES
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