ChipFind - документация

Электронный компонент: MV2108

Скачать:  PDF   ZIP
LESHAN RADIO COMPANY, LTD.
MMBV2101~MMBV2109
1/3
MV2101~MV2115
1
3
2
CASE 31808, STYLE 8
SOT 23 (TO236AB)
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101
MV2104
MV2106
MV2108
MV2109
MV2111
MV2115
These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solidstate reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance
--
10%
Complete Typical Design Curves
Silicon Tuning Diode
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
M V 2 1 X X MMBV21XXLT1
Unit
Reverse Voltage
V
R
30
Vdc
Forward Current
I
F
200
mAdc
Forward power Dissipation @T
A
= 25C P
D
280 225 m W
Derate above 25C
2.8
1.8
mW/C
Junction Temperature
T
J
+150
C
Storage Temperature Range
T
stg
55 to +150
C
DEVICE MARKING
MMBV2101LT1=M4G MMBV2107LT1=4W
MMBV2103LT1=4H MMBV2108LT1=4X
MMBV2105LT1=4U MMBV2109LT1=4J
ELECTRICAL CHARACTERISTICS(T
A
=25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
(BR)R
30
--
--
Vdc
(I
R
=1.0
Adc)
Reverse Voltage Leakage Current
I
R
--
--
0.1
Adc
(V
R
=25Vdc,T
A
=25C)
Diode Capacitance Temperature Coefficient
TC
C
--
280
--
ppm/C
(V
R
=4.0Vdc,f=1.0MHz)
6 . 8 - 1 0 0 p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
CATHODE
1
ANODE
LESHAN RADIO COMPANY, LTD.
MMBV2101~MMBV2109
2/3
MV2101~MV2115
Min
Nom
M a x
Typ
Min
Typ
Max
MMBV2101LT1/MV2101
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2103LT1
9.0
10
11
400
2.5
2.9
3.2
MV2104
10.8
12
13.2
400
2.5
2.9
3.2
MMBV2105LT1/MV2105
13.5
15
16.5
400
2.5
2.9
3.2
MMBV2107LT1
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2108LT1/MV2108
24.3
27
29.7
300
2.5
3.0
3.2
MMBV2109LT1/MV2109
29.7
33
36.3
200
2.5
3.0
3.2
MV2111
42.3
47
51.7
150
2.5
3.0
3.2
MV2115
90
100
110
100
2.6
3.0
3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk.
Use the device title and drop the "T1" suffix when ordering any of these devices in bulk.
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
C
T
, Diode Capacitance
V
R
= 4.0 Vdc, f = 1.0 MHz
pF
T
R
, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Q, Figure of Merit
V
R
= 4.0 Vdc,
f = 50 MHz
PARAMETER TEST METHODS
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0 MHz using a
ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).
2. T
R
, TUNING RATIO
T
R
is the ratio of C
T
measured at 2.0 Vdc divided by
C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:
Q =
2
fC
G
(Booton Electronics Model 33As8 or equivalent).Use
Lead Length
~1/16".
4.T C
C
,DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TC
C
is guaranteed by comparing C
T
at V
R
=4.0Vdc,f=1.0MHz,
T
A
= 65
C
with C
T
at V
R
=4.0Vdc,f=1.0MHz,T
A
= +85
C
in the
following equation,which defines TC
C
:
C
T
(+85
C
) C
T
(65
C
)
10
6
TC
C
=
85+65
.
C
T
(25
C
)
Accuracy limited by measurement of C
T
to0.1pF.
Device
~
LESHAN RADIO COMPANY, LTD.
MMBV2101~MMBV2109
3/3
MV2101~MV2115
TYPICAL DEVICE CHARACTERISTICS
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
Figure 1. Diode Capacitance versus Reverse Voltage
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
Figure 3. Reverse Current versus Reverse Bias
Voltage
Figure 4. Figure of Merit versus Reverse Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
2.0
0.2
10
30
20
1.0
2.0
5.0
10
1000
50
20
100
500
5.0
0.5
0.1
200
C
T, DIODE CAP
ACIT
ANCE (pF)
MMBV2109LT1/MV2109
1.040
1.030
1.020
1.010
1.000
0.990
0.980
T
J
, JUNCTION TEMPERATURE (
C)
+125
-75
-25
0
+25
+50
-50
+75
NORMALIZED DIODE CAP
ACIT
ANCE
+100
0.970
0.960
V
R
= 2.0 Vdc
V
R
= 4.0 Vdc
V
R
= 30 Vdc
100
50
20
10
5.0
0.01
V
R
, REVERSE VOLTAGE (VOLTS)
5.0
10
20
15
25
I
30
, REVERSE CURRENT
(nA)
R
0.02
0.05
0.10
0.20
0.50
1.0
2.0
T
A
= 125
C
T
A
= 75
C
T
A
= 25
C
100
200
500
1000
5000
2000
1.0
2.0
5.0
7.0
10
3.0
20
V
R
, REVERSE VOLTAGE (VOLTS)
Q, FIGURE OF MERIT
2000
1000
200
500
300
100
f, FREQUENCY (MHz)
10
30
50
70
Q, FIGURE OF MERIT
100
3000
50
30
20
10
20
200 250
T
A
= 25
C
f = 50 MHz
MV2115
T
A
= 25
C
V
R
= 4.0 Vdc
MV2115
Figure 5. Figure of Merit versus Frequency
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
3.0
0.3
0
10
20
50
300
3000
30
30
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
5000
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
NORMALIZED TO C
T
at T
A
= 25
C
V
R
= (CURVE)
MV2115