High Dynamic Range Low Noise Amplifier
800 - 1000 MHz

AM50-0003

M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.

· North America Tel: 800.366.2266 / Fax: 978.366.2266
· Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
· Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

Features

· Low Noise Figure: 1.2 dB
· High Input: +18 dBm at 8 V, 60 mA bias
+6.5 dBm at 3 V, 20 mA bias
· High Gain: 15 dB

· Single Supply: +3 to +8 VDC
· Low Cost SOIC-8 Plastic Package
· Adjustable current: 20 to 80 mA with external

resistor

Description

M/A-COM's AM50-0003 is a high dynamic range,
GaAs MMIC, low noise amplifier in a low cost, SOIC
8-Lead, surface mount, plastic package. It employs
e x t e r n a l i n p u t m a t c h i n g t o o b t a i n

optimum noise figure performance and operating
frequency flexibility. The AM50-0003 also

features flexible biasing to control the current

consumption vs. dynamic range trade-off. The
AM50-0003 can operate from any supply voltage in
the 3V to 8V range. Its current can be

controlled over a range of 20 mA to 80 mA with an
external resistor.

The AM50-0003 is ideally suited for use where low
noise figure, high gain, high dynamic range, and low
power consumption are required. Typical

applications include receiver front ends in AMPS,
GSM, and ETACS base stations. It is also useful as
a gain block, buffer, driver, and IF amplifier in both
fixed and portable cellular and 900 MHz ISM
systems.

The AM50-0003 is fabricated using a low-cost 0.5-
micron gate length GaAs process. The process
features full passivation for increased performance
reliability. The AM50-0003 is 100% RF tested to
ensure performance specification compliance.

Pin Configuration

Pin No.

Pin

Name

Description

GND

RF and DC Ground

EXT

External Current Control (optional)

RF IN

RF Input of the amplifier

GND

RF and DC Ground

GND

RF and DC Ground

RF OUT

RF Output of the amplifier

Positive supply voltage

GND

RF and DC Ground

Ordering Information

Part Number

Package

AM50-0003

Bulk Packaging

AM50-0003TR

1000 piece reel

AM50-0003SMB

Sample Test Board

Note: Reference Application Note M513 for reel size
information.

Absolute Maximum Ratings

Parameter

Absolute Maximum

VDD

+10 VDC

Input Power

+17 dBm

Current

120 mA

Channel Temperature

+150°C

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

1. Exceeding any one or combination of these limits may cause

permanent damage.

2. When pin #2 is used to increase current. (see note 6)
3. Thermal resistance (

jc) = +88°C/W

Functional Block Diagram

GND

EXT

RF IN

GND

RF OUT

GND

High Dynamic Range Low Noise Amplifier
800 - 1000 MHz

AM50-0003

Electrical Specifications: T

= +25°C, Z

= 50 , F=900 MHz, P

= -30 dBm

Parameter

Test Conditions

Units

Min

Typ

Max

Gain

5 V, 60 mA

3 V, 20 mA

13.5

Noise Figure

5 V, 60 mA

1.20

1.50

3 V, 20 mA

1.25

1.50

Input VSWR

Ratio

2.0:1

Output VSWR

Ratio

1.5:1

Output 1 dB Compression

5 V, 60 mA

dBm

16.5

3 V, 20 mA

dBm

8.5

Input IP3

5 V, 60 mA

dBm

12.5

3 V, 20 mA

dBm

4.0

6.5

Reverse Location

4. Using external 15 Ohm resistor. See functional bolck diagram herein.

Component List

Part Value Case

Size

Manufacturer

Purpose

47 pF

0603

Murata

DC Block

470 pF

0603

Murata

By-Pass

12 nH

0603

Coilcraft

Tuning

12 nH

0603

Coilcraft

RF Choke

5.1K

Ohms

0603

Panasonic

DC Return

See

Note 6

0603

Panasonic

Optional current

control

5. All External circuitry parts are readily available, low cost

surface mount components (.060 in. x .030 in. or .080 in.
x .050 in.)

