North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 4.0
Ordering Information
Part Number
Package
AM42-0007
Ceramic Bolt Down Package
Electrical Specifications:
T
C
= +25C, VDD = +9V, VGG = -5.0V, Z
0
= 50
,
,
,
,
=
=
=
=
Frequency = 14.0-14.5 GHz
Parameter Abbv.
Test
Conditions
Units
Min.
Typ.
Max.
Linear Gain
G
L
P
IN
0 dBm
dB 19 22
--
Input VSWR
VSWR
IN
P
IN
0 dBm
-- -- 2.5:1 2.7:1
Output VSWR
VSWR
OU
T
P
IN
0 dBm
-- -- 2.7:1 --
Saturated Output Power
P
SAT
P
IN
=
+14 dBm
dBm -- 33
--
Output Power @
P
1dB
-- dBm
31
32
--
Output IP
3
IP
3
(Refer to Note 1)
dBm
--
41
--
Power Added Efficiency
PAE
P
IN
=
+14 dBm
% -- 22 --
Bias Currents
I
GG
P
IN
=
+14 dBm
mA 18 25
Thermal Resistance
JC
25C Heat Sink
C/W
--
9.5
--
Detector Output Voltage
V
det
R
L
=10K
, P
OUT
=+31dBm
V -- +3.5 --
CR-15
Features
High Linear Gain: 22 dB Typ.
High Saturated Output Power: +33 dBm Typ.
High Power Added Efficiency: 22% Typ.
High P
1dB
: 32 dBm Typ.
50
=Input/Output Broadband Matched
Integrated Output Power Detector
High Performance Ceramic Bolt Down Package
Description
M/A-COM's AM42-0007 is a three-stage MMIC linear power
amplifier in a ceramic bolt down style hermetic package. The
AM42-0007 employs a fully matched chip with internally
decoupled Gate and Drain bias networks and an ouput power
detector. The AM42-0007 is designed to be operated from a
constant voltage Drain supply.
The AM42-0007 is designed for use as an output stage or a
driver, in applications for VSAT systems. This design is fully
monolithic and requires a minimum of external components.
M/A-COM's AM42-0007 is fabricated using a mature 0.5
micron GaAs MESFET process. The process features full
passivation for increased performance and reliability. This
product is 100% RF tested to ensure compliance to performance
specifications.
Notes: (unless otherwise specified)
1. Dimensions are in inches.
2. Tolerance: .XXX = 0.005
.XX = 0.010
IP
3
is measured with two +24 dBm output tones @ 1 MHz spacing.
AM42-0007
GaAs MMIC VSAT Power Amplifier 2.0W
14.0 - 14.5 GHz
CERAMIC
BASE PLATE
4X .06 X 45
CHAMFER
6
5
4
3
2
1
7
8
9
10
.010 SQ.
ORIENTATION TAB
2X o .096 THRU
o.004 M
A B C
.090 MAX
.33
.005 .002
.030
.318 .010
.328 .010
.050 MIN.
10
X
.530
.70
.159
.010 .003
10
X
.040
.100
4X
.115 .010
.050
4X
.085
- C -
- B -
- A -
1
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 4.0
Typical Bias Configuration
3,4,7
Absolute Maximum Ratings
1,2,3,4
Parameter Absolute
Maximum
V
DD
12 Volts
V
GG
-10 Volts
Power Dissipation
13.2 W
RF Input Power
+23 dBm
Channel Temperature
150C
Storage Temperature
-65C to +150C
I
ds
2100 mA
1. Operation of this device outside any of these limits may cause
permanent damage.
2. Case Temperature (T
C
) = +25C.
3. Nominal bias is obtained by first connecting -5 volts to pin 4 (V
GG
),
followed by connection +9 volts to pin 6 (V
DD
). Note sequence.
4. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
5. No dc bias voltage appears at the RF ports.
6. The dc resistance at the input port is an open circuit and at the
ouput port is a short circuit.
7. For optimum IP
3
performance, the V
DD
bypass capacitors should
be placed within 0.5 inches of pin 6.
V
det
F
F
AM42-0007
F
3.3
0.01
0.01
10 K
3
IN
OUT
8
7
6
V
DD
V
GG
GND
1,2,5,9,10
4
Pin No.
Pin Name
Description
1
GND
DC and RF Ground
2
GND
DC and RF Ground
3
IN
RF Input
4
V
GG
Gate Supply
5
GND
DC and RF Ground
6
V
DD
Voltage Drain Supply
7
V
det
Output Power Detector
8
OUT
RF Output
9
GND
DC and RF Ground
10
GND
DC and RF Ground
Pin Configuration
2
GaAs MMIC VSAT Power Amplifier 2.0W, 14.0 - 14.5 GHz
AM42-0007
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 4.0
25
15
5
-5
-15
10
12
14
16
18
25
15
5
-5
-15
10
12
14
16
18
Li
near Gai
n
(dB
)
Frequency (GHz)
Linear Gain vs. Frequency
Input and Output Return Loss vs. Frequency
Frequency (GHz)
M
agni
t
ude (dB
)
S11
S22
35
33
31
29
27
25
0
50
40
30
20
10
0
4
8
12
16
6
5
4
3
2
1
0
19
21
23
25
27
29
31
33
Output Power vs. Input Power
@ 14.25 GHz
Detector Voltage vs. Output Power
@ 14.25 GHz
P
IN
(dBm)
P
OU
T
(dB
m
)
V
DE
T
(V
)
P
OUT
(dBm)
20
12
13
14
15
16
0
10
30
40
50
35
33
31
29
27
25
12
13
14
15
16
Frequency (GHz)
P
OU
T
(dB
m
)
Frequency (GHz)
PA
E (
%
)
Output Power vs. Frequency
@ P
IN
= +14 dBm
Power Added Efficiency vs. Frequency
@ P
IN
= +14 dBm
Typical Performance @ +25C
Test Conditions are listed in the section "Electrical Specifications".
P
OUT
PAE
3
GaAs MMIC VSAT Power Amplifier 2.0W, 14.0 - 14.5 GHz
AM42-0007
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