6. Pin 2 allows use of an external resistor to ground for

optional, higher current. For 20 mA operation, no resistor is
used.

For IDD ~ 40 mA, R2 = 43 ohms;
IDD ~ 60 mA, R2 = 15 ohms;
IDD ~ 80 mA, R2 = 10 ohms.

Handling Procedures

Please observe the following precautions to avoid
damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged by
static electricity. Proper ESD control techniques
should be used when handling these devices.

Functional Schematic

OUT

(See Note 6)

1,4,5,8

High Dynamic Range Low Noise Amplifier
800 - 1000 MHz

AM50-0003

Recommended PCB Configuration

Layout View

The AM50-0003SMB Designer's Kit allows for immediate evaluation of M/A-COM's AM50-0003. The Designer's
Kit includes an evaluation board with mounted AM50-0003 and five loose AM50-0003's. The evaluation board
consists of the recommended external surface mount circuitry, RF connectors, and a DC multi-pin connector, all
mounted to a multi-layer FR-4 PCB. The AM50-0003SMB evaluation PCB is illustrated below with all functional
ports labeled.

Designer's Kit AM50-0003SMB

AM50-0003 Evaluation Board

Evaluation PCB & RF Connector Losses

Port Reference

Approximate RF Loss

LNA Input

0.1 dB @ 900 MHz

LNA Output

0.1 dB @ 900 MHz

The DC connector on the Designer's Kit PCB allows convenient
DC line access. This is accomplished by the one or more of the
following methods.
7.

A mating female multi-pin connector (newark Electronics
Stock # 46F-4658, not included).

Wires soldered to the necessary pins (not included).

Clip leads (not included).

Cross Section View

RF Traces & Components

RF Ground
DC Routing

Customer Defined

The PCB dielectric between RF traces and RF ground layers
should be chosen to reduce RF discontinuities between 50
lines and package pins. M/A-COM recommends an FR-4
dielectric thickness of 0.008" (0.20 mm) yielding a 50 line
width of 0.015" (0.38 mm). The recommended RFmetalization
thickness is 1 ounce copper.

High Dynamic Range Low Noise Amplifier
800 - 1000 MHz

AM50-0003

Typical Performance Curves

Test Conditions: T

= +25°C, Z

= 50 , V

= 5 V, I

= 60 mA unless otherwise specified

VSWR vs. Frequency

Gain vs. Frequency

Noise Figure vs. Frequency

Noise Figure vs. Current, F = 900 MHz

Output P1 dB vs. Frequency

Output P1 dB vs. Current, F = 900 MHz

0.5

0.7

0.9

1.1

3 Volts

5 Volts

8 Volts

Frequency (GHz)

0.5

0.7

0.9

1.1

INPUT

OUTPUT

Frequency (GHz)

1.1

1.2

1.3

1.4

0.8

0.85

0.9

0.95

Frequency (GHz)

Vdd = 3 to 8 Volts

1.1

1.2

1.3

1.4

IDD (mA)

Vdd = 3 to 8 Volts

0.8

0.85

0.9

0.95

3 VOLT

5 VOLT

6 VOLT

8 VOLT

Frequency (GHz)

3 VOLT

5 VOLT

6 VOLT

8 VOLT

IDD (mA)

High Dynamic Range Low Noise Amplifier
800 - 1000 MHz

AM50-0003

Input IP3 vs. Current, F = 900 MHz

Input IP3 vs. Frequency

0.8

0.85

0.9

0.95

3 VOLTS

5 VOLTS

6 VOLTS

8 VOLTS

Frequency (GHz)

3 VOLT

5 VOLT

6 VOLT

8 VOLT

IDD (mA)

SOIC-8

The AM50-0003 is fabricated using a low-cost 0.5-micron gate length GaAs process. The process features full passivation for increased
performance reliability. The AM50-0003 is 100% RF tested to ensure performance specification compliance.

Typical Performance Curves

Test Conditions: T

= +25°C, Z

= 50 , V

= 5 V, I

= 60 mA unless otherwise specified

